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Didier Gourier

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Published work

2 published item(s)

preprint2015arXiv

Order and disorder around Cr$^{3+}$ in chromium doped persistent luminescence AB$_2$O$_4$ spinels

X-ray absorption near edge structure (XANES) spectroscopy technique is used to better understand the charging and decharging processes of the persistent luminescence in the Cr$^{3+}$ doped AB$_2$O$_4$ spinels (A = Zn, Mg and B = Ga and Al) with low photon energy excitation by visible light. Cr K edge XANES spectra have been simulated for different near neighbour environments around the Cr$^{3+}$ recombination centres and compared with the experimental curve. In Cr$^{3+}$:ZnGa$_2$O$_4$ compound, the Cr$^{3+}$ local structure corresponds mostly to that of a normal spinel ($\sim$70\%), while the rest comprises of distorted octahedral environment arising from cationic site inversion and a contribution from chromium clustering. This local structure is strongly different in Cr$^{3+}$:MgGa$_2$O$_4$ and Cr$^{3+}$:ZnAl$_2$O$_4$ where, for both cases, chromium clustering represents the main contribution. The strong correlation between the intensity of persistent luminescence and \% of Cr in clusters leads us to infer that presence of Cr clusters is responsible for decrease of the intensity of the visible light induced persistent luminescence in the Cr$^{3+}$ doped AB$_2$O$_4$ spinels.

preprint2014arXiv

The importance of inversion disorder in the visible light induced persistent luminescence in Cr$^{3+}$ doped AB$_2$O$_4$ (A = Zn or Mg and B = Ga or Al)

Cr$^{3+}$ doped spinel compounds AB$_2$O$_4$ with A=Zn, Mg and B=Ga, Al exhibit a long near infrared persistent luminescence when excited with UV or X-rays. In addition, persistent luminescence of ZnGa$_2$O$_4$ and to a lesser extent MgGa$_2$O$_4$, can also be induced by visible light excitation via $^4$A$_2$ $ \rightarrow $ $^4$T$_2$ transition of Cr$^{3+}$, which makes these compounds suitable as biomarkers for in vivo optical imaging of small animals. We correlate this peculiar optical property with the presence of antisite defects, which are present in ZnGa$_2$O$_4$ and MgGa$_2$O$_4$. By using X-ray absorption fine structure (XAFS) spectroscopy, associated with electron paramagnetic resonance (EPR) and optical emission spectroscopy, it is shown that an increase in antisite defects concentration results in a decrease in the Cr-O bond length and the octahedral crystal field energy. A part of the defects are in the close environment of Cr$^{3+}$ ions, as shown by the increasing strain broadening of EPR and XAFS peaks observed upon increasing antisite disorder. It appears that ZnAl$_2$O$_4$, which exhibits the largest crystal field splitting of Cr$^{3+}$ and the smallest antisite disorder, does not show considerable persistent luminescence upon visible light excitation as compared to ZnGa$_2$O$_4$ and MgGa$_2$O$_4$. These results highlight the importance of Cr$^{3+}$ ions with neighboring antisite defects in the mechanism of persistent luminescence exhibited by Cr$^{3+}$ doped AB$_2$O$_4$ spinel compounds.