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Nathaniel P. Stern

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Published work

4 published item(s)

preprint2020arXiv

Direct Visualization of Electric Field induced Structural Dynamics in Monolayer Transition Metal Dichalcogenides

Layered transition metal dichalcogenides (TMDs) offer many attractive features for next-generation low-dimensional device geometries. Due to the practical and fabrication challenges related to in situ methods, the atomistic dynamics that give rise to realizable macroscopic device properties are often unclear. In this study, in situ transmission electron microscopy techniques are utilized in order to understand the structural dynamics at play, especially at interfaces and defects, in the prototypical film of monolayer MoS2 under electrical bias. Through our sample fabrication process, we clearly identify the presence of mass transport in the presence of a lateral electric field. In particular, we observe that the voids present at grain boundaries combine to induce structural deformation. The electric field mediates a net vacancy flux from the grain boundary interior to the exposed surface edge sites that leaves molybdenum clusters in its wake. Following the initial biasing cycles, however, the mass flow is largely diminished, and the resultant structure remains stable over repeated biasing. We believe insights from this work can help explain observations of non-uniform heating and preferential oxidation at grain boundary sites in these materials.

preprint2015arXiv

Silicon-nitride photonic circuits interfaced with monolayer MoS$_2$

We report on the integration of monolayer molybdenum disulphide with silicon nitride microresonators assembled by visco-elastic layer transfer techniques. Evanescent coupling from the resonator mode to the monolayer is confirmed through measurements of cavity transmission. The absorption of the monolayer semiconductor flakes in this geometry is determined to be 850 dB/cm, which is larger than that of graphene and black phosphorus with the same thickness. This technique can be applied to diverse monolayer semiconductors for assembling hybrid optoelectronic devices such as photodetectors and modulators operating over a wide spectral range.

preprint2014arXiv

Coherent optical non-reciprocity in axisymmetric resonators

We describe an approach to optical non-reciprocity that exploits the local helicity of evanescent electric fields in axisymmetric resonators. By interfacing an optical cavity to helicity-sensitive transitions, such as Zeeman levels in a quantum dot, light transmission through a waveguide becomes direction-dependent when the state degeneracy is lifted. Using a linearized quantum master equation, we analyze the configurations that exhibit non-reciprocity, and we show that reasonable parameters from existing cavity QED experiments are sufficient to demonstrate a coherent non-reciprocal optical isolator operating at the level of a single photon.

preprint2014arXiv

Evaluation of defects in cuprous oxide through exciton luminescence imaging

The various decay mechanisms of excitons in cuprous oxide (Cu2O) are highly sensitive to defects which can relax selection rules. Here we report cryogenic hyperspectral imaging of exciton luminescence from cuprous oxide crystals grown via the floating zone method showing the samples have few defects. Some locations, however, show strain splitting of the 1s orthoexciton triplet polariton luminescence. Strain is reduced by annealing. In addition, annealing causes annihilation of oxygen and copper vacancies, which leads to a negative correlation between luminescence of unlike vacancies.