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Researcher profile

Narae Kang

Narae Kang contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

4 published item(s)

preprint2014arXiv

Electrical property tuning via defect engineering of single layer MoS2 by oxygen plasma

We demonstrate that the electrical property of a single layer molybdenum disulfide (MoS2) can be significantly tuned from semiconducting to insulating regime via controlled exposure to oxygen plasma. The mobility, on-current and resistance of single layer MoS2 devices were varied up to four orders of magnitude by controlling the plasma exposure time. Raman spectroscopy, X-ray photoelectron spectroscopy and density functional theory studies suggest that the significant variation of electronic properties is caused by the creation of insulating MoO3-rich disordered domains in the MoS2 sheet upon oxygen plasma exposure, leading to an exponential variation of resistance and mobility as a function of plasma exposure time. The resistance variation calculated using an effective medium model is in excellent agreement with the measurements. The simple approach described here can be used for the fabrication of tunable two dimensional nanodevices on MoS2 and other transition metal dichalcogenides.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Photoluminescence Quenching in Single-layer MoS2 via Oxygen Plasma Treatment

By creating defects via oxygen plasma treatment, we demonstrate optical properties variation of single-layer MoS2. We found that, with increasing plasma exposure time, the photoluminescence (PL) evolves from very high intensity to complete quenching, accompanied by gradual reduction and broadening of MoS2 Raman modes, indicative of distortion of the MoS2 lattice after oxygen bombardment. X-ray photoelectron spectroscopy study shows the appearance of Mo6+ peak, suggesting the creation of MoO3 disordered regions in the MoS2 flake. Finally, using band structure calculations, we demonstrate that the creation of MoO3 disordered domains upon exposure to oxygen plasma leads to a direct to indirect bandgap transition in single-layer MoS2, which explains the observed PL quenching.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

High Performance Semiconducting Enriched Carbon Nanotube Thin Film Transistors Using Metallic Carbon Nanotube Electrode

High-performance solution-processed short-channel carbon nanotube (CNT) thin film transistors (TFTs) are fabricated using densely aligned arrays of metallic CNTs (m-CNTs) as source and drain electrodes, and aligned arrays of semiconducting enriched CNTs (s-CNTs) as channel material. The electrical transport measurements at room temperature show that the m-CNT contacted s-CNT array devices with a 2 um channel length perform superiorly to those of control Pd contacted s-CNT devices. The m-CNT contacted devices exhibit a maximum (average) on-conductance of 36.5 uS (19.2 uS), transconductance of 2.6 uS (1.2 uS), mobility of 51 cm2/Vs (25 cm2/Vs), and current on-off ratio of 1.1x10E6 (2.5x10E5). These values are almost an order of magnitude higher than that of control Pd contacted devices with the same channel length and s-CNT linear density. The low temperature charge transport measurements suggest that these improved performances are due to the lower charge injection barrier of m-CNT/s-CNT array devices compared to Pd/s-CNT array devices. We attribute the lower injection barrier to unique geometry of our devices. In addition to using semiconducting enriched CNT, our results suggest that using metallic CNT as an electrode can significantly enhance the performance of CNT TFTs.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

The Effect of Carbon Nanotube/Organic Semiconductor Interfacial Area on the Performance of Organic Transistors

We show that the performance of pentacene transistors can be significantly improved by maximizing the interfacial area at single walled carbon nanotube (SWCNT)/pentacene. The interfacial areas are varied by anchoring short SWCNTs of different densities (0-30/μm) to the Pd electrodes. The average mobility is increased three, six and nine times for low, medium and high SWCNT densities, respectively, compared to the devices with zero SWCNT. The current on-off ratio and on-current are increased up to 40 times and 20 times with increasing the SWCNT density. We explain the improved device performance using reduced barrier height of SWCNT/pentacene interface.

0 citations0 reviewsNo code linkedOpen access