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Researcher profile

Nan M. Jokerst

Nan M. Jokerst contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
physics.optics

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2 published item(s)

preprint2012arXiv

Characterization of Surface Electromagnetic Waves and Scattering on Infrared Metamaterial Absorbers

We report, for the first time, a full experimental and computational investigation of all possible light matter interactions on the surface of an infrared metamaterial absorber (MMA). Two channels of energy dissipation - diffuse scattering and generation of surface electromagnetic waves - are quantified in terms of their impact on specular absorption. The diffuse scattering is found to play a negligible roll in the absorption process, at least for wavelengths greater than the periodicity of unit cell. In contrast, surface electromagnetic waves are found to be generated for transverse magnetic (TM) polarized light at the operational wavelength of the MMA, i.e. λ_0, and shorter wavelengths. Our computational results indicate that the highly lossy surface electromagnetic wave generated at λ_0 is responsible for the good angular dependence of absorption in TM polarization. Experimental results are supported by full wave three dimensional electromagnetic and eigenmode simulations.

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preprint2012arXiv

Electronically reconfigurable metal-on-silicon metamaterial

Reconfigurable metamaterial-based apertures can play a unique role in both imaging and in beam-forming applications, where current technology relies mostly on the fabrication and integration of large detector or antenna arrays. Here, we report the experimental demonstration of a voltage-controlled, silicon-based electromagnetic metamaterial operating in the W-band (75-110 GHz). In this composite semiconductor metamaterial, patterned gold metamaterial elements serve both to manage electromagnetic wave propagation while simultaneously acting as electrical Schottky contacts that control the local conductivity of the semiconductor substrate. The active device layers consist of a patterned metal on a 2-μm-thick n-doped silicon layer, adhesively bonded to a transparent Pyrex wafer. The transmittance of the composite metamaterial can be modulated over a given frequency band as a function of bias voltage. We demonstrate a quantitative understanding of the composite device through the application of numerical approaches that simultaneously treat the semiconductor junction physics as well as wave propagation.

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