Researcher profile

Nam Hoon Lee

Nam Hoon Lee contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2012arXiv

Pressure effects on the superconducting thin film Ba$_{1-x}$K$_{x}$Fe$_{2}$As$_{2}$

We report electrical resistivity measurements on a high-quality Ba$_{1-x}$K$_{x}$Fe$_{2}$As$_{2}$ thin film ($x=0.4$) under pressure. The superconducting transition temperature (=39.95 K) of the optimally-doped thin film shows a dome shape with pressure, reaching a maximal value 40.8 K at 11.8 kbar. The unusually high superconducting transition temperature and its anomalous pressure dependence are ascribed to a lattice mismatch between the LaAlO$_3$ substrate and the thin film. The local temperature exponent of the resistivity ($n=d\text{ln}Δρ/d\text{ln}T$) shows a funnel shape around the optimal pressure, suggesting that fluctuations associated with the anomalous normal state are responsible for high-temperature superconductivity.

preprint2010arXiv

Fabrication of FeSe1-x superconducting films with bulk properties

We have fabricated high-quality FeSe1-x superconducting films with a bulk Tc of 11-12 K on different substrates, Al2O3(0001), SrTiO3(100), MgO(100), and LaAlO3(100), by using a pulsed laser deposition technique. All the films were grown at a high substrate temperature of 610 oC, and were preferentially oriented along the (101) direction, the latter being to be a key to fabricating of FeSe1-x superconducting thin films with high Tc. According to the energy dispersive spectroscopy data, the Fe:Se composition ratio was 1:0.90+-0.02. The FeSe1-x film grown on a SrTiO3 substrate showed the best quality with a high upper critical magnetic field [Hc2(0)] of 56 T.

preprint2010arXiv

Potassium-doped BaFe2As2 superconducting thin films with a transition temperature of 40 K

We report the growth of potassium-doped BaFe2As2 thin films, where the major charge carriers are holes, on Al2O3 (0001) and LaAlO3 (001) substrates by using an ex-situ pulsed laser deposition technique. The measured Tc's are 40 and 39 K for the films grown on Al2O3 and LaAlO3, respectively and diamagnetism indicates that the films have good bulk superconducting properties below 36 and 30 K, respectively. The X-ray diffraction patterns for both films indicated a preferred c-axis orientation, regardless of the substrate structures of LaAlO3 and Al2O3. The upper critical field at zero temperature was estimated to be about 155 T.

preprint2009arXiv

In-situ fabrication of cobalt-doped SrFe2As2 thin films by using pulsed laser deposition with excimer laser

The remarkably high superconducting transition temperature and upper critical field of iron(Fe)-based layered superconductors, despite ferromagnetic material base, open the prospect for superconducting electronics. However, success in superconducting electronics has been limited because of difficulties in fabricating high-quality thin films. We report the growth of high-quality c-axis-oriented cobalt(Co)-doped SrFe2As2 thin films with bulk superconductivity by using an in-situ pulsed laser deposition technique with a 248-nm-wavelength KrF excimer laser and an arsenic(As)-rich phase target. The temperature and field dependences of the magnetization showing strong diamagnetism and transport critical current density with superior Jc-H performance are reported. These results provide necessary information for practical applications of Fe-based superconductors.