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Najeb Abdul-Jabbar

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cond-mat.mtrl-sci

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preprint2015arXiv

Effect of stoichiometric vacancies on the structure and properties of the Ga2SeTe2 compound semiconductor

Ga2SeTe2 belongs to a family of materials with large intrinsic vacancy concentrations that are being actively studied due to their potential for diverse applications that include thermoelectrics and phase-change memory. In this article, the Ga2SeTe2 structure is investigated via synchrotron x-ray diffraction, electron microscopy, and x-ray absorption experiments. Diffraction and microscopy measurements showed that the extent of vacancy ordering in Ga2SeTe2 is highly dependent on thermal annealing. It is posited that stoichiometric vacancies play a role in local atomic distortions in Ga2SeTe2 (based on the fine structure signals in the collected x-ray absorption spectra). The effect of vacancy ordering on Ga2SeTe2 material properties is also examined through band gap and Hall effect measurements, which reveal that the Ga2SeTe2 band gap redshifts by ~0.05 eV as the vacancies order and accompanied by gains in charge carrier mobility. The results serve as an encouraging example of altering material properties via intrinsic structural rearrangement as opposed to extrinsic means such as doping.

preprint2014arXiv

The role of stoichiometric vacancy periodicity in pressure-induced amorphization of the Ga2SeTe2 semiconductor alloy

We observe that pressure-induced amorphization of Ga2SeTe2 (a III-VI semiconductor) is directly influenced by the periodicity of its intrinsic defect structures. Specimens with periodic and semi-periodic two-dimensional vacancy structures become amorphous around 10-11 GPa in contrast to those with aperiodic structures, which amorphize around 7-8 GPa. The result is a notable instance of altering material phase-change properties via rearrangement of stoichiometric vacancies as opposed to adjusting their concentrations. Based on our experimental findings, we posit that periodic two-dimensional vacancy structures in Ga2SeTe2 provide an energetically preferred crystal lattice that is less prone to collapse under applied pressure. This is corroborated through first-principles electronic structure calculations, which demonstrate that the energy stability of III-VI structures under hydrostatic pressure is highly dependent on the configuration of intrinsic vacancies.

preprint2013arXiv

Probing the local environment of two-dimensional ordered vacancy structures in Ga2SeTe2 via aberration-corrected electron microscopy

There has been considerable interest in chalcogenide alloys with high concentrations of native vacancies that lead to properties desirable for thermoelectric and phase-change materials. Recently, vacancy ordering has been identified as the mechanism for metal-insulator transitions observed in GeSb2Te4 and an unexpectedly low thermal conductivity in Ga2Te3. Here, we report the direct observation of vacancy ordering in Ga2SeTe2 utilizing aberration-corrected electron microscopy. Images reveal a cation-anion dumbbell inversion associated with the accommodation of vacancy ordering across the entire crystal. The result is a striking example of the interplay between native defects and local structure.