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N. T. Son

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cond-mat.mes-hall cond-mat.mtrl-sci physics.app-ph physics.optics quant-ph

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preprint2022arXiv

Photoluminescence lineshapes and charge state control of divacancy qubits in silicon carbide

Divacancy in its neutral charge state (V $_\text{C}$ V $_\text{Si}^0$ ) in 4H silicon carbide (SiC) is a leading quantum bit (qubit) contender. Owing to the lattice structure of 4H SiC four different V $_\text{C}$ V $_\text{Si}$ configurations can be formed. Ground and optical excited states of V $_\text{C}$ V $_\text{Si}^0$ exhibit $S$ =1 spintriplet state and the corresponding transition energies are around $\approx 1.1$ ~eV falling in the near-infrared wavelength region. Recently, photoluminescence (PL) quenching has been experimentally observed for all V $_\text{C}$ V $_\text{Si}$ configurations in 4H SiC, i.e. the corresponding zero-phonon lines (ZPLs) appear only at higher-than-ZPL photoexcitation energies (threshold energies). It has been shown that V $_\text{C}$ V $_\text{Si}^0$ is converted to V $_\text{C}$ V $_\text{Si}^-$ upon photoexcitation below the correspoding excitation threshold energies at cryogenic temperature, i.e. V $_\text{C}$ V $_\text{Si}^-$ is the so-called dark state. In this study we demonstrate that the threshold energy for reinozation is temperature dependent. We further carry out density functional theory (DFT) calculations in order to investigate the temperature dependent reionization spectrum, i.e. the spectrum of the V $_\text{C}$ V $_\text{Si}^- \rightarrow$ V $_\text{C}$ V $_\text{Si}^0$ process and found that simultaneous reionization and qubit manipulation can be carried out at around room temperature ( $\approx$ 300~K) by using the usually applied excitation wavelength. We also investigate the PL lineshape of V $_\text{C}$ V $_\text{Si}^0$ by using the Huang-Rhys theory.

preprint2020arXiv

Quantum well stabilized point defect spin qubits

Defect-based quantum systems in in wide bandgap semiconductors are strong candidates for scalable quantum-information technologies. However, these systems are often complicated by charge-state instabilities and interference by phonons, which can diminish spin-initialization fidelities and limit room-temperature operation. Here, we identify a pathway around these drawbacks by showing that an engineered quantum well can stabilize the charge state of a qubit. Using density-functional theory and experimental synchrotron x-ray diffraction studies, we construct a model for previously unattributed point defect centers in silicon carbide (SiC) as a near-stacking fault axial divacancy and show how this model explains these defect's robustness against photoionization and room temperature stability. These results provide a materials-based solution to the optical instability of color centers in semiconductors, paving the way for the development of robust single-photon sources and spin qubits.

preprint2019arXiv

Spin-relaxation times exceeding seconds for color centers with strong spin-orbit coupling in SiC

Spin-active color centers in solids show good performance for quantum technologies. Several transition-metal defects in SiC offer compatibility with telecom and semiconductor industries. However, whether their strong spin-orbit coupling degrades their spin lifetimes is not clear. We show that a combination of a crystal-field with axial symmetry and spin-orbit coupling leads to a suppression of spin-lattice and spin-spin interactions, resulting in remarkably slow spin relaxation. Our optical measurements on an ensemble of Mo impurities in SiC show a spin lifetime $T_1$ of $2,4$ s at $2$ K.

preprint2014arXiv

Characterization of the nitrogen split interstitial defect in wurtzite aluminum nitride using density functional theory

We carried out Heyd-Scuseria-Ernzerhof hybrid density functional theory plane wave supercell calculations in wurtzite aluminum nitride in order to characterize the geometry, formation energies, transition levels and hyperfine tensors of the nitrogen split interstitial defect. The calculated hyperfine tensors may provide useful fingerprint of this defect for electron paramagnetic resonance measurement.

preprint2006arXiv

Clustering of vacancy defects in high-purity semi-insulating SiC

Positron lifetime spectroscopy was used to study native vacancy defects in semi-insulating silicon carbide. The material is shown to contain (i) vacancy clusters consisting of 4--5 missing atoms and (ii) Si vacancy related negatively charged defects. The total open volume bound to the clusters anticorrelates with the electrical resistivity both in as-grown and annealed material. Our results suggest that Si vacancy related complexes compensate electrically the as-grown material, but migrate to increase the size of the clusters during annealing, leading to loss of resistivity.

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