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N. Peter Armitage

N. Peter Armitage appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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Published work

3 published item(s)

preprint2020arXiv

THz range Faraday rotation in the Weyl Semimetal Candidate $\mathrm{Co_2TiGe}$

The $\mathrm{Co_2}$ family of ferromagnetic Heusler alloys have attracted interest due to their fully spin-polarized nature, making them ideal for applications in spintronic devices. More recently, the existence of room temperature time-reversal-breaking Weyl nodes near the Fermi level was predicted and confirmed in these systems. As a result of the presence of these Weyl nodes, these systems possess a non-zero momentum space Berry curvature that can dramatically influence transport properties such as the anomalous Hall effect. One of these candidate compounds is $\mathrm{Co_2 Ti Ge}$. Recently, high quality molecular beam epitaxy-grown thin films of $\mathrm{Co_2 Ti Ge}$ have become available. In this work, we present THz-range measurement of MBE-grown $\mathrm{Co_2 Ti Ge}$ films. We measure the THz-range Faraday rotation, which can be understood as a measure of the anomalous Hall effect. We supplement this work with electronic band structure calculations showing that the principal contribution to the anomalous Hall effect in the this material stems from the Berry curvature of the material. Our work shows that this class of Heusler materials shows promise for Weyl semimetal based spintronics.

preprint2015arXiv

Record Surface State Mobility and Quantum Hall Effect in Topological Insulator Thin Films via Interface Engineering

Material defects remain as the main bottleneck to the progress of topological insulators (TIs). In particular, efforts to achieve thin TI samples with dominant surface transport have always led to increased defects and degraded mobilities, thus making it difficult to probe the quantum regime of the topological surface states. Here, by utilizing a novel buffer layer scheme composed of an In2Se3/(Bi0.5In0.5)2Se3 heterostructure, we introduce a quantum generation of Bi2Se3 films with an order of magnitude enhanced mobilities than before. This scheme has led to the first observation of the quantum Hall effect in Bi2Se3.

preprint2011arXiv

Magnetic field-induced novel insulating phase in 2D superconductors

DC and finite frequency transport measurements of thin films of amorphous indium oxide that were driven through the critical point of superconductor-insulator transition by the application of perpendicular magnetic field are presented. The observation of non-monotonic dependence of resistance on magnetic field in the insulating phase, novel transport characteristics near the resistance peak and finite superfluid stiffness in the insulating phase are all discussed from the point of view that suggests a possible relation between the conduction mechanisms in the superconducting and insulating phases. The results are summarized in the form of an experimental phase diagram for disordered superconductors in the disorder-magnetic field plane.