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N. N. Sibeldin

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Published work

3 published item(s)

preprint2016arXiv

Dynamics of spatial coherence and momentum distribution of polaritons in a semiconductor microcavity under conditions of Bose-Einstein condensation

The dynamics of spatial coherence and momentum distribution of polaritons in the regime of Bose-Einstein condensation are investigated in a GaAs microcavity with embedded quantum wells under nonresonant excitation with picosecond laser pulses. It is shown that the onset of the condensate first order sparial coherence is accompanied by narrowing of the polariton momentum distribution. At the same time, at sufficiently high excitation densities, there is significant qualitative discrepancy between the dynamic behavior of the width of the polariton momentum distribution determined from direct measurements and that calculated from the coherence spatial distribution. This discrepancy is observed at the fast initial stage of the polariton system kinetics and, apparently, results from the strong spatial nonuniformity of the phase of the condensate wave function, which equilibrates on a much longer time scale.

preprint2013arXiv

Coherence expansion and polariton condensate formation in a semiconductor microcavity

The dynamics of the expansion of the first order spatial coherence g(1) for a polariton system in a high-Q GaAs microcavity was investigated on the basis of Young's double slit experiment under 3 ps pulse excitation at the conditions of polariton Bose-Einstein condensation. It was found that in the process of condensate formation the coherence expands with a constant velocity of about 10^8 cm/s. The measured coherence is smaller than that in thermally equilibrium system during the growth of condensate density and well exceeds it at the end of condensate decay. The onset of spatial coherence is governed by polariton relaxation while condensate amplitude and phase fluctuations are not suppressed.

preprint2011arXiv

Nonlinear emission dynamics of a GaAs microcavity with embedded quantum wells

The emission dynamics of a GaAs microcavity at different angles of observation with respect to the sample normal under conditions of nonresonant picosecond-pulse excitation is measured. At sufficiently high excitation densities, the decay time of the lower-polariton emission increases with the polariton wavevector; at low excitation densities the decay time is independent of the wavevector. The effect of additional nonresonant continuous illumination on the emission originating from the bottom of the lower polariton branch is investigated. The additional illumination leads to a substantial increase in the emission intensity (considerably larger than the intensity of the photoluminescence excited by this illumination alone). This fact is explained in terms of acceleration of the polariton relaxation to the radiative states due to scattering by charge carriers created by the additional illumination. The results obtained show, that at large negative detunings between the photon and exciton modes, polariton-polariton and polariton-free carrier scattering are the main processes responsible for the filling of states near the bottom of the lower polariton branch.