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Researcher profile

V. V. Belykh

V. V. Belykh contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.othercond-mat.quant-gascond-mat.mtrl-scicond-mat.stat-mechquant-ph

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Published work

8 published item(s)

preprint2022arXiv

Selective measurement of the longitudinal electron spin relaxation time $T_1$ of Ce$^{3+}$ ions in a YAG lattice: Resonant spin inertia

Electron spin oriented along an external magnetic field is subject to longitudinal spin relaxation with characteristic time $T_1$. The corresponding decay is nonoscillating, so one cannot readily ascribe $T_1$ to a certain $g$ factor. This becomes a problem when several electronic states with different $g$ factors are present in the system, e.g. electrons and holes. We solve this problem by optically pumping spin polarization and then selectively depolarizing it using a radio frequency (rf) field. By modulating the rf field one can observe the retarded modulation of spin polarization which depends on the relation between the modulation period and $T_1$. Using this selective spin inertia method, we unveil the strong anisotropy of $T_1$ for rare-earth Ce$^{3+}$ ions in a YAG crystal at low temperatures and low magnetic fields. We also show that the spread of Larmor frequencies within the electron ensemble in this system is not static, but results from the fluctuations of internal magnetic fields on a timescale much shorter than $T_1$.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Anomalous magnetic suppression of spin relaxation in a two-dimensional electron gas in a GaAs/AlGaAs quantum well

We study the spin dynamics in a high-mobility two-dimensional electron gas confined in a GaAs/AlGaAs quantum well. An unusual magnetic field dependence of the spin relaxation is found: as the magnetic field becomes stronger, the spin relaxation time first increases quadratically but then changes to a linear dependence, before it eventually becomes oscillatory, whereby the longitudinal and transverse times reach maximal values at even and odd filling Landau level factors, respectively. We show that the suppression of spin relaxation is due to the effect of electron gyration on the spin-orbit field, while the oscillations correspond to oscillations of the density of states appearing at low temperatures and high magnetic fields. The transition from quadratic to linear dependence can be related to a transition from classical to Bohm diffusion and reflects an anomalous behavior of the two-dimensional electron gas analogous to that observed in magnetized plasmas.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Nonexponential photoluminescence dynamics in an inhomogeneous ensemble of excitons in WSe$_2$ monolayers

The spectral and spatiotemporal dynamics of photoluminescence in monolayers of transition metal dichalcogenide WSe$_2$ obtained by mechanical exfoliation on a Si/SiO$_2$ substrate is studied over a wide range of temperatures and excitation powers. It is shown that the dynamics is nonexponential and, for times $t$ exceeding $\sim$50 ps after the excitation pulse, is described by a dependence of the form $1/(t+t_0)$. Photoluminescence decay is accelerated with a decrease in temperature, as well as with a decrease in the energy of emitting states. It is shown that the observed dynamics cannot be described by a bimolecular recombination process, such as exciton--exciton annihilation. A model that describes the nonexponential photoluminescence dynamics by taking into account the spread of radiative recombination times of localized exciton states in a random potential gives good agreement with experimental data.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Optical detection of electron spin dynamics driven by fast variations of a magnetic field: a simple method to measure $T_1$, $T_2$, and $T_2^*$ in semiconductors

We develop a simple method for measuring the electron spin relaxation times $T_1$, $T_2$ and $T_2^*$ in semiconductors and demonstrate its exemplary application to $n$-type GaAs. Using an abrupt variation of the magnetic field acting on electron spins, we detect the spin evolution by measuring the Faraday rotation of a short laser pulse. Depending on the magnetic field orientation, this allows us to measure either the longitudinal spin relaxation time $T_1$ or the inhomogeneous transverse spin dephasing time $T_2^*$. In order to determine the homogeneous spin coherence time $T_2$, we apply a pulse of an oscillating radiofrequency (rf) field resonant with the Larmor frequency and detect the subsequent decay of the spin precession. The amplitude of the rf-driven spin precession is significantly enhanced upon additional optical pumping along the magnetic field.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Resonant spin amplification meets electron spin resonance in $n$-GaAs

Periodic excitation of electron spin polarization by consecutive laser pulses in phase with Larmor spin precession about a magnetic field results in resonant spin amplification (RSA). We observe a drastic modification of RSA in $n$-doped bulk GaAs under the influence of external oscillating magnetic field. We find a double-peaked electron spin resonance instead of a single-peaked resonance expected without optical pumping. The frequency splitting increases linearly with amplitude of field oscillations, while the spin deviation increases quadratically. Moreover, we show that the oscillating field can both significantly suppress RSA and induce new conditions for resonance. Using quaternions to describe spin rotations, we develop a theory that simultaneously considers spin precession, decay, and amplification and reproduces the entire set of the experimental data. Using the radio-frequency field allows one to control the conditions of RSA and achieve fine tuning of average spin polarization without modifying the parameters of optical pumping.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Polariton linewidth and the reservoir temperature dynamics in a semiconductor microcavity

A method of determining the temperature of the nonradiative reservoir in a microcavity exciton-polariton system is developed. A general relation for the homogeneous polariton linewidth is theoretically derived and experimentally used in the method. In experiments with a GaAs microcavity under nonresonant pulsed excitation, the reservoir temperature dynamics is extracted from the polariton linewidth. Within the first nanosecond the reservoir temperature greatly exceeds the lattice temperature and determines the dynamics of the major processes in the system. It is shown that, for nonresonant pulsed excitation of GaAs microcavities, the polariton Bose-Einstein condensation is typically governed by polariton-phonon scattering, while interparticle scattering leads to condensate depopulation.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Coherence expansion and polariton condensate formation in a semiconductor microcavity

The dynamics of the expansion of the first order spatial coherence g(1) for a polariton system in a high-Q GaAs microcavity was investigated on the basis of Young's double slit experiment under 3 ps pulse excitation at the conditions of polariton Bose-Einstein condensation. It was found that in the process of condensate formation the coherence expands with a constant velocity of about 10^8 cm/s. The measured coherence is smaller than that in thermally equilibrium system during the growth of condensate density and well exceeds it at the end of condensate decay. The onset of spatial coherence is governed by polariton relaxation while condensate amplitude and phase fluctuations are not suppressed.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Nonlinear emission dynamics of a GaAs microcavity with embedded quantum wells

The emission dynamics of a GaAs microcavity at different angles of observation with respect to the sample normal under conditions of nonresonant picosecond-pulse excitation is measured. At sufficiently high excitation densities, the decay time of the lower-polariton emission increases with the polariton wavevector; at low excitation densities the decay time is independent of the wavevector. The effect of additional nonresonant continuous illumination on the emission originating from the bottom of the lower polariton branch is investigated. The additional illumination leads to a substantial increase in the emission intensity (considerably larger than the intensity of the photoluminescence excited by this illumination alone). This fact is explained in terms of acceleration of the polariton relaxation to the radiative states due to scattering by charge carriers created by the additional illumination. The results obtained show, that at large negative detunings between the photon and exciton modes, polariton-polariton and polariton-free carrier scattering are the main processes responsible for the filling of states near the bottom of the lower polariton branch.

0 citations0 reviewsNo code linkedOpen access