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N. Mishra

N. Mishra contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2022arXiv

A novel active veto prototype detector with an inner target for improved rare event searches

We report the fabrication and performance of an annular, cryogenic, phonon-mediated veto detector that can host an inner target detector, allowing substantial reduction in radiogenic backgrounds for rare event search experiments. A germanium veto detector of mass $\sim$500 g with an outer diameter of 76 mm and an inner diameter of 28 mm was produced. A 25 mm diameter germanium inner target detector of mass $\sim$10 g was mounted inside the veto detector. The detector was designed using inputs from a GEANT4 based simulation, where it was modeled to be sandwiched between two germanium detectors. The simulation showed that the background rates (dominantly gamma interactions) could be reduced by $>$ 90$\%$, and that such an arrangement is sufficient for aggressive background reduction needed for neutrino and dark matter search experiments. During testing at the experimental site the veto detector prototype achieved a baseline resolution of 1.24 $\pm$ 0.02 keV while hosting a functional inner target detector. The baseline resolution of the inner target detector was 147 $\pm$ 2 eV. The detectors were operated at mK temperatures. The experimental results of an identical detector arrangement are in excellent agreement with the simulation.

preprint2020arXiv

2D MoSe2 as a Promising Chemo-resistive Sensor for N2O Detection: A DFT Approach

We have investigated the impact of toxic N2O gas upon structural and electronic properties of 2D MoSe2 monolayer using DFT approach. In this work, as a result of N2O gas absorption, charge transfer, band gap and density of states (DOS) are changed and these parameters are extracted as electronic properties of 2D MoSe2 monolayer nano-gas sensor. Moreover, the band gap is tunable upon the N2O gas absorption for pristine and adsorbed MoSe2 in both Top Mo (Top Se) structures. Also, the spin up and down states in the DOS results considerable magnetic moment altering the magnetic property of the 2D MoSe2 monolayer. Later, the desorption property of the 2D MoSe2 monolayer towards the target N2O gas molecule at three different temperature are calculated. Thus, the paper concludes with outcomes of the structural and electronic properties aligning its behavior as a chemo-resistive nano-gas sensor and showing it as a potential applicant for sensing of toxic N2O gas molecule. The nature of toxic N2O gas molecule is not explored till date using 2D monolayer, thus, in this work it is estimated through simulated results and the experimental verification is awaited.

preprint2020arXiv

Graphene promotes axon elongation through local stall of Nerve Growth Factor signaling endosomes

Several works reported increased differentiation of neuronal cells grown on graphene; however, the molecular mechanism driving axon elongation on this material has remained elusive. Here, we study the axonal transport of nerve growth factor (NGF), the neurotrophin supporting development of peripheral neurons, as a key player in the time course of axonal elongation of dorsal root ganglion neurons on graphene. We find that graphene drastically reduces the number of retrogradely transported NGF vesicles in favor of a stalled population in the first two days of culture, in which the boost of axon elongation is observed. This correlates with a mutual charge redistribution, observed via Raman spectroscopy and electrophysiological recordings. Furthermore, ultrastructural analysis indicates a reduced microtubule distance and an elongated axonal topology. Thus, both electrophysiological and structural effects can account for graphene action on neuron development. Unraveling the molecular players underneath this interplay may open new avenues for axon regeneration applications.

preprint2019arXiv

Going beyond copper: wafer-scale synthesis of graphene on sapphire

The adoption of graphene in electronics, optoelectronics and photonics is hindered by the difficulty in obtaining high quality material on technologically-relevant substrates, over wafer-scale sizes and with metal contamination levels compatible with industrial requirements. To date, the direct growth of graphene on insulating substrates has proved to be challenging, usually requiring metal-catalysts or yielding defective graphene. In this work, we demonstrate a metal-free approach implemented in commercially available reactors to obtain high-quality monolayer graphene on c-plane sapphire substrates via chemical vapour deposition (CVD). We identify via low energy electron diffraction (LEED), low energy electron microscopy (LEEM) and scanning tunneling microscopy (STM) measurements the Al-rich reconstruction root31R9 of sapphire to be crucial for obtaining epitaxial graphene. Raman spectroscopy and electrical transport measurements reveal high-quality graphene with mobilities consistently above 2000 cm2/Vs. We scale up the process to 4-inch and 6-inch wafer sizes and demonstrate that metal contamination levels are within the limits for back-end-of-line (BEOL) integration. The growth process introduced here establishes a method for the synthesis of wafer-scale graphene films on a technologically viable basis.