Source author record

N. Lietaer

N. Lietaer appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

Catalog footprint

What is connected

2works
2topics
4close collaborators

Actions

Connect this record

Log in to claim

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

2 published item(s)

preprint2011arXiv

Test Beam Results of 3D Silicon Pixel Sensors for the ATLAS upgrade

Results on beam tests of 3D silicon pixel sensors aimed at the ATLAS Insertable-B-Layer and High Luminosity LHC (HL-LHC)) upgrades are presented. Measurements include charge collection, tracking efficiency and charge sharing between pixel cells, as a function of track incident angle, and were performed with and without a 1.6 T magnetic field oriented as the ATLAS Inner Detector solenoid field. Sensors were bump bonded to the front-end chip currently used in the ATLAS pixel detector. Full 3D sensors, with electrodes penetrating through the entire wafer thickness and active edge, and double-sided 3D sensors with partially overlapping bias and read-out electrodes were tested and showed comparable performance.

preprint2011arXiv

The SiRi Particle-Telescope System

A silicon particle-telescope system for light-ion nuclear reactions is described. In particular, the system is designed to be optimized for level density and gamma-ray strength function measurements with the so-called Oslo method. Eight trapezoidal modules are mounted at 5 cm distance from the target, covering 8 forward angles between theta = 40 and 54 degrees. The thin front dE detectors (130 micrometer) are segmented into eight pads, determining the reaction angle for the outgoing charged ejectile. Guard rings on the thick back E detectors (1550 micrometer) guarantee low leakage current at high depletion voltage.