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N. Kinsey

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physics.optics

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preprint2016arXiv

Enhanced nonlinear refractive index in epsilon-near-zero materials

New propagation regimes for light arise from the ability to tune the dielectric permittivity to extremely low values. Here we demonstrate a universal approach based on the low linear permittivity values attained in the epsilon-near-zero (ENZ) regime for enhancing the nonlinear refractive index, which enables remarkable light-induced changes of the material properties. Experiments performed on Al-doped ZnO (AZO) thin films show a six-fold increase of the Kerr nonlinear refractive index ($n_2$) at the ENZ wavelength, located in the 1300 nm region. This in turn leads to ultrafast light-induced refractive index changes of the order of unity, thus representing a new paradigm for nonlinear optics.

preprint2015arXiv

Epsilon-Near-Zero Al-Doped ZnO for Ultrafast Switching at Telecom Wavelengths: Outpacing the Traditional Amplitude-Bandwidth Trade-Off

Transparent conducting oxides have recently gained great attention as CMOS-compatible materials for applications in nanophotonics due to their low optical loss, metal-like behavior, versatile/tailorable optical properties, and established fabrication procedures. In particular, aluminum doped zinc oxide (AZO) is very attractive because its dielectric permittivity can be engineered over a broad range in the near infrared and infrared. However, despite all these beneficial features, the slow (> 100 ps) electron-hole recombination time typical of these compounds still represents a fundamental limitation impeding ultrafast optical modulation. Here we report the first epsilon-near-zero AZO thin films which simultaneously exhibit ultra-fast carrier dynamics (excitation and recombination time below 1 ps) and an outstanding reflectance modulation up to 40% for very low pump fluence levels (< 4 mJ/cm2) at the telecom wavelength of 1.3 μm. The unique properties of the demonstrated AZO thin films are the result of a low temperature fabrication procedure promoting oxygen vacancies and an ultra-high carrier concentration. As a proof-of-concept, an all-optical AZO-based plasmonic modulator achieving 3 dB modulation in 7.5 μm and operating at THz frequencies is numerically demonstrated. Our results overcome the traditional "modulation depth vs. speed" trade-off by at least an order of magnitude, placing AZO among the most promising compounds for tunable/switchable nanophotonics.