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N. K. Desai

N. K. Desai appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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Emerging Technologiescond-mat.mtrl-sci

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Published work

2 published item(s)

preprint2016arXiv

Investigating Reliability Aspects of Memristor based RRAM with Reference to Write Voltage and Frequency

In this paper, we report the effect of write voltage and frequency on memristor based Resistive Random Access Memory (RRAM). The above said parameters have been investigated on the linear drift model of memristor. With a variation of write voltage from 0.2V to 1.2V and a subsequent frequency modulation from 1, 2, 4, 10, 100 and 200 Hz the corresponding effects on memory window, Low Resistance State (LRS) and High Resistance State (HRS) have been reported. Thus the lifetime (τ) reliability analysis of memristor based RRAM is carried out using above results. It is found that, the HRS is independent of write voltage, whereas LRS shows dependency on write voltage and frequency. The simulation results showcase that the memristor possess higher memory window and lifetime (τ) in the higher voltage with lower frequency region, which has been attributed to the fewer data losses in the memory architecture.

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preprint2016arXiv

TiO2 based Nanostructured Memristor for RRAM and Neuromorphic Applications: A Simulation Approach

We report simulation of nanostructured memristor device using piecewise linear and nonlinear window functions for RRAM and neuromorphic applications. The linear drift model of memristor has been exploited for the simulation purpose with the linear and non-linear window function as the mathematical and scripting basis. The results evidences that the piecewise linear window function can aptly simulate the memristor characteristics pertaining to RRAM application. However, the nonlinear window function could exhibit the nonlinear phenomenon in simulation only at the lower magnitude of control parameter. This has motivated us to propose a new nonlinear window function for emulating the simulation model of the memristor. Interestingly, the proposed window function is scalable up to f(x)=1 and exhibits the nonlinear behavior at higher magnitude of control parameter. Moreover, the simulation results of proposed nonlinear window function are encouraging and reveals the smooth nonlinear change from LRS to HRS and vice versa and therefore useful for the neuromorphic applications.

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