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Source author record

N. I. Polushkin

N. I. Polushkin appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hall

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Published work

2 published item(s)

preprint2016arXiv

Argon assisted chemical vapor deposition of CrO$_2$: an efficient process leading to high quality epitaxial films

A comparative study of the structural, microstructural and magnetic properties of CrO$_2$ thin films grown onto (110) and (100) TiO$_2$ rutile single crystal substrates by chemical vapor deposition (CVD), using CrO$_3$ as chromium precursor and either oxygen or argon as carrier gas is presented. Our results show that growth under argon carrier gas leads to high quality CrO$_2$ epilayers with structural and magnetic properties similar to those obtained using the more standard oxygen carrier gas. Furthermore, we interpret the larger magnetic coercivity observed for the (110) oriented films in terms of their microstructure, in particular of the highest strain and edge roughness of the building structures of the CrO$_2$ epilayers, which are settled by the substrate crystallographic orientation.

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preprint2016arXiv

Electrical Switching of Magnetization in Films of alpha-Iron with Naturally Hydroxidized Surface

Control of the magnetization vector in ferromagnetic films and heterostructures by using electric tools instead of external magnetic fields can lead to low-power memory devices. We observe the robust changes in magnetization states of a thin (about 30 nm) film of alpha-Fe covered by the naturally formed layer ( about 6 nm in thickness) of iron ohyhydroxides (FeOOH) under discharging a capacitor through the film. Strikingly, the magnetization vector is switchable by the discharge even with no any biasing field at room temperatures. In this electrically induced magnetization switching (EIMS) we reveal the key role of the FeOOH layer. We demonstrate experimental evidences that not the discharge current itself but the electric field (of the order of 10 kV/m) generated by this current is responsible for EIMS. The results reported here provide a plausible explanation of the observed phenomenon in terms of electric-field-induced weak ferromagnetism in the FeOOH layer and its coupling with the underlying alpha-Fe.

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