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N. C. Bristowe

N. C. Bristowe appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hall

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Published work

4 published item(s)

preprint2012arXiv

Electrochemical ferroelectric switching: The origin of polarization reversal in ultrathin films

Against expectations, robust switchable ferroelectricity has been recently observed in ultrathin (1 nm) ferroelectric films exposed to air [V. Garcia $et$ $al.$, Nature {\bf 460}, 81 (2009)]. Based on first-principles calculations, we show that the system does not polarize unless charged defects or adsorbates form at the surface. We propose electrochemical processes as the most likely origin of this charge. The ferroelectric polarization of the film adapts to the bound charge generated on its surface by redox processes when poling the film. This, in turn, alters the band alignment at the bottom electrode interface, explaining the observed tunneling electroresistance. Our conclusions are supported by energetics calculated for varied electrochemical scenarios.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

One-dimensional half-metallic interfaces of two-dimensional honeycomb insulators

We study zigzag interfaces between insulating compounds that are isostructural to graphene, specifically II-VI, III-V and IV-IV two-dimensional (2D) honeycomb insulators. We show that these one-dimensional interfaces are polar, with a net density of excess charge that can be simply determined by using the ideal (integer) formal valence charges, regardless of the predominant covalent character of the bonding in these materials. We justify this finding on fundamental physical grounds, by analyzing the topology of the formal polarization lattice in the parent bulk materials. First principles calculations elucidate an electronic compensation mechanism not dissimilar to oxide interfaces, which is triggered by a Zener-like charge transfer between interfaces of opposite polarity. In particular, we predict the emergence of one dimensional electron and hole gases (1DEG), which in some cases are ferromagnetic half-metallic.

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preprint2011arXiv

Proposal of a one-dimensional electron gas in the steps at the LaAlO$_3$-SrTiO$_3$ interface

The two-dimensional electron gas (2DEG) at the interface between LaAlO$_3$ (LAO) and SrTiO$_3$ (STO) has become one of the most fascinating and highly-debated oxide systems of recent times. Here we propose that a one-dimensional electron gas (1DEG) can be engineered at the step edges of the LAO/STO interface. These predictions are supported by first principles calculations and electrostatic modeling which elucidate the origin of the 1DEG as an electronic reconstruction to compensate a net surface charge in the step edge. The results suggest a novel route to increasing the functional density in these electronic interfaces.

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preprint2011arXiv

Surface defects and conduction in polar oxide heterostructures

The polar interface between LaAlO$_{3}$ and SrTiO$_{3}$ has shown promise as a field effect transistor, with reduced (nanoscale) feature sizes and potentially added functionality over conventional semiconductor systems. However, the mobility of the interfacial two-dimensional electron gas (2DEG) is lower than desirable. Therefore to progress, the highly debated origin of the 2DEG must be understood. Here we present a case for surface redox reactions as the origin of the 2DEG, in particular surface O vacancies, using a model supported by first principles calculations that describes the redox formation. In agreement with recent spectroscopic and transport measurements, we predict a stabilization of such redox processes (and hence Ti 3$d$ occupation) with film thickness beyond a critical value, which can be smaller than the critical thickness for 2D electronic conduction, since the surface defects generate trapping potentials that will affect the interface electron mobility. Several other recent experimental results, such as lack of core level broadening and shifts, find natural explanation. Pristine systems will likely require changed growth conditions or modified materials with a higher vacancy free energy.

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