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Massimiliano Stengel

Massimiliano Stengel appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.otherphysics.comp-ph

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Published work

31 published item(s)

preprint2022arXiv

Convert widespread paraelectric perovskite to ferroelectrics

While nature provides a plethora of perovskite materials, only a few exhibits large ferroelectricity and possibly multiferroicity. The majority of perovskite materials have the non-polar CaTiO$_3$(CTO)structure, limiting the scope of their applications. Based on effective Hamiltonian model as well as first-principles calculations, we propose a general thin-film design method to stabilize the functional BiFeO$_3$(BFO)-type structure, which is a common metastable structure in widespread CaTiO$_3$-type perovskite oxides. It is found that the improper antiferroelectricity in CTO-type perovskite and ferroelectricity in BFO-type perovskite have distinct dependences on mechanical and electric boundary conditions, both of which involve oxygen octahedral rotation and tilt. The above difference can be used to stabilize the highly polar BFO-type structure in many CTO-type perovskite materials.

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preprint2022arXiv

Curved Magnetism in CrI$_3$

Curved magnets attract considerable interest for their unusually rich phase diagram, often encompassing exotic (e.g., topological or chiral) spin states. Micromagnetic simulations are playing a central role in the theoretical understanding of such phenomena; their predictive power, however, rests on the availability of reliable model parameters to describe a given material or nanostructure. Here we demonstrate how non-collinear-spin polarized density-functional theory can be used to determine the flexomagnetic coupling coefficients in real systems. By focusing on monolayer CrI$_3$, we find a crossover as a function of curvature between a magnetization normal to the surface to a cycloidal state, which we rationalize in terms of effective anisotropy and Dzyaloshinskii-Moriya contributions to the magnetic energy. Our results reveal an unexpectedly large impact of spin-orbit interactions on the curvature-induced anisotropy, which we discuss in the context of existing phenomenological models.

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preprint2022arXiv

Nonadiabatic Born effective charges in metals and the Drude weight

In insulators, Born effective charges describe the electrical polarization induced by the displacement of individual atomic sublattices. Such a physical property is at first sight irrelevant for metals and doped semiconductors, where the macroscopic polarization is ill-defined. Here we show that, in clean conductors, going beyond the adiabatic approximation results in nonadiabatic Born effective charges that are well defined in the low-frequency limit. In addition, we find that the sublattice sum of the nonadiabatic Born effective charges does not vanish as it does in the insulating case, but instead is proportional to the Drude weight. We demonstrate these formal results with density functional perturbation theory calculations of Al, and electron-doped SnS$_2$ and SrTiO$_3$.

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preprint2022arXiv

Translational covariance of flexoelectricity at ferroelectric domain walls

Macroscopic descriptions of ferroelectrics have an obvious appeal in terms of efficiency and physical intuition. Their predictive power, however, has often been thwarted by the lack of a systematicp rocedure to extract the relevant materials parameters from the microscopics. Here we address this limitation by establishing an unambiguous two-way mapping between spatially inhomogeneous fields and discrete lattice modes. This yields a natural treatment of gradient couplings in the macroscopic regime via a long-wavelength expansion of the crystal Hamiltonian. Our analysis reveals an inherent arbitrariness in both the flexoelectric and polarization gradient coefficients, which we ascribe to a translational freedom in the definition of the polar distortion pattern. Remarkably, such arbitrariness cancels out in all physically measurable properties (relaxed atomic structure and energetics) derived from the model, pointing to a generalized translational covariance in the continuum description of inhomogeneous ferroelectric structures. We demonstrate our claims with extensive numerical tests on 180-degree domain walls in common ferroelectric perovskites, finding excellent agreement between the continuum model and direct first-principles calculations.

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preprint2021arXiv

Lattice-mediated bulk flexoelectricity from first principles

We present the derivation and code implementation of a first-principles methodology to calculate the lattice-mediated contributions to the bulk flexoelectric tensor. The approach is based on our recent analytical long-wavelength extension of density-functional perturbation theory [Royo and Stengel, Phys. Rev. X 9, 021050 (2019)], and avoids the cumbersome numerical derivatives with respect to the wave vector that were adopted in previous implementations. To substantiate our results, we revisit and numerically validate the sum rules that relate flexoelectricity and uniform elasticity by generalizing them to regimes where finite forces and stresses are present. We also revisit the definition of the elastic tensor under stress, especially in regards to the existing linear-response implementation. We demonstrate the performance of our method by applying it to representative cubic crystals and to the tetragonal low-temperature polymorph of SrTiO$_3$, obtaining excellent agreement with the available literature data.

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preprint2021arXiv

Rotational $g$ factors and Lorentz forces of molecules and solids from density-functional perturbation theory

Applied magnetic fields can couple to atomic displacements via generalized Lorentz forces, which are commonly expressed as gyromagnetic $g$ factors. We develop an efficient first-principles methodology based on density-functional perturbation theory to calculate this effect in both molecules and solids to linear order in the applied field. Our methodology is based on two linear-response quantities: the macroscopic polarization response to an atomic displacement (i.e., Born effective charge tensor), and the antisymmetric part of its first real-space moment (the symmetric part corresponding to the dynamical quadrupole tensor). The latter quantity is calculated via an analytical expansion of the current induced by a long-wavelength phonon perturbation, and compared to numerical derivatives of finite-wavevector calculations. We validate our methodology in finite systems by computing the gyromagnetic $g$ factor of several simple molecules, demonstrating excellent agreement with experiment and previous density-functional theory and quantum chemistry calculations. In addition, we demonstrate the utility of our method in extended systems by computing the energy splitting of the low-frequency transverse-optical phonon mode of cubic SrTiO$_3$ in the presence of a magnetic field.

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preprint2020arXiv

Ferroelectric 180 degree walls are mechanically softer than the domains they separate

Domain walls are functionally different from the domains they separate, but little is known about their mechanical properties. Using scanning probe microscopy, we have measured the mechanical response of ferroelectric 180o domain walls and observed that, despite separating domains that are mechanically identical (non-ferroelastic), the walls are mechanically distinct -- softer -- compared to the domains. This effect has been observed in different ferroelectric materials (LiNbO3, BaTiO3, PbTiO3) and with different morphologies (from single crystals to thin films) so it appears to be universal. We propose a theoretical framework that explains the domain wall softening and justifies that the effect should be common to all ferroelectrics.

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preprint2016arXiv

Unified ab initio formulation of flexoelectricity and strain-gradient elasticity

The theories of flexoelectricity and that of nonlocal elasticity are closely related, and are often considered together when modeling strain-gradient effects in solids. Here I show, based on a first-principles lattice-dynamical analysis, that their relationship is much more intimate than previously thought, and their consistent simultaneous treatment is crucial for obtaining correct physical answers. In particular, I identify a gauge invariance in the theory, whereby the energies associated to strain-gradient elasticity and flexoelectrically induced electric fields are individually reference-dependent, and only when summed up they yield a well-defined result. To illustrate this, I construct a minimal thermodynamic functional incorporating strain-gradient effects, and establish a formal link between the continuum description and ab initio phonon dispersion curves to calculate the relevant tensor quantities. As a practical demonstration, I apply such a formalism to bulk SrTiO$_3$, where I find an unusually strong contribution of nonlocal elasticity, mediated by the interaction between the ferroelectric soft mode and the transverse acoustic branches. These results have important implications towards the construction of well-defined thermodynamic theories where flexoelectricity and ferroelectricity coexist. More generally, they open exciting new avenues for the implementation of hierarchical multiscale concepts in the first-principles simulation of crystalline insulators.

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preprint2015arXiv

Electrical phase diagram of bulk BiFeO$_3$

We study the electrical behavior of multiferroic BiFeO$_3$ by means of first-principles calculations. We do so by constraining a specific component of the electric displacement field along a variety of structural paths, and by monitoring the evolution of the relevant physical properties of the crystal along the way. We find a complex interplay of ferroelectric, antiferroelectric and antiferrodistortive degrees of freedom that leads to an unusually rich electrical phase diagram, which strongly departs from the paradigmatic double-well model of simpler ferroelectric materials. In particular, we show that many of the structural phases that were recently reported in the literature, e.g. those characterized by a giant aspect ratio, can be accessed via application of an external electric field starting from the $R3c$ ground state. Our results also reveal ways in which non-polar distortions (e.g., the antiferrodistortive ones associated with rotations of the oxygen octahedra in the perovskite lattice) can be controlled by means of applied electric fields, as well as the basic features characterizing the switching between the ferroelectric and antiferroelectric phases of BiFeO$_{3}$. We discuss the multi-mode couplings behind this wealth of effects, while highlighting the implications of our work as regards both theoretical and experimental literature on BiFeO$_{3}$.

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preprint2015arXiv

Electrostatic engineering of strained ferroelectric perovskites from first-principles

Design of novel artificial materials based on ferroelectric perovskites relies on the basic principles of electrostatic coupling and in-plane lattice matching. These rules state that the out-of-plane component of the electric displacement field and the in-plane components of the strain are preserved across a layered superlattice, provided that certain growth conditions are respected. Intense research is currently directed at optimizing materials functionalities based on these guidelines, often with remarkable success. Such principles, however, are of limited practical use unless one disposes of reliable data on how a given material behaves under arbitrary electrical and mechanical boundary conditions. Here we demonstrate, by focusing on the prototypical ferroelectrics PbTiO3 and BiFeO3 as testcases, how such information can be calculated from first principles in a systematic and efficient way. In particular, we construct a series of two-dimensional maps that describe the behavior of either compound (e.g. concerning the ferroelectric polarization and antiferrodistortive instabilities) at any conceivable choice of the in-plane lattice parameter, a, and out-of-plane electric displacement, D. In addition to being of immediate practical applicability to superlattice design, our results bring new insight into the complex interplay of competing degrees of freedom in perovskite materials, and reveal some notable instances where the behavior of these materials depart from what naively is expected.

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preprint2015arXiv

First-principles theory of flexoelectricity

In this Chapter we provide an overview of the current first-principles perspective on flexoelectric effects in crystalline solids. We base our theoretical formalism on the long-wave expansion of the electrical response of a crystal to an acoustic phonon perturbation. In particular, we recover the known expression for the piezoelectric tensor from the response at first order in wavevector ${\bf q}$, and then obtain the flexoelectric tensor by extending the formalism to second order in $\bf q$. We put special emphasis on the issue of surface effects, which we first analyze heuristically, and then treat more carefully by presenting a general theory of the microscopic response to an arbitrary inhomogeneous strain. We demonstrate our approach by presenting a full calculation of the flexoelectric response of a SrTiO$_3$ film, where we point out an unusually strong dependence of the bending-induced open-circuit voltage on the choice of surface termination. Finally, we briefly discuss some remaining open issues concerning the methodology and some promising areas for future research.

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preprint2015arXiv

From flexoelectricity to absolute deformation potentials: The case of SrTiO$_3$

Based on recent developments in the first-principles theory of flexoelectricity, we generalize the concept of absolute deformation potential to arbitrary nonpiezoelectric insulators and deformation fields. To demonstrate our formalism, we calculate the response of the band edges of SrTiO$_3$ to both dynamic (sound waves) and static (bending) mechanical loads, respectively at the bulk level and in a slab geometry. Our results have important implications for the understanding of strain-gradient-related phenomena in crystalline insulators, formally unifying the description of band-structure and electrostatic effects.

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preprint2014arXiv

Ab initio design of charge-mismatched ferroelectric superlattices

We present a systematic approach to modeling the electrical and structural properties of charge-mismatched superlattices from first principles. Our strategy is based on bulk calculations of the parent compounds, which we perform as a function of in-plane strain and out-of-plane electric displacement field. The resulting two-dimensional phase diagrams allow us to accurately predict, without performing further calculations, the behavior of a layered heterostructure where the aforementioned building blocks are electrostatically and elastically coupled, with an arbitrary choice of the interface charge (originated from the polar discontinuity) and volume ratio. By using the [PbTiO3]_m/[BiFeO3]_n system as test case, we demonstrate that interface polarity has a dramatic impact on the ferroelectric behavior of the superlattice, leading to the stabilization of otherwise inaccessible bulk phases.

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preprint2014arXiv

First-principles study of the multi-mode anti-ferroelectric transition of PbZrO3

We have studied ab initio the phase transition in PbZrO3, a perovskite oxide usually presented as the prototypic anti-ferroelectric material. Our work reveals the crucial role that anti-ferrodistortive modes -- involving concerted rotations of the oxygen octahedra in the structure -- play in the transformation, as they select the observed anti-ferroelectric phase, among competing structural variants, via a cooperative trilinear coupling.

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preprint2014arXiv

Surface control of flexoelectricity

The polarization response of a material to a strain gradient, known as flexoelectricity, holds great promise for novel electromechanical applications. Despite considerable recent progress, however, the effect remains poorly understood. From both the fundamental and practical viewpoints, it is of crucial importance to know whether the coupling coefficients are primarily governed by the properties of the bulk material or by the details of the sample surface. Here we provide, by means of first-principles calculations, quantitative evidence supporting the latter scenario. In particular, we demonstrate that a SrTiO$_3$ film can yield a positive or negative flexoelectric voltage depending on its surface termination. This result points to a full control of the flexoelectric effect via surface/interface engineering, opening exciting new avenues for device design.

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preprint2013arXiv

Flexoelectricity from density-functional perturbation theory

We derive the complete flexoelectric tensor, including electronic and lattice-mediated effects, of an arbitrary insulator in terms of the microscopic linear response of the crystal to atomic displacements. The basic ingredient, which can be readily calculated from first principles in the framework of density-functional perturbation theory, is the quantum-mechanical probability current response to a long-wavelength acoustic phonon. Its second-order Taylor expansion in the wavevector q around the Gamma (q=0) point in the Brillouin zone naturally yields the flexoelectric tensor. At order one in q we recover Martin's theory of piezoelectricity [R. M. Martin, Phys. Rev. B 5, 1607 (1972)], thus providing an alternative derivation thereof. To put our derivations on firm theoretical grounds, we perform a thorough analysis of the nonanalytic behavior of the dynamical matrix and other response functions in a vicinity of Gamma. Based on this analysis, we find that there is an ambiguity in the specification of the "zero macroscopic field" condition in the flexoelectric case; such arbitrariness can be related to an analytic band-structure term, in close analogy to the theory of deformation potentials. As a byproduct, we derive a rigorous generalization of the Cochran-Cowley formula [W. Cochran and R. A. Cowley, J. Phys. Chem. Solids 23, 447 (1962)] to higher orders in q. This can be of great utility in building reliable atomistic models of electromechanical phenomena, as well as for improving the accuracy of the calculation of phonon dispersion curves. Finally, we discuss the physical interpretation of the various contributions to the flexoelectric response, either in the static or dynamic regime.

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preprint2012arXiv

Electrical properties of improper ferroelectrics from first principles

We study the interplay of structural and polar distortions in hexagonal YMnO3 and short-period PbTiO3/SrTiO3 superlattices by means of first-principles calculations at constrained electric displacement field D. We find that in YMnO3 the tilts of the oxygen polyhedra produce a robustly polar ground state, which persists at any choice of the electrical boundary conditions. Conversely, in PTO/STO the antiferrodistortive instabilities alone do not break inversion symmetry, and open-circuit bundary conditions restore a non-polar state. We suggest that this qualitative difference naturally provides a route to rationalizing the concept of "improper ferroelectricity" from the point of view of first-principles theory. We discuss the implications of our arguments for the design of novel multiferroic materials with enhanced functionalities, and for the symmetry analysis of the phase transitions.

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preprint2012arXiv

Electrochemical ferroelectric switching: The origin of polarization reversal in ultrathin films

Against expectations, robust switchable ferroelectricity has been recently observed in ultrathin (1 nm) ferroelectric films exposed to air [V. Garcia $et$ $al.$, Nature {\bf 460}, 81 (2009)]. Based on first-principles calculations, we show that the system does not polarize unless charged defects or adsorbates form at the surface. We propose electrochemical processes as the most likely origin of this charge. The ferroelectric polarization of the film adapts to the bound charge generated on its surface by redox processes when poling the film. This, in turn, alters the band alignment at the bottom electrode interface, explaining the observed tunneling electroresistance. Our conclusions are supported by energetics calculated for varied electrochemical scenarios.

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preprint2012arXiv

Ferroelectricity in ultrathin film capacitors

Going down to the limit of ultrathin films holds promise for a new generation of devices such as ferroelectric tunnel junctions or resistive memories. However, these length scales also make the devices sensitive to parasitic effects related to miniaturization, and a better understanding of what happens as size is reduced is of practical importance for the future development of these devices. As the experimental advances in materials preparation and characterization have come together with great progress in theoretical modeling of ferroelectrics, both theorists and experimentalists can finally probe the same length and time scales. This allows realtime feedback between theory and experiment, with new discoveries now routinely made both in the laboratory and on the computer. Throughout this chapter, we will highlight the recent advances in density functional theory based modeling and the role it played in our understanding of ultrathin ferroelectrics. We will begin with a brief introduction to ferroelectricity and ferroelectric oxides, followed by an overview of the major theoretical developments. We will then discuss some of the subtleties of ferroelectricity in perovskite oxides, before turning our attention to the main subject of the chapter -- ferroelectricity in ultrathin films. We will discuss in detail the influence of the mechanical, electrical and chemical boundary conditions on the stability of the polar state in a parallel plate capacitor geometry, introducing the notion of depolarization fields that tend to destabilize ferroelectricity. We will look at other ways in which a thin ferroelectric can preserve its polar state, focusing on ferroelectric domains and domain walls. Finally, we will briefly discuss artificially layered ferroelectrics and the potential they hold as tailor-made materials for electronic applications.

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preprint2012arXiv

One-dimensional half-metallic interfaces of two-dimensional honeycomb insulators

We study zigzag interfaces between insulating compounds that are isostructural to graphene, specifically II-VI, III-V and IV-IV two-dimensional (2D) honeycomb insulators. We show that these one-dimensional interfaces are polar, with a net density of excess charge that can be simply determined by using the ideal (integer) formal valence charges, regardless of the predominant covalent character of the bonding in these materials. We justify this finding on fundamental physical grounds, by analyzing the topology of the formal polarization lattice in the parent bulk materials. First principles calculations elucidate an electronic compensation mechanism not dissimilar to oxide interfaces, which is triggered by a Zener-like charge transfer between interfaces of opposite polarity. In particular, we predict the emergence of one dimensional electron and hole gases (1DEG), which in some cases are ferromagnetic half-metallic.

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preprint2011arXiv

Band alignment at metal/ferroelectric interfaces: insights and artifacts from first principles

Based on recent advances in first-principles theory, we develop a general model of the band offset at metal/ferroelectric interfaces. We show that, depending on the polarization of the film, a pathological regime might occur where the metallic carriers populate the energy bands of the insulator, making it metallic. As the most common approximations of density functional theory are affected by a systematic underestimation of the fundamental band gap of insulators, this scenario is likely to be an artifact of the simulation. We provide a number of rigorous criteria, together with extensive practical examples, to systematically identify this problematic situation in the calculated electronic and structural properties of ferroelectric systems. We discuss our findings in the context of earlier literature studies, where the issues described in this work have often been overlooked. We also discuss formal analogies to the physics of polarity compensation at LaAlO3/SrTiO3 interfaces, and suggest promising avenues for future research.

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preprint2011arXiv

Electrostatic stability of insulating surfaces: Theory and applications

We analyze the electrostatic stability of insulating surfaces in the framework of the bulk modern theory of polarization. We show that heuristic arguments based on a fully ionic limit find formal justification at the microscopic level, even in solids where the bonding has a mixed ionic/covalent character. Based on these arguments, we propose simple criteria to construct arbitrary non-polar terminations of a given bulk crystal. We illustrate our ideas by performing model calculations of several LaAlO3 and SrTiO3 surfaces. We find, in the case of ideal LaAlO3 surfaces, that cleavage along a higher-index (n10) direction is energetically favorable compared to the polar (100) orientation. In the presence of external adsorbates or defects the picture can change dramatically, as we demonstrate in the case of H2O/LaAlO3(100).

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preprint2011arXiv

First-Principles Modeling of Pt/LaAlO3/SrTiO3 Capacitors Under an External Bias Potential

We study the electrical properties of Pt/LaAlO3/SrTiO3 capacitors under the action of an external bias potential, using first-principles simulations performed at constrained electric displacement field. A complete set of band diagrams, together with the relevant electrical characteristics (capacitance and built-in fields), are determined as a function of LaAlO3 thickness and the applied potential.We find that the internal field in LaAlO3 monotonically decreases with increasing thickness; hence, the occurrence of spontaneous Zener tunneling is ruled out in this system.We discuss the implications of our results in the light of recent experimental observations on biased LaAlO3/SrTiO3 junctions involving metallic top electrodes.

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preprint2010arXiv

First-principles modeling of electrostatically doped perovskite systems

Macroscopically, confined electron gases at polar oxide interfaces are rationalized within the simple "polar catastrophe" model. At the microscopic level, however, many other effects such as electric fields, structural distortions and quantum-mechanical interactions enter into play. Here we show how to bridge the gap between these two length scales, by combining the accuracy of first-principles methods with the conceptual simplicity of model Hamiltonian approaches. To demonstrate our strategy, we address the equilibrium distribution of the compensating free carriers at polar LaAlO3/SrTiO3 interfaces. Remarkably, a model including only calculated bulk properties of SrTiO3 and no adjustable parameters accurately reproduces our full first-principles results. Our strategy provides a unified description of charge compensation mechanisms in SrTiO3-based systems.

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preprint2009arXiv

Berry-phase theory of polar discontinuities at oxide-oxide interfaces

In the framework of the modern theory of polarization, we rigorously establish the microscopic nature of the electric displacement field D. In particular, we show that the longitudinal component of D is preserved at a coherent and insulating interface. To motivate and elucidate our derivation, we use the example of LAO/STO interfaces and superlattices, where the validity of the above conservation law is not immediately obvious. Our results generalize the "locality principle" of constrained-D density functional theory to the first-principles modeling of charge-mismatched systems.

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preprint2009arXiv

First-principles modeling of ferroelectric capacitors via constrained-D calculations

First-principles modeling of ferroelectric capacitors presents several technical challenges, due to the coexistence of metallic electrodes, long-range electrostatic forces and short-range interface chemistry. Here we show how these aspects can be efficiently and accurately rationalized by using a finite-field density-functional theory formalism in which the fundamental electrical variable is the displacement field D. By performing calculations on model Pt/BaTiO3/Pt and Au/BaZrO3/Au capacitors we demonstrate how the interface-specific and bulk-specific properties can be identified and rigorously separated. Then, we show how the electrical properties of capacitors of arbitrary thickness and geometry (symmetric or asymmetric) can be readily reconstructed by using such information. Finally, we show how useful observables such as polarization and dielectric, piezoelectric and electrostrictive coefficients are easily evaluated as a byproduct of the above procedure. We apply this methodology to elucidate the relationship between chemical bonding, Schottky barriers and ferroelectric polarization at simple-metal/oxide interfaces. We find that BO2-electrode interfaces behave analogously to a layer of linear dielectric put in series with a bulk-like perovskite film, while a significant non-linear effect occurs at AO-electrode interfaces.

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preprint2009arXiv

First-principles study of high-field piezoelectricity in tetragonal PbTiO3

We calculate from first principles the nonlinear piezoelectric response of ferroelectric PbTiO3 for the case of a polarization-enhancing electric field applied along the tetragonal axis. We focus mainly on the case of fixed in-plane lattice constants, corresponding to epitaxially constrained thin films. We find that the dependence of the c/a ratio on electric field is almost linear in the range up to 500 MV/m, with little saturation. This result contrasts with expectations from Landau-Devonshire approaches based on experimental results obtained at lower fields, but is in qualitative agreement with a recent experiment in which higher fields were attained using pulsed-field methods. We also study cases in which the in-plane epitaxy constraint is removed, or an artificial negative pressure is applied, or both. These calculations demonstrate that PbTiO3 can show a strikingly non-linear piezoelectric response under modified elastic boundary conditions.

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preprint2008arXiv

Electric displacement as the fundamental variable in electronic-structure calculations

Finite-field calculations in periodic insulators are technically and conceptually challenging, due to fundamental problems in defining polarization in extended solids. While significant progress has been made recently with the establishment of techniques to fix the electric field E or the macroscopic polarization P in first-principles calculations, both methods lack the ease of use and conceptual clarity of standard zero-field calculations. Here we develop a new formalism in which the electric displacement D, rather than E or P, is the fundamental electrical variable. Fixing D has the intuitive interpretation of imposing open-circuit electrical boundary conditions, which is particularly useful in studying ferroelectric systems. Furthermore, the analogy to open-circuit capacitors suggests an appealing reformulation in terms of free charges and potentials, which dramatically simplifies the treatment of stresses and strains. Using PbTiO3 as an example, we show that our technique allows full control over the electrical variables within the density functional formalism.

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preprint2008arXiv

Enhancement of ferroelectricity at metal/oxide interfaces

By performing first-principles calculations on four capacitor structures based on BaTiO3 and PbTiO3, we determine the intrinsic interfacial effects that are responsible for the destabilization of the polar state in thin-film ferroelectric devices. We show that, contrary to the established interpretation, the interfacial capacitance depends crucially on the local chemical environment of the interface through the force constants of the metal-oxide bonds, and is not necessarily related to the bulk screening properties of the electrode material. In particular, in the case of interfaces between AO-terminated perovskites and simple metals, we demonstrate a novel mechanism of "interfacial ferroelectricity" that produces an overall enhancement of the ferroelectric instability of the film, rather than a suppression as is usually assumed. The resulting "negative dead layer" suggests a route to thin-film ferroelectric devices that are free of deleterious size effects.

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preprint2007arXiv

Self-interaction correction with Wannier functions

We describe the behavior of the Perdew-Zunger self-interaction-corrected local density approximation (SIC-LDA) functional when implemented in a plane-wave pseudopotential formalism with Wannier functions. Prototypical semiconductors and wide-bandgap oxides show a large overcorrection of the LDA bandgap. Application to transition-metal oxides and elements with d electrons is hindered by a serious breaking of the spherical symmetry, which appears even in a closed shell free atom. Our results indicate that, when all spherical approximations are lifted, the general applicability of orbital-dependent potentials is very limited and should be reconsidered in favor of rotationally invariant functionals.

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preprint2005arXiv

Accurate polarization within a unified Wannier function formalism

We present an alternative formalism for calculating the maximally localized Wannier functions in crystalline solids, obtaining an expression which is extremely simple and general. In particular, our scheme is exactly invariant under Brillouin zone folding, and therefore it extends trivially to the Gamma-point case. We study the convergence properties of the Wannier functions, their quadratic spread and centers as obtained by our simplified technique. We show how this convergence can be drastically improved by a simple and inexpensive ``refinement'' step, which allows for very efficient and accurate calculations of the polarization in zero external field.

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