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N. C. Bartelt

N. C. Bartelt contributes to research discovery and scholarly infrastructure.

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Published work

5 published item(s)

preprint2015arXiv

On the rotational alignment of graphene domains grown on Ge(110) and Ge(111)

We have used low-energy electron diffraction and microscopy to compare the growth of graphene on hydrogen-free Ge(111) and Ge(110) from an atomic carbon flux. Growth on Ge(110) leads to significantly better rotational alignment of graphene domains with the substrate. To explain the poor rotational alignment on Ge(111), we have investigated experimentally and theoretically how the adatom reconstructions on Ge interact with graphene. We find that the ordering transition of the adatom reconstruction of Ge(111) is not significantly perturbed by graphene. Density functional theory calculations show that graphene on reconstructed Ge(110) has large-amplitude corrugations, whereas it is remarkably flat on reconstructed Ge(111). We argue that the absence of corrugations prevents graphene islands from locking into a preferred orientation.

preprint2014arXiv

Metal-insulator transition of the reduced surface of yttria-stabilized zirconia near Pt electrodes

The electrochemical reactions of solid oxide fuel cells occur in the region where gas-phase species, electrode, and electrolyte coincide. When the electrode is an ionic insulator and the electrolyte is an electronic insulator, this `triple phase boundary' is assumed to have atomic dimensions. Here we use photoemission electron microscopy to show that the reduced surface of the electrolyte yttria-stabilized zirconia (YSZ) undergoes a metal-insulator transition near Pt negative electrodes. YSZ's electron conducting region functions as an extended triple phase boundary that can be many microns in size, depending on oxygen pressure, temperature, applied voltage, and time.

preprint2011arXiv

Origin of the Mosaicity in Graphene Grown on Cu(111)

We use low-energy electron microscopy to investigate how graphene grows on Cu(111). Graphene islands first nucleate at substrate defects such as step bunches and impurities. A considerable fraction of these islands can be rotationally misaligned with the substrate, generating grain boundaries upon interisland impingement. New rotational boundaries are also generated as graphene grows across substrate step bunches. Thus, rougher substrates lead to higher degrees of mosaicity than do flatter substrates. Increasing the growth temperature improves crystallographic alignment. We demonstrate that graphene growth on Cu(111) is surface diffusion limited by comparing simulations of the time evolution of island shapes with experiments. Islands are dendritic with distinct lobes, but unlike the polycrystalline, four-lobed islands observed on (100)-textured Cu foils, each island can be a single crystal. Thus, epitaxial graphene on smooth, clean Cu(111) has fewer structural defects than it does on Cu(100).

preprint2010arXiv

Graphene Growth by Metal Etching on Ru(0001)

Low-energy electron microscopy (LEEM) reveals a new mode of graphene growth on Ru(0001) in which Ru atoms are etched from a step edge and injected under a growing graphene sheet. Based on density functional calculations, we propose a model wherein injected Ru atoms form metastable islands under the graphene. Scanning tunneling microscopy (STM) reveals that dislocation networks exist near step edges, consistent with some of the injected atoms being incorporated into the topmost Ru layer, thereby increasing its density.

preprint2009arXiv

Factors influencing graphene growth on metal surfaces

Graphene forms from a relatively dense, tightly-bound C-adatom gas, when elemental C is deposited on or segregates to the Ru(0001) surface. Nonlinearity of the graphene growth rate with C adatom density suggests that growth proceeds by addition of C atom clusters to the graphene edge. The generality of this picture has now been studied by use of low-energy electron microscopy (LEEM) to observe graphene formation when Ru(0001) and Ir(111) surfaces are exposed to ethylene. The finding that graphene growth velocities and nucleation rates on Ru have precisely the same dependence on adatom concentration as for elemental C deposition implies that hydrocarbon decomposition only affects graphene growth through the rate of adatom formation; for ethylene, that rate decreases with increasing adatom concentration and graphene coverage. Initially, graphene growth on Ir(111) is like that on Ru: the growth velocity is the same nonlinear function of adatom concentration (albeit with much smaller equilibrium adatom concentrations, as we explain with DFT calculations of adatom formation energies). In the later stages of growth, graphene crystals that are rotated relative to the initial nuclei nucleate and grow. The rotated nuclei grow much faster. This difference suggests first, that the edge-orientation of the graphene sheets relative to the substrate plays an important role in the growth mechanism, and second, that attachment of the clusters to the graphene is the slowest step in cluster addition, rather than formation of clusters on the terraces.