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J. M. Wofford

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cond-mat.mtrl-sci

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preprint2015arXiv

On the rotational alignment of graphene domains grown on Ge(110) and Ge(111)

We have used low-energy electron diffraction and microscopy to compare the growth of graphene on hydrogen-free Ge(111) and Ge(110) from an atomic carbon flux. Growth on Ge(110) leads to significantly better rotational alignment of graphene domains with the substrate. To explain the poor rotational alignment on Ge(111), we have investigated experimentally and theoretically how the adatom reconstructions on Ge interact with graphene. We find that the ordering transition of the adatom reconstruction of Ge(111) is not significantly perturbed by graphene. Density functional theory calculations show that graphene on reconstructed Ge(110) has large-amplitude corrugations, whereas it is remarkably flat on reconstructed Ge(111). We argue that the absence of corrugations prevents graphene islands from locking into a preferred orientation.

preprint2015arXiv

Synthesis of atomically thin hexagonal boron nitride films on nickel foils by molecular beam epitaxy

Hexagonal boron nitride (h-BN) is a layered two-dimensional material with properties that make it promising as a dielectric in various applications. We report the growth of h-BN films on Ni foils from elemental B and N using molecular beam epitaxy. The presence of crystalline h-BN over the entire substrate is confirmed by Raman spectroscopy. Atomic force microscopy is used to examine the morphology and continuity of the synthesized films. A scanning electron microscopy study of films obtained using shorter depositions offers insight into the nucleation and growth behavior of h-BN on the Ni substrate. The morphology of h-BN was found to evolve from dendritic, star-shaped islands to larger, smooth triangular ones with increasing growth temperature.

preprint2011arXiv

Origin of the Mosaicity in Graphene Grown on Cu(111)

We use low-energy electron microscopy to investigate how graphene grows on Cu(111). Graphene islands first nucleate at substrate defects such as step bunches and impurities. A considerable fraction of these islands can be rotationally misaligned with the substrate, generating grain boundaries upon interisland impingement. New rotational boundaries are also generated as graphene grows across substrate step bunches. Thus, rougher substrates lead to higher degrees of mosaicity than do flatter substrates. Increasing the growth temperature improves crystallographic alignment. We demonstrate that graphene growth on Cu(111) is surface diffusion limited by comparing simulations of the time evolution of island shapes with experiments. Islands are dendritic with distinct lobes, but unlike the polycrystalline, four-lobed islands observed on (100)-textured Cu foils, each island can be a single crystal. Thus, epitaxial graphene on smooth, clean Cu(111) has fewer structural defects than it does on Cu(100).