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N. A. Porter

N. A. Porter contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-sci cond-mat.str-el

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preprint2014arXiv

DMI meter: Measuring the Dzyaloshinskii-Moriya interaction inversion in Pt/Co/Ir/Pt multilayers

We describe a field-driven domain wall creep-based method for the quantification of interfacial Dzyaloshinskii-Moriya interactions (DMI) in perpendicularly magnetized thin films. The use of only magnetic fields to drive wall motion removes the possibility of mixing with current-related effects such as spin Hall effect or Rashba field, as well as the complexity arising from lithographic patterning. We demonstrate this method on sputtered Pt/Co/Ir/Pt multilayers with a variable Ir layer thickness. By inserting an ultrathin layer of Ir at the Co/Pt interface we can reverse the sign of the effective DMI acting on the sandwiched Co layer, and therefore continuously change the domain wall (DW) structure from right- to the left-handed Néel wall. We also show that the DMI shows exquisite sensitivity to the exact details of the atomic structure at the film interfaces by comparison with a symmetric epitaxial Pt/Co/Pt multilayer.

preprint2014arXiv

Scattering mechanisms in textured FeGe thin films: magnetoresistance and the anomalous Hall effect

A textured thin film of FeGe was grown by magnetron sputtering with a helimagnetic ordering temperature of TN = 276 +/- 2 K. From 5 K to room temperature a variety of scattering processes contribute towards the overall longitudinal and Hall resistivities. These were studied by combining magnetometry and magnetotransport measurements. The high-field magnetoresistance (MR) displays three clear temperature regimes: Lorentz force MR dominates at low temperatures, above T ~ 80 K scattering from spin-waves predominates, whilst finally for T > 200 K scattering from fluctuating local moments describes the MR. At low fields, where the magnetisation is no longer technically saturated, we find a scaling of magnetoresistance with the square of the magnetisation, indicating that the MR due to the unwinding of spins in the conical phase arises from a similar mechanism to that in magnetic domain walls. This MR is only visible up to a temperature of about 200 K. No features can be found in the temperature or field dependence of the longitudinal resistivity that belie the presence of the underlying magnetic phase transition at TN: the marked changes in behavior are at much lower temperatures. The anomalous Hall effect has a dramatic temperature dependence in which the anomalous Hall resistivity scales quadratically with the longitudinal resistivity: comparison with anomalous Hall scaling theory shows that our system is in the intrinsic 'moderately dirty' regime. Lastly, we find evidence of a topological Hall effect of size 100 ~Ohm cm.

preprint2013arXiv

Strain-induced effects on the magnetic and electronic properties of epitaxial Fe$_{1-x}$Co$_{x}$Si thin films

We have investigated the Co-doping dependence of the structural, transport, and magnetic properties of ε-FeCoSi epilayers grown by molecular beam epitaxy on silicon (111) substrates. Low energy electron diffraction, atomic force microscopy, X-ray diffraction, and high resolution transmission electron microscopy studies have confirmed the growth of phase-pure, defect-free ε-FeCoSi epitaxial films with a surface roughness of ~1 nm. These epilayers are strained due to lattice mismatch with the substrate, deforming the cubic B20 lattice so that it becomes rhombohedral. The temperature dependence of the resistivity changes as the Co concentration is increased, being semiconducting-like for low $x$ and metallic-like for x \gtrsim 0.3. The films exhibit the positive linear magnetoresistance that is characteristic of ε-FeCoSi below their magnetic ordering temperatures $T_\mathrm{ord}$, as well as the huge anomalous Hall effect of order several μΩcm. The ordering temperatures are higher than those observed in bulk, up to 77 K for x = 0.4. The saturation magnetic moment of the films varies as a function of Co doping, with a contribution of ~1 μ_{B}/ Co atom for x \lesssim 0.25. When taken in combination with the carrier density derived from the ordinary Hall effect, this signifies a highly spin-polarised electron gas in the low x, semiconducting regime.