BZPEERPapers, people, evidence and research paths
Menu

Discover

SearchFind papers, people, topics, institutions and opportunities from one place.GraphSee how papers, authors, topics and evidence connect.

Research tools

HomeContinue from the papers, people and topics that matter now.CollectionsTurn saved papers into reading lists, evidence maps and shareable context.ResearchReconstruct the path that led you from search to paper to question.CollaborationMove from a paper, topic or expert request into a focused thread.PublishCreate full-text research articles with metadata, formulas and versions.

Network

ExpertsFind specialists whose work and reviews explain why they can help.CommunitiesJoin research groups organized around papers, topics and shared evidence.

Opportunities

ListingsBrowse roles, calls and collaborations connected to real research context.

Account

Log inReturn to your saved papers, graph views and active threads.Create accountStart saving papers, building a research trail and joining teams.
Log inCreate account

Source author record

Mukul Gupta

Mukul Gupta appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mtrl-scicond-mat.mes-hallphysics.app-ph

Catalog footprint

What is connected

17works
3topics
4close collaborators

Actions

Connect this record

Log in to claim
Open graphBrowse works

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

17 published item(s)

preprint2025arXiv

Extending the Growth Temperature-N Concentration Regime Through Pd Doping in Fe4N Thin Films

Fe4N is a well-known anti-perovskite compound exhibiting high magnetization, high chemical stability, low coercivity, high Curie temperature, and high spin-polarization ratio. Therefore, it is a viable candidate for applications in spintronic and magnetic storage devices. However, the Fe4N phase is formed in a narrow substrate temperature (Ts)-N concentration (Nc) regime in the phase diagram of Fe-N. It has been observed that a slight N deficiency will lead to impurity of alpha-Fe, and some N efficiency would result in epsilon-Fe3N phase. Through this work, it has been demonstrated that the doping of Pd can be suitably utilized to extend the Ts-Nc regime for the growth of Fe4N thin films. EXAFS analysis indicate that Pd atoms are substituting corner Fe atoms. Magnetization measurements reveal that the saturation magnetization reduces nominally with Pd doping up to 13 at.%. Therefore, it is foreseen that Pd doping is effective in extending the Fe4N phase formation regime without a significant impact on its structural, electronic, and magnetic properties.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Light-induced giant and persistent changes in the converse magnetoelastic effects in Ni/BaTiO3 multiferroic heterostructure

Magnetoelastic and magnetoelectric coupling in the artificial multiferroic heterostructures facilitate valuable features for device applications such as magnetic field sensors and electric write magnetic-read memory devices. In a ferromagnetic/ferroelectric heterostructures, the strain mediated coupling exploits piezoelectricity/electrostriction in ferroelectric phase and magnetostriction/piezomagnetism in ferromagnetic phase. Such verity of these combined effect can be manipulated by an external perturbation, such as electric field, temperature or magnetic field. Here, we demonstrate the remote-controlled tunability of these effects under the visible, coherent and polarized light. The combined surface and bulk magnetic study of domain-correlated Ni/BaTiO3 heterostructure reveals that the system is strong sensitive about the light illumination via the combined effect of converse piezoelectric, magnetoelastic coupling and converse magnetostriction. Well-defined ferroelastic domain structure is fully transferred from a tetragonal ferroelectric to magnetostrictive layer via interface strain transfer during the film growth. The visible light illumination is used to manipulate the original ferromagnetic microstructure by the light-induced domain wall motion in ferroelectric, consequently the domain wall motion in the ferromagnetic layer. Our findings mimic the attractive remote-controlled ferroelectric random-access memory write and magnetic random-access memory read application scenarios, hence, can be proven as a novel perspective for room temperature device applications.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Synthesis and study of ScN thin films

To contemplate an alternative approach for the minimization of diffusion at high temperature depositions, present findings impart viability of room-temperature deposited reactively sputtered ScN thin film samples. The adopted room temperature route endows precise control over the $R_{N_2}$ flow for a methodical structural phase evolution from Sc$\to$ScN and probe the correlated physical aspects of the highly textured ScN samples. In the nitrided regime i.e. at $R_{N_2}$ = 2.5-100% flow, incorporation of unintentional oxygen defects were evidenced from surface sensitive soft x-ray absorption spectroscopy study, though less compared to their metal ($R_{N_2} = 0\%$) and interstitial ($R_{N_2} = 1.6\%$) counterparts, due to higher Gibb's free energy for Sc-O-N formation with no trace of ligand field splitting around the O K-edge spectra. To eradicate the sceptism of appearance of N K-edge (401.6 eV) and Sc L-edge (402.2 eV) absorption spectra adjacent to each other, the nascent Sc K-edge study has been adopted for the first time to validate complementary insight on the metrical parameters of the Sc-N system taken into consideration. Optical bandgaps of the polycrystalline ScN thin film samples were found to vary between 2.25-2.62 eV as obtained from the UV-Vis spectroscopy, whereas, the nano-indentation hardness and modulus of the as-deposited samples lie between 15-34GPa and 152-476GPa, respectively following a linearly increasing trend of resistance to plastic deformations. Besides, contrary to other early 3d transition metal nitrides (TiN, VN, CrN), a comprehensive comparison of noticeably large homogeneity range in Sc-N has been outlined to apprehend the minuscule lattice expansion over the large $R_{N_2}$ realm.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Structural, Electronic, and Magnetic Properties of HiPIMS Grown Co-N Thin Films

We studied the growth behavior, structural, electronic, and magnetic properties of cobalt nitride (Co-N) thin films deposited using direct current (dc) and high power impulse magnetron sputtering (HiPIMS) processes. The N$_2$ partial gas flow (\pn) was varied in close intervals to achieve the optimum conditions for the growth of tetra cobalt nitride (\tcn) phase. We found that Co-N films grown using HiPIMS process adopt (111) orientation as compared to the growth taking place along the (100) direction in the dcMS process. It was observed that HiPIMS grown Co-N~films were superior in terms of crystallite size and uniform surface morphology. The local structure of films was investigated using x-ray absorption fine structure (XAFS) measurements. We found that the high energy of adatoms in the HiPIMS technique assisted in the greater stabilization of fcc-Co and novel \tcn~phase relative to the dcMS process. Magnetic properties of Co-N thin films were studied using magneto-optical Kerr effect, vibrating sample magnetometry and polarized neutron reflectivity. It was found that though the saturation magnetization remains almost similar in films grown by dcMS or HiPIMS processes, they differ in terms of their magnetic anisotropy. Such variation can be understood in terms of differences in the growth mechanisms in dcMS and HiPIMS processes affecting the local structure of resulting \tcn~phase.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Study of Reactively Sputtered Nickel Nitride Thin Films

Nickel nitride (Ni-N) thin film samples were deposited using reactive magnetron sputtering process utilizing different partial flow of N2 (RN2). They were characterized using x-ray reflectivity (XRR), x-ray diffraction (XRD) and x-ray absorption near edge spectroscopy (XANES) taken at N K-edge and Ni L-edges. From XRR measurements, we find that the deposition rate and the density of Ni-N films decrease due to successively progression in RN2, signifying that Ni-N alloys and compounds are forming both at Ni target surface and also within the thin film samples. The crystal structure obtained from XRD measurements suggest an evolution of different Ni-N compounds given by: Ni, Ni(N), Ni4N, Ni3N, and Ni2N with a gradual rise in RN2. XANES measurements further confirm these phases, in agreement with XRD results. Polarized neutron reflectivity measurements were performed to probe the magnetization, and it was found Ni-N thin films become non-magnetic even when N incorporation increases beyond few at%. Overall growth behavior of Ni-N samples has been compared with that of rather well-known Fe-N and Co-N systems, yielding similarities and differences among them.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Synthesis and study of highly dense and smooth TiN thin films

This study aims towards a systematic reciprocity of the tunable synthesis parameters - partial pressure of N$_2$ gas, ion energy (\Ei) and Ti interface in TiN thin film samples deposited using ion beam sputtering at ambient temperature (300\,K). At the optimum partial pressure of N$_2$ gas, samples were prepared with or without Ti interface at \Ei~=~1.0 or 0.5\,keV. They were characterized using x-ray reflectivity (XRR) to deduce thickness, roughness and density. The roughness of TiN thin films was found to be below 1\,nm, when deposited at the lower \Ei~of 0.5\,keV and when interfaced with a layer of Ti. Under these conditions, the density of TiN sample reaches to 5.80($\pm$0.03)\,g~cm$^{-3}$, a value highest hitherto for any TiN sample. X-ray diffraction and electrical resistivity measurements were performed. It was found that the cumulative effect of the reduction in \Ei~from 1.0 to 0.5\,keV and the addition of Ti interface favors (111) oriented growth leading to dense and smooth TiN films and a substantial reduction in the electrical resistivity. The reduction in \Ei~has been attributed to the surface kinetics mechanism (simulated using SRIM) where the available energy of the sputtered species (\Esp) leaving the target at \Ei~= 0.5\,keV is the optimum value favoring the growth of defects free homogeneously distributed films. The electronic structure of samples was probed using N K-edge absorption spectroscopy and the information about the crystal field and spin-orbit splitting confirmed TiN phase formation. In essence, through this work, we demonstrate the role of \Esp~and Ti interface in achieving highly dense and smooth TiN thin films with low resistivity without the need of a high temperature or substrate biasing during the thin film deposition process.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Structural and magnetic properties of co-sputtered Fe0.8C0.2 thin films

We studied the structural and magnetic properties of \FeC~thin films deposited by co-sputtering of Fe and C targets in a direct current magnetron sputtering (dcMS) process at a substrate temperature (\Ts) of 300, 523 and 773\,K. The structure and morphology was measured using x-ray diffraction (XRD), x-ray absorption near edge spectroscopy (XANES) at Fe $L$ and C $K$-edges and atomic/magnetic force microscopy (AFM, MFM), respectively. An ultrathin (3\,nm) $^{57}$\FeC~layer, placed between relatively thick \FeC~layers was used to estimate Fe self-diffusion taking place during growth at different \Ts~using depth profiling measurements. Such $^{57}$\FeC~layer was also used for $^{57}$Fe conversion electron Mössbauer spectroscopy (CEMS) and nuclear resonance scattering (NRS) measurements, yielding the magnetic structure of this ultrathin layer. We found from XRD measurements that the structure formed at low \Ts~(300\,K) is analogous to Fe-based amorphous alloy and at high \Ts~(773\,K), pre-dominantly a \tifc~phase has been formed. Interestingly, at an intermediate \Ts~(523\,K), a clear presence of \tefc~(along with \tifc~and Fe) can be seen from the NRS spectra. The microstructure obtained from AFM images was found to be in agreement with XRD results. MFM images also agrees well with NRS results as the presence of multi-magnetic components can be clearly seen in the sample grown at \Ts~= 523\,K. The information about the hybridization between Fe and C, obtained from Fe $L$ and C $K$-edges XANES also supports the results obtained from other measurements. In essence, from this work, experimental realization of \tefc~has been demonstrated. It can be anticipated that by further fine-tuning the deposition conditions, even single phase \tefc~phase can be realized which hitherto remains an experimental challenge.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

GaN Nanowall Network: A new possible route to obtain efficient p-GaN and enhanced light extraction

We demonstrate that GaN formed in a Nanowall Network (NwN) morphology can overcome fundamental limitations in optoelectronic devices, and enable high light extraction and effective Mg incorporation for efficient p-GaN. We report the growth of Mg doped GaN Nanowall network (NwN) by plasma assisted molecular beam epitaxy (PA-MBE) that is characterized by Photoluminescence (PL) spectroscopy, Raman spectroscopy, high-resolution X-ray diffraction (HR-XRD), X-ray photoelectron spectroscopy (XPS) and Secondary ion mass spectroscopy (SIMS). We record a photo-luminescence enhancement ($ \approx $3.2 times) in lightly doped GaN as compared to that of undoped NwN. Two distinct (and broad) blue luminescence peaks appears at 2.95 and 2.7 eV for the heavily doped GaN (Mg $>10^{20}$ atoms $cm^{-3}$), of which the 2.95 eV peak is sensitive to annealing is observed. XPS and SIMS measurements estimate the incorporated Mg concentration to be $10^{20}$ atoms $cm^{-3}$ in GaN NwN morphology, while retaining its band edge emission at $\approx$ 3.4 eV. A higher Mg accumulation towards the GaN/Al$_2$O$_3$ interface as compared to the surface was observed from SIMS measurements.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Effect of Al doping on phase formation and thermal stability of iron nitride thin films

In the present work, we systematically studied the effect of Al doping on the phase formation of iron nitride (Fe-N) thin films. Fe-N thin films with different concentration of Al (Al=0, 2, 3, 6, and 12 at.%) were deposited using dc magnetron sputtering by varying the nitrogen partial pressure between 0 to 100%. The structural and magnetic properties of the films were studied using X-ray diffraction and polarized neutron reflectivity. It was observed that at the lowest doping level (2 at.% of Al), nitrogen rich non-magnetic Fe-N phase gets formed at a lower nitrogen partial pressure as compared to the un-doped sample. Interestingly, we observed that as Al doping is increased beyond 3at.%, nitrogen rich non-magnetic Fe-N phase appears at higher nitrogen partial pressure as compared to un-doped sample. The thermal stability of films were also investigated. Un-doped Fe-N films deposited at 10% nitrogen partial pressure possess poor thermal stability. Doping of Al at 2at.% improves it marginally, whereas, for 3, 6 and 12at.% Al doping, it shows significant improvement. The obtained results have been explained in terms of thermodynamics of Fe-N and Al-N.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Phase formation, thermal stability and magnetic moment of cobalt nitride thin films

Cobalt nitride (Co-N) thin films prepared using a reactive magnetron sputtering process by varying the relative nitrogen gas flow (\pn) are studied in this work. As \pn~increases, Co(N), \tcn, Co$_3$N and CoN phases are formed. An incremental increase in \pn, after emergence of \tcn~phase at \pn=10\p, results in a continuous expansion in the lattice constant ($a$) of \tcn. For \pn=30\p, $a$ maximizes and becomes comparable to its theoretical value. An expansion in $a$ of \tcn, results in an enhancement of magnetic moment, to the extent that it becomes even larger than pure Co. Though such higher (than pure metal) magnetic moment for Fe$_4$N thin films have been theoretically predicted and evidenced experimentally, higher (than pure Co) magnetic moment are evidenced in this work and explained in terms of large-volume high-moment model for tetra metal nitrides.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

The origin of anomalous diffusion in iron mononitride thin films

We have studied the origin of a counter intuitive diffusion behavior of Fe and N atoms in a iron mononitride (FeN) thin film. It was observed that in-spite of a larger atomic size, Fe tend to diffuse more rapidly than smaller N atoms. This only happens in the N-rich region of Fe-N phase diagram, in the N-poor regions, N diffusion coefficient is orders of magnitude larger than Fe. Detailed self-diffusion measurements performed in FeN thin films reveal that the diffusion mechanism of Fe and N is different - Fe atoms diffuse through a complex process, which in addition to a volume diffusion, pre-dominantly controlled by a fast grain boundary diffusion. On the other hand N atoms diffuse through a classical volume-type diffusion process. Observed results have been explained in terms of stronger Fe-N (than Fe-Fe) bonds generally predicted theoretically for mononitride compositions of transition metals.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Effect of dopants on thermal stability and self-diffusion in iron nitride thin films

We studied the effect of dopants (Al, Ti, Zr) on the thermal stability of iron nitride thin films prepared using a dc magnetron sputtering technique. Structure and magnetic characterization of deposited samples reveal that the thermal stability together with soft magnetic properties of iron nitride thin films get significantly improved with doping. To understand the observed results, detailed Fe and N self-diffusion measurements were performed. It was observed that N self-diffusion gets suppressed with Al doping whereas Ti or Zr doping results in somewhat faster N diffusion. On the other hand Fe self-diffusion seems to get suppressed with any dopant of which heat of nitride formation is significantly smaller than that of iron nitride. Importantly, it was observed that N self-diffusion plays only a trivial role, as compared to Fe self-diffusion, in affecting the thermal stability of iron nitride thin films. Based on the obtained results effect of dopants on self-diffusion process is discussed.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Study of magnetic iron nitride thin films deposited by high power impulse magnetron sputtering

In this work, we studied phase formation, structural and magnetic properties of iron-nitride (Fe-N) thin films deposited using high power impulse magnetron sputtering (HiPIMS) and direct current magnetron sputtering (dc-MS). The nitrogen partial pressure during deposition was systematically varied both in HiPIMS and dc-MS. Resulting Fe-N films were characterized for their microstructure, magnetic properties and nitrogen concentration. We found that HiPIMS deposited Fe-N films show a globular nanocrystalline microstructure and improved soft magnetic properties. In addition, it was found that the nitrogen reactivity impedes in HiPIMS as compared to dc-MS. Obtained results can be understood in terms of distinct plasma properties of HiPIMS.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Surfactant enhanced antiferromagnetic coupling in magnetron sputtered Cu/Co multilayers: A neutron reflectivity study

In this work we studied Cu/Co multilayers prepared using dc-magnetron sputtering technique with Ag surfactant. It was found that Ag balances the difference in the surface free energy of Cu and Co and this results in removing the asymmetry in the interface roughness of Cu-on-Co and Co-on-Cu interfaces. As the interfaces become symmetric, we observe a significant enhancement in antiferromagnetic coupling and magneto resistance. Further, a correlation of spin-dependent scattering with the interface roughness is brought by comparing Cu/Co multilayer prepared using different deposition methods. It was found that as interface roughness increases spin-dependent scattering decreases.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Formation of iron nitride thin films with Al and Ti additives

In this work we investigate the process of iron nitride (Fe-N) phase formation using 2 at.% Al or 2 at.% Ti as additives. The samples were prepared with a magnetron sputtering technique using different amount of nitrogen during the deposition process. The nitrogen partial pressure (\pn) was varied between 0-50% (rest Argon) and the targets of pure Fe, [Fe+Ti] and [Fe+Al] were sputtered. The addition of small amount of Ti or Al results in improved soft-magnetic properties when sputtered using \pn $\leq$ 10\p. When \pn is increased to 50\p non-magnetic Fe-N phases are formed. We found that iron mononitride (FeN) phases (N at% $\sim$50) are formed with Al or Ti addition at \pn =50% whereas in absence of such addition \eFeN phases (N\pat$\sim$30) are formed. It was found that the overall nitrogen content can be increased significantly with Al or Ti additions. On the basis of obtained result we propose a mechanism describing formation of Fe-N phases Al and Ti additives.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Surfactant induced smooth and symmetric interfaces in Cu/Co multilayers

In this work we studied Ag surfactant induced growth of Cu/Co multilayers. The Cu/Co multilayers were deposited using Ag surfactant by ion beam sputtering technique. It was found that Ag surfactant balances the asymmetry between the surface free energy of Cu and Co. As a result, the Co-on-Cu and Cu-on-Co interfaces become sharp and symmetric and thereby improve the thermal stability of the multilayer. On the basis of obtained results, a mechanism leading to symmetric and stable interfaces in Cu/Co multilayers is discussed.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Surfactant mediated growth of Ti/Ni multilayers

The surfactant mediated growth of Ti/Ni multilayers is studied. They were prepared using ion beam sputtering at different adatom energies. It was found that the interface roughness decreased significantly when the multilayers were sputtered with Ag as surfactant at an ion energy of 0.75 keV. On the other hand, when the ion energy was increased to 1 keV, it resulted in enhanced intermixing at the interfaces and no appreciable effect of Ag surfactant could be observed. On the basis of the obtained results, the influence of adatom energy on the surfactant mediated growth mechanism is discussed.

0 citations0 reviewsNo code linkedOpen access