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Akhil Tayal

Akhil Tayal appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-sciphysics.app-ph

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Published work

9 published item(s)

preprint2025arXiv

Extending the Growth Temperature-N Concentration Regime Through Pd Doping in Fe4N Thin Films

Fe4N is a well-known anti-perovskite compound exhibiting high magnetization, high chemical stability, low coercivity, high Curie temperature, and high spin-polarization ratio. Therefore, it is a viable candidate for applications in spintronic and magnetic storage devices. However, the Fe4N phase is formed in a narrow substrate temperature (Ts)-N concentration (Nc) regime in the phase diagram of Fe-N. It has been observed that a slight N deficiency will lead to impurity of alpha-Fe, and some N efficiency would result in epsilon-Fe3N phase. Through this work, it has been demonstrated that the doping of Pd can be suitably utilized to extend the Ts-Nc regime for the growth of Fe4N thin films. EXAFS analysis indicate that Pd atoms are substituting corner Fe atoms. Magnetization measurements reveal that the saturation magnetization reduces nominally with Pd doping up to 13 at.%. Therefore, it is foreseen that Pd doping is effective in extending the Fe4N phase formation regime without a significant impact on its structural, electronic, and magnetic properties.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Synthesis and study of ScN thin films

To contemplate an alternative approach for the minimization of diffusion at high temperature depositions, present findings impart viability of room-temperature deposited reactively sputtered ScN thin film samples. The adopted room temperature route endows precise control over the $R_{N_2}$ flow for a methodical structural phase evolution from Sc$\to$ScN and probe the correlated physical aspects of the highly textured ScN samples. In the nitrided regime i.e. at $R_{N_2}$ = 2.5-100% flow, incorporation of unintentional oxygen defects were evidenced from surface sensitive soft x-ray absorption spectroscopy study, though less compared to their metal ($R_{N_2} = 0\%$) and interstitial ($R_{N_2} = 1.6\%$) counterparts, due to higher Gibb's free energy for Sc-O-N formation with no trace of ligand field splitting around the O K-edge spectra. To eradicate the sceptism of appearance of N K-edge (401.6 eV) and Sc L-edge (402.2 eV) absorption spectra adjacent to each other, the nascent Sc K-edge study has been adopted for the first time to validate complementary insight on the metrical parameters of the Sc-N system taken into consideration. Optical bandgaps of the polycrystalline ScN thin film samples were found to vary between 2.25-2.62 eV as obtained from the UV-Vis spectroscopy, whereas, the nano-indentation hardness and modulus of the as-deposited samples lie between 15-34GPa and 152-476GPa, respectively following a linearly increasing trend of resistance to plastic deformations. Besides, contrary to other early 3d transition metal nitrides (TiN, VN, CrN), a comprehensive comparison of noticeably large homogeneity range in Sc-N has been outlined to apprehend the minuscule lattice expansion over the large $R_{N_2}$ realm.

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preprint2020arXiv

Structural, Electronic, and Magnetic Properties of HiPIMS Grown Co-N Thin Films

We studied the growth behavior, structural, electronic, and magnetic properties of cobalt nitride (Co-N) thin films deposited using direct current (dc) and high power impulse magnetron sputtering (HiPIMS) processes. The N$_2$ partial gas flow (\pn) was varied in close intervals to achieve the optimum conditions for the growth of tetra cobalt nitride (\tcn) phase. We found that Co-N films grown using HiPIMS process adopt (111) orientation as compared to the growth taking place along the (100) direction in the dcMS process. It was observed that HiPIMS grown Co-N~films were superior in terms of crystallite size and uniform surface morphology. The local structure of films was investigated using x-ray absorption fine structure (XAFS) measurements. We found that the high energy of adatoms in the HiPIMS technique assisted in the greater stabilization of fcc-Co and novel \tcn~phase relative to the dcMS process. Magnetic properties of Co-N thin films were studied using magneto-optical Kerr effect, vibrating sample magnetometry and polarized neutron reflectivity. It was found that though the saturation magnetization remains almost similar in films grown by dcMS or HiPIMS processes, they differ in terms of their magnetic anisotropy. Such variation can be understood in terms of differences in the growth mechanisms in dcMS and HiPIMS processes affecting the local structure of resulting \tcn~phase.

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preprint2015arXiv

Effect of Al doping on phase formation and thermal stability of iron nitride thin films

In the present work, we systematically studied the effect of Al doping on the phase formation of iron nitride (Fe-N) thin films. Fe-N thin films with different concentration of Al (Al=0, 2, 3, 6, and 12 at.%) were deposited using dc magnetron sputtering by varying the nitrogen partial pressure between 0 to 100%. The structural and magnetic properties of the films were studied using X-ray diffraction and polarized neutron reflectivity. It was observed that at the lowest doping level (2 at.% of Al), nitrogen rich non-magnetic Fe-N phase gets formed at a lower nitrogen partial pressure as compared to the un-doped sample. Interestingly, we observed that as Al doping is increased beyond 3at.%, nitrogen rich non-magnetic Fe-N phase appears at higher nitrogen partial pressure as compared to un-doped sample. The thermal stability of films were also investigated. Un-doped Fe-N films deposited at 10% nitrogen partial pressure possess poor thermal stability. Doping of Al at 2at.% improves it marginally, whereas, for 3, 6 and 12at.% Al doping, it shows significant improvement. The obtained results have been explained in terms of thermodynamics of Fe-N and Al-N.

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preprint2015arXiv

Phase formation, thermal stability and magnetic moment of cobalt nitride thin films

Cobalt nitride (Co-N) thin films prepared using a reactive magnetron sputtering process by varying the relative nitrogen gas flow (\pn) are studied in this work. As \pn~increases, Co(N), \tcn, Co$_3$N and CoN phases are formed. An incremental increase in \pn, after emergence of \tcn~phase at \pn=10\p, results in a continuous expansion in the lattice constant ($a$) of \tcn. For \pn=30\p, $a$ maximizes and becomes comparable to its theoretical value. An expansion in $a$ of \tcn, results in an enhancement of magnetic moment, to the extent that it becomes even larger than pure Co. Though such higher (than pure metal) magnetic moment for Fe$_4$N thin films have been theoretically predicted and evidenced experimentally, higher (than pure Co) magnetic moment are evidenced in this work and explained in terms of large-volume high-moment model for tetra metal nitrides.

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preprint2015arXiv

The origin of anomalous diffusion in iron mononitride thin films

We have studied the origin of a counter intuitive diffusion behavior of Fe and N atoms in a iron mononitride (FeN) thin film. It was observed that in-spite of a larger atomic size, Fe tend to diffuse more rapidly than smaller N atoms. This only happens in the N-rich region of Fe-N phase diagram, in the N-poor regions, N diffusion coefficient is orders of magnitude larger than Fe. Detailed self-diffusion measurements performed in FeN thin films reveal that the diffusion mechanism of Fe and N is different - Fe atoms diffuse through a complex process, which in addition to a volume diffusion, pre-dominantly controlled by a fast grain boundary diffusion. On the other hand N atoms diffuse through a classical volume-type diffusion process. Observed results have been explained in terms of stronger Fe-N (than Fe-Fe) bonds generally predicted theoretically for mononitride compositions of transition metals.

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preprint2014arXiv

Effect of dopants on thermal stability and self-diffusion in iron nitride thin films

We studied the effect of dopants (Al, Ti, Zr) on the thermal stability of iron nitride thin films prepared using a dc magnetron sputtering technique. Structure and magnetic characterization of deposited samples reveal that the thermal stability together with soft magnetic properties of iron nitride thin films get significantly improved with doping. To understand the observed results, detailed Fe and N self-diffusion measurements were performed. It was observed that N self-diffusion gets suppressed with Al doping whereas Ti or Zr doping results in somewhat faster N diffusion. On the other hand Fe self-diffusion seems to get suppressed with any dopant of which heat of nitride formation is significantly smaller than that of iron nitride. Importantly, it was observed that N self-diffusion plays only a trivial role, as compared to Fe self-diffusion, in affecting the thermal stability of iron nitride thin films. Based on the obtained results effect of dopants on self-diffusion process is discussed.

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preprint2014arXiv

Study of magnetic iron nitride thin films deposited by high power impulse magnetron sputtering

In this work, we studied phase formation, structural and magnetic properties of iron-nitride (Fe-N) thin films deposited using high power impulse magnetron sputtering (HiPIMS) and direct current magnetron sputtering (dc-MS). The nitrogen partial pressure during deposition was systematically varied both in HiPIMS and dc-MS. Resulting Fe-N films were characterized for their microstructure, magnetic properties and nitrogen concentration. We found that HiPIMS deposited Fe-N films show a globular nanocrystalline microstructure and improved soft magnetic properties. In addition, it was found that the nitrogen reactivity impedes in HiPIMS as compared to dc-MS. Obtained results can be understood in terms of distinct plasma properties of HiPIMS.

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preprint2011arXiv

Formation of iron nitride thin films with Al and Ti additives

In this work we investigate the process of iron nitride (Fe-N) phase formation using 2 at.% Al or 2 at.% Ti as additives. The samples were prepared with a magnetron sputtering technique using different amount of nitrogen during the deposition process. The nitrogen partial pressure (\pn) was varied between 0-50% (rest Argon) and the targets of pure Fe, [Fe+Ti] and [Fe+Al] were sputtered. The addition of small amount of Ti or Al results in improved soft-magnetic properties when sputtered using \pn $\leq$ 10\p. When \pn is increased to 50\p non-magnetic Fe-N phases are formed. We found that iron mononitride (FeN) phases (N at% $\sim$50) are formed with Al or Ti addition at \pn =50% whereas in absence of such addition \eFeN phases (N\pat$\sim$30) are formed. It was found that the overall nitrogen content can be increased significantly with Al or Ti additions. On the basis of obtained result we propose a mechanism describing formation of Fe-N phases Al and Ti additives.

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