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Researcher profile

Mrinal Dutta

Mrinal Dutta contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallphysics.app-phphysics.optics

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Published work

3 published item(s)

preprint2022arXiv

Lithography free method to synthesize the ultra-low reflection inverted-pyramid arrays for ultra-thin silicon solar cell

Silicon inverted pyramids arrays have been suggested as one of the most promising structure for high-efficient ultrathin solar cells due to their ability of superior light absorption and low enhancement of surface area. However, the existing techniques for such fabrication are either expensive or not able to create appropriate structure. Here, we present a lithography free method for the fabrication of inverted pyramid arrays by using a modified metal assisted chemical etching (MACE) method. The size and inter-inverted pyramids spacing can also be controlled through this method. We used an isotropic chemical etching technique for this process to control the angle of etching, which leads to ultra-low reflection, even < 0.5%, of this nanostructure. Using this specification, we have predicted the expected solar cell parameters, which exceeds the Lambertian limit. This report provides a new pathway to improve the efficiency of the ultrathin silicon solar cells at lower cost.

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preprint2022arXiv

Lithography Free Process for the Fabrication of Periodic Silicon Micro/Nano-Wire Arrays and Its Light-trapping Properties

Vertically aligned silicon micro/nanowire arrays of different sizes have been synthesized by combining the modified metal-assisted chemical etching (MACE) and reactive ion etching (RIE) methods. This is a novel lithography-free method to fabricate silicon micro/nanowire arrays. The size of micro/nanowire arrays is controlled by controlling the etching rate and diameter of silica particles. The silicon micro/nanowire geometry can utilize for efficient collection of photo-generated charge carriers from impure silicon wafers, which have a short minority carrier diffusion length also act as a self-antireflection coating layer. For micro/nanowire having average diameters of 40 nm, 330 nm and 950 nm and their corresponding average length 1.12 micron, 1.1 micron, and 1 micron, respectively, the observed average reflectance was 0.22, 0.6 and 0.33 percent at 45-degree incident angle, while the average reflectance was increased up to 4.2, 9.2, and 11 percent, respectively at 75-degree incident angle in the broad range of 300 - 1200 nm of the solar spectrum. The measured average reflectance for these samples is quite low compared to the planar silicon wafer. Thus this geometry is a promising candidate for fabricating low-cost and highly efficient radial junction silicon micro/nanowire arrays based solar cells.

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preprint2019arXiv

Performance limitation of Si Nanowire solar cells: Effects of nanowire length and surface defects

In Si nanowire (SiNW) solar cells enhanced light confinement property in addition to decoupling of charge carrier collection and light absorption directions plays a significant role to resolve the draw backs of bulk Si solar cells. In this report we have studied the dependence of the phovoltaic properties of Si NW array solar cells on the SiNW length and enhanced surface defect states as a result of enhanced surface area of the NWs. The SiNW arrays have been fabricated using metal catalyzed electroless etching (MCEE) technique. p-n junction has been produced by spin-on-dopant technique followed by thermal diffusion process. Front and rear electrodes have been deposited by e-beam evaporation techniques. SiNW lengths have been controlled from ~ 320 nm to 6.4 micro meter by controlling the parameters of MCEE technique. Photovoltaic properties of the solar cells have been characterized by measuring quantum efficiency and photocurrent density vs. voltage characteristics. Morphological studies have been carried out by using scanning electron microscopy. Reduction in light trapping capability comes at the benefit of reduced surface defects. The reduction of surface defects has been proved to be more advantageous in comparison to the decrement of light trapping capability. The major contribution to the changes in cell efficiency comes from the enhancement of short circuit current density with a very weak dependence on open circuit voltage. This work is beneficial for the production commercial Si solar cell where SiNW arrays could be used as a antireflection coating instead of using separate antireflection layers and thus could reduced the production cost.

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