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Mourad Benamara

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2 published item(s)

preprint2026arXiv

Chemical Vapor Deposition Growth and Characterization of ReSe2

Two-dimensional (2D) flakes of ReSe2 structure were grown by chemical vapor deposition and investigated at room temperature using Raman, photoluminescence, and absorption spectroscopies. The Raman spectra revealed eighteen phonon modes in the range of 100-300 cm-1 that were found in good agreement with the density functional theory (DFT) calculations. The thickness profiles of the ReSe2 flakes are in the range of 5-50 nm. The ReSe2 crystal structure and morphology were investigated using XRD, atomic force microscopy and scanning electron microscopy. The energy dispersion spectroscopy confirmed the 1:2 elemental composition. The absorption spectra were obtained for ReSe2 flakes and found to exhibit excitonic peaks in the spectral region of 885 - 942 nm. These peaks are used to define the band gap of the material. The DFT calculations predicted an indirect bandgap of 0.88 eV for the bulk structure, while a direct bandgap of 1.26 eV was predicted for the monolayer.

preprint2013arXiv

Molecular Beam Epitaxial Growth of Bi2Te3 and Sb2Te3 Topological Insulators on GaAs (111) Substrates: A Potential Route to Fabricate Topological Insulator p-n Junction

High quality Bi2Te3 and Sb2Te3 topological insulators films were epitaxially grown on GaAs (111) substrate using solid source molecular beam epitaxy. Their growth and behavior on both vicinal and non-vicinal GaAs (111) substrates were investigated by reflection high-energy electron diffraction, atomic force microscopy, x-ray diffraction, and high resolution transmission electron microscopy. It is found that non-vicinal GaAs (111) substrate is better than a vicinal substrate to provide high quality Bi2Te3 and Sb2Te3 films. Hall and magnetoresistance measurements indicate that p type Sb2Te3 and n type Bi2Te3 topological insulator films can be directly grown on a GaAs (111) substrate, which may pave a way to fabricate topological insulator p-n junction on the same substrate, compatible with the fabrication process of present semiconductor optoelectronic devices.