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Bothina Hamad

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Published work

6 published item(s)

preprint2026arXiv

Chemical Vapor Deposition Growth and Characterization of ReSe2

Two-dimensional (2D) flakes of ReSe2 structure were grown by chemical vapor deposition and investigated at room temperature using Raman, photoluminescence, and absorption spectroscopies. The Raman spectra revealed eighteen phonon modes in the range of 100-300 cm-1 that were found in good agreement with the density functional theory (DFT) calculations. The thickness profiles of the ReSe2 flakes are in the range of 5-50 nm. The ReSe2 crystal structure and morphology were investigated using XRD, atomic force microscopy and scanning electron microscopy. The energy dispersion spectroscopy confirmed the 1:2 elemental composition. The absorption spectra were obtained for ReSe2 flakes and found to exhibit excitonic peaks in the spectral region of 885 - 942 nm. These peaks are used to define the band gap of the material. The DFT calculations predicted an indirect bandgap of 0.88 eV for the bulk structure, while a direct bandgap of 1.26 eV was predicted for the monolayer.

preprint2022arXiv

Anharmonic effects on lattice dynamics and thermal transport of two-dimensional InTe Monolayer

The lattice thermal conductivity plays a key role in the performance of thermoelectric materials, where the lower values lead to a higher figure of merit values. Two-dimensional group III-VI monolayers such as InTe are promising materials for TE energy generation owing to their low that leads to high TE figure of merit values. In this work, we investigate the influence of the lattice anharmonicity on the lattice thermal conductivity of the InTe monolayer. The thermodynamic parameters are calculated by using the self-consistent phonon theory. The lattice thermal conductivity value of the InTe monolayer is obtained to be 0.30 by using the standard Boltzmann transport equation (BTE) approach, while it is 3.58 by using SCP + BTE approach. These results confirm the importance of the anharmonic effects on the lattice thermal conductivity value, where it was found to be significantly higher (91%) using the SCP + BTE approach than that obtained using the standard BTE approach.

preprint2022arXiv

Lattice Dynamics, Mechanical Properties, Electronic Structure and Magnetic Properties of Equiatomic Quaternary Heusler Alloys CrTiCoZ (Z =Al,Si) using first principles calculations

First principles calculations are performed to investigate the thermodynamical stability, dynamical, mechanical, electronic and magnetic properties of CrTiCoZ (Z= Al/Si) novel quaternary Heusler alloys. Y-type III atomic configuration is found to be the most stable structure for both compounds. The melting temperatures of both compounds are as high as 2142 K and 2420 K for CrTiCoAl and CrTiCoSi, respectively. The electronic structure calculations using GGA-PBE approach show a half metallic behavior of CrTiCoAl. The spin-down channel exhibits a direct band gap of 0.15 eV, whereas the spin-up channel is metallic making CrTiCoAl a half metallic ferromagnet with 100% spin polarization and an appreciable magnetic moment of -2 Bohr Magnetons. The Curie temperature of CrTiCoAl is well above the room temperature (385K), whereas that of CrTiCoSi is below the room temperature (203K).

preprint2020arXiv

Effect of the polar distortion on the thermoelectric properties of GeTe

First principle calculations are performed to investigate the effect of polar order strength on the thermoelectric (TE) properties of GeTe alloy in its rhombohedral structure. The variation in the polarization state using various ferroelectric distortions λ (λ=0,0.5,1.0,1.25,1.5) allows to change the thermoelectric properties to a large extent. The polar structure with a high polarization mode (λ=1.5) tends to show a higher TE efficiency than the cubic structure at high temperatures. Thus, polarization engineering may play a key role in designing efficient thermoelectric devices. In particular, high TE performances could be achieved by growing epitaxial GeTe films that bi-axially compress the directions perpendicular to the polar axis, which may help to tune the Curie temperature.

preprint2020arXiv

Thermal conductivity and enhanced thermoelectric performance of SnTe bilayer

Tin chalcogenides (SnS, SnSe, and SnTe) are found to have improved thermoelectric properties upon the reduction of their dimensionality. Here we found the tilted AA + s stacked two-dimensional (2D) SnTe bilayer as the most stable phase among several stackings as predicted by the structural optimization and phonon transport properties. The carrier mobility and relaxation time are evaluated using the deformation potential theory, which is found to be relatively high due to the high 2D elastic modulus, low deformation potential constant, and moderate effective masses. The SnTe bilayer shows a high Seebeck coefficient, high electrical conductivity, and ultralow lattice thermal conductivity. High TE figure of merit (ZT) values, as high as 4.61 along the zigzag direction, are predicted for the SnTe bilayer. These ZT values are much enhanced as compared to the bulk as well as monolayer SnTe and other 2D compounds.

preprint2019arXiv

Thermodynamic and Thermoelectric Properties of CoFeYGe (Y= Ti, Cr) Quaternary Heusler Alloys: First Principle Calculations

Utilizing a material in thermoelectric applications requires a mechanical, thermal, and lattice stability as well a high figure of merit (ZT). In this work, we present the structural, electronic, magnetic, mechanical, thermodynamic, dynamic, and thermoelectric properties of CoFeYGe (Y = Ti, Cr) quaternary Heusler compounds using the density functional theory (DFT). The calculated mechanical properties and phonon dispersions reveal that the structures of these compounds are stable. Both CoFeCrGe and CoFeTiGe compounds show a ferromagnetic and ferrimagnetic half-metallic behavior with band gaps of 0.41 and 0.38 eV, respectively. The lattice thermal conductivity (\k{appa}L) exhibits low values that reach 3.01 W/(m.K) (3.47 W/(m.K)) for CoFeCrGe (CoFeTiGe) at 1100 K. The optical phonon modes have a large contribution of 60.2% (70.9 %) to \k{appa}L value for CoFeCrGe (CoFeTiGe). High ZT values of 0.71 and 0.65 were obtained for CoFeCrGe and CoFeTiGe, respectively. Based on our calculations, CoFeCrGe and CoFeTiGe combine both good spintronic and thermoelectric behaviors that may be used in spin injection applications.