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Motoaki Hirayama

Motoaki Hirayama contributes to research discovery and scholarly infrastructure.

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Published work

15 published item(s)

preprint2022arXiv

$\textit{Ab initio}$ downfolding based on the GW approximation for infinite-layer nickelates

We derive an effective three-orbital model for the infinite-layer nickelates based on the band structure obtained by the GW approximation (GWA), where we consider the Ni 3$d_{x^2-y^2}$ and O 2$p$ orbitals forming the $σ$-bond. In the GWA, the self-energy correction to the local density approximation (LDA) increases the energy difference between Ni $3d_{x^2-y^2}$ and O $2p$, which reduces the bandwidth of the antibonding 3$d_{x^2-y^2}$ orbitals. The isolation of the Ni $3d_{x^2-y^2}$ around the Fermi level suppresses the screening effect. As a result, the correlation effect becomes more significant than that in the model constructed by the LDA-based downfolding. Furthermore, the Mott-Hubbard type character is enhanced in the GWA-based effective model, because the charge-transfer energy increases more rapidly compared to the increase in the interaction parameters.

preprint2022arXiv

$Ab$ $initio$ material design of Ag-based oxides for high-$T_c$ superconductor

We propose silver-based oxides with layered perovskite structure as candidates of exhibiting intriguing feature of strongly correlated electrons. The compounds show unique covalence between Ag d and O p orbitals with the strong electron correlation of their antibonding orbital similar to the copper oxide high-temperature superconductors, but stronger covalency and slightly smaller correlation strength. We examine $A_2$AgO$_2X_2$ with $A$ =Sr and Ba and $X$ =F, I and Cl in detail. Among them, Sr$_2$AgO$_2$F$_2$ has the largest effective onsite Coulomb repulsion and shows an antiferromagnetic insulating ground state, which competes with correlated metals. It offers features both similar and distinct from the copper oxides, and paves a new route. The possibility of superconductivity in doped systems is discussed.

preprint2022arXiv

Quantum spin Hall effect from multi-scale band inversion in twisted bilayer Bi$_2$(Te$_{1-x}$Se$_x$)$_3$

Moiré materials have become one of the most active fields in material science in recent years due to their high tunability, and their unique properties emerge from the Moiré-scale structure modulation. Here, we propose twisted bilayer Bi$_2$(Te$_{1-x}$Se$_x$)$_3$ as a new Moiré material where the Moiré-scale modulation induces a topological phase transition. We show, in twisted bilayer Bi$_2$(Te$_{1-x}$Se$_x$)$_3$, a topological insulator domain and a normal insulator domain coexist in the Moiré lattice structure, and edge states on the domain boundary make nearly flat bands that dominate the material properties. The edge states further contribute to a Moiré-scale band inversion, resulting in Moiré-scale topological states. There are corresponding Moiré-scale edge states and they are so to speak "edge state from edge state", which is a unique feature of twisted bilayer Bi$_2$(Te$_{1-x}$Se$_x$)$_3$. Our result not only proposes novel quantum phases in twisted bilayer Bi$_2$Te$_3$-family, but also suggests the twisting of stacking sensitive topological materials paves an avenue in the search for novel quantum materials and devices.

preprint2021arXiv

Material design with the van der Waals stacking of bismuth-halide chains realizing a higher-order topological insulator

The van der Waals (vdW) materials with low dimensions have been extensively studied as a platform to generate exotic quantum properties. Advancing this view, a great deal of attention is currently paid to topological quantum materials with vdW structures. Here, we provide a new concept of designing topological materials by the vdW stacking of quantum spin Hall insulators (QSHIs). Most interestingly, a slight shift of inversion center in the unit cell caused by a modification of stacking is found to induce the topological variation from a trivial insulator to a higher-order topological insulator (HOTI). Based on that, we present the first experimental realization of a HOTI by investigating a bismuth bromide Bi4Br4 with angle-resolved photoemission spectroscopy (ARPES). The unique feature in bismuth halides capable of selecting various topology only by differently stacking chains, combined with the great advantage of the vdW structure, offers a fascinating playground for engineering topologically non-trivial edge-states toward future spintronics applications.

preprint2020arXiv

Anomalous dielectric response in insulators with the pi Zak phase

In various topological phases, nontrivial states appear at the boundaries of the system. In this paper, we investigate anomalous dielectric response caused by such states caused by the pi Zak phase. First, by using the one-dimensional Su-Schrieffer-Heeger model, we show that, when the system is insulating and the Zak phase is pi, the polarization suddenly rises to a large value close to e/2, by application of an external electric field. The pi Zak phase indicates existence of half-filled edge states, and we attribute this phenomenon to charge transfer between the edge states at the two ends of the system. We extend this idea to two- and three-dimensional insulators with the pi Zak phase over the Brillouin zone, and find similar anomalous dielectric response. We also show that diamond and silicon slabs with (111) surfaces have the pi Zak phase by ab intio calculations, and show that this anomalous response survives even surface reconstruction involving an odd number of original surface unit cells. Another material example with an anomalous dielectric response is polytetrafluoroethylene (PTFE), showing plateaus of polarization at +e by ab initio calculation, in agreement with our theory.

preprint2020arXiv

Materials design of dynamically stable $d^9$ layered nickelates

Motivated by the recent discovery of superconductivity in the Sr-doped layered nickelate NdNiO$_2$, we perform a systematic computational materials design of layered nickelates that are dynamically stable and whose electronic structure better mimics the electronic structure of high-$T_c$ cuprates than NdNiO$_2$. While the Ni $3d$ orbitals are self-doped from the $d^9$ configuration in NdNiO$_2$ and the Nd-layer states form Fermi pockets, we find more than 10 promising compounds for which the self-doping is almost or even completely suppressed. We derive effective single-band models for those materials and find that they are in the strongly-correlated regime. We also investigate the possibility of palladate analogues of high-$T_c$ cuprates. Once synthesized, these nickelates and palladates will provide a firm ground for studying superconductivity in the Mott-Hubbard regime of the Zaanen-Sawatzky-Allen classification.

preprint2020arXiv

Vortex bound state of Kondo lattice coupled to compensated metal

We theoretically study physical properties of the low-energy quasiparticle excitations at the vortex core in the full-gap superconducting state of the Kondo lattice coupled to compensated metals. Based on the mean-field description of the superconducting state, we numerically solve the Bogoliubov-de Gennes (BdG) equations for the tight-binding Hamiltonian. The isolated vortex is characterized by a length scale independent of the magnitude of the interaction and the energy level of the core bound state is the same order as the bulk gap. These properties are in strong contrast to the conventional s-wave superconductor. To gain further insights, we also consider the effective Hamiltonian in the continuous limit and construct the theoretical framework of the quasiclassical Green's function of conduction electrons. With the use of the Kramer-Pesch approximation, we analytically derive the spectral function describing the quasiparticle excitations which is consistent with the numerics. It has been revealed that the properties of the vortex bound state are closely connected to the characteristic odd frequency dependence of both the normal and anomalous self-energies which is proportional to the inverse of frequency.

preprint2019arXiv

Ab Initio Study on Superconductivity and Inhomogeneity in Hg-based Cuprate Superconductor

Understanding physics of high-$T_c$ cuprate superconductors remains one of the important problems in materials science. Though a number of diverse theories argue about the superconductivity and competing orders, ab initio and quantitative understanding is lacking. Here, we reproduce the experimental phase diagram of HgBa$_2$CuO$_{4+y}$ by solving its ab initio low-energy effective Hamiltonian without adjustable parameters. It shows a superconducting phase in a wide range of hole density $δ$, and its competition with charge period-4 plus spin period-8 stripe order near $δ\sim 0.1$, in agreement with experimental results including recent X-ray scattering. Then a crucial role of off-site interactions in stabilizing the superconductivity is elucidated with emphasis on charge fluctuations. It also clarifies the condensation energy mainly contributed from the onsite Coulomb interaction. The present achievement will enable deeper, predictable understanding on open issues of the high-$T_c$ superconducting mechanism and promote ab initio studies on strongly correlated electrons beyond parametrized model studies.

preprint2019arXiv

Pressure-induced topological phase transition in noncentrosymmetric elemental Tellurium

Recent progress in understanding the electronic band topology and emergent topological properties encourage us to reconsider the band structure of well-known materials including elemental substances. Controlling such a band topology by external field is of particular interest from both fundamental and technological view point. Here we report the pressure-induced topological phase transition from a semiconductor to a Weyl semimetal in elemental tellurium probed by transport measurements. Pressure variation of the periods of Shubnikov-de Haas oscillations, as well as oscillations phases, shows an anomaly around the pressure theoretically predicted for topological phase transition. This behavior can be well understood by the pressure-induced band deformation and resultant band crossing effect. Moreover, effective cyclotron mass is reduced toward the critical pressure, potentially reflecting the emergence of massless linear dispersion. The present result paves the way for studying the electronic band topology in well-known compounds and topological phase transition by the external field.

preprint2018arXiv

Topological semimetals studied by ab initio calculations

In topological semimetals such as Weyl, Dirac, and nodal-line semimetals, the band gap closes at points or along lines in k space which are not necessarily located at high-symmetry positions in the Brillouin zone. Therefore, it is not straightforward to find these topological semimetals by ab initio calculations because the band structure is usually calculated only along high-symmetry lines. In this paper, we review recent studies on topological semimetals by ab initio calculations. We explain theoretical frameworks which can be used for the search for topological semimetal materials, and some numerical methods used in the ab initio calculations.

preprint2015arXiv

Ab initio Studies of Magnetism in the Iron Chalcogenides FeTe and FeSe

The iron chalcogenides FeTe and FeSe belong to the family of iron-based superconductors. We study the magnetism in these compounds in the normal state using the ab initio downfolding scheme developed for strongly correlated electron systems. In deriving ab initio low-energy effective models, we employ the constrained GW method to eliminate the double counting of electron correlations originating from the exchange correlations already taken into account in the density functional theory. By solving the derived ab initio effective models, we reveal that the elimination of the double counting is important in reproducing the bicollinear antiferromagnetic order in FeTe, as is observed in experiments. We also show that the elimination of the double counting induces a unique degeneracy of several magnetic orders in FeSe, which may explain the absence of the magnetic ordering. We discuss the relationship between the degeneracy and the recently found puzzling phenomena in FeSe as well as the magnetic ordering found under pressure.

preprint2015arXiv

Weyl Node and Spin Texture in Trigonal Tellurium and Selenium

We study Weyl nodes in materials with broken inversion symmetry. We find based on first-principles calculations that trigonal Te and Se have multiple Weyl nodes near the Fermi level. The conduction bands have a spin splitting similar to the Rashba splitting around the H points, but unlike the Rashba splitting the spin directions are radial, forming a hedgehog spin texture around the H points, with a nonzero Pontryagin index for each spin-split conduction band. The Weyl semimetal phase, which has never been observed in real materials without inversion symmetry, is realized under pressure. The evolution of the spin texture by varying the pressure can be explained by the evolution of the Weyl nodes in k space.

preprint2012arXiv

Ab-initio Low-Energy Model of Transition-Metal-Oxide Heterostructure LaAlO3/SrTiO3

We develop the multi-scale ab-initio scheme for correlated electrons (MACE) for transitionmetal-oxide heterostructures, and determine the parameters of the low-energy effective model. By separating Ti t2g bands near the Fermi level from the global Kohn-Sham (KS) bands of LaAlO3/SrTiO3 which are highly entangled with each other, we are able to calculate the parameters of the low-energy effective model of the interface with the help of constrained random phase approximation (cRPA). The on-site energies of the Ti t2g orbitals in the 1stlayer is about 650 meV lower than those in the 2nd-layer. In the 1st-layer, the transfer integral of the Ti t2g orbital is nearly the same as that of the bulk SrTiO3, while the effective screened Coulomb interaction becomes about 10 percent larger than that of the bulk SrTiO3. The differences of the parameters from the bulk SrTiO3 reduce rapidly with increasing distance from the interface. Our present versatile method makes it possible to derive effective ab-initio low-energy models and allows studying interfaces of strongly correlated electron systems from first principles.

preprint2012arXiv

Derivation of Static Low-Energy Effective Models by ab initio Downfolding Method without Double Counting of Coulomb Correlations: Application to SrVO3, FeSe and FeTe

Derivation of low-energy effective models by a partial trace summation of the electronic degrees of freedom far away from the Fermi level, called downfolding, is reexamined. We propose an improved formalism free from the double-counting of electron correlation in the low-energy degrees of freedom. In this approach, the exchange-correlation energy in the local density approximation (LDA) is replaced with the constrained self-energy corrections defined by the sum of the contribution from eliminated high-energy degrees of freedom, Sigma H and that from the frequency-dependent part of the partially screened interaction, Delta Sigma L. We apply the formalism to SrVO3 as well as to two iron-based superconductors, FeSe and FeTe. The resultant bandwidths of the effective models are nearly the same as those of the previous downfolding formalism because of striking cancellations of Sigma H and Delta Sigma L. In SrVO3, the resultant bandwidth of the effective low-energy model is 2.56 eV (in comparison to LDA: 2.58 eV, full GW approximation: 2.19 eV). However, in the non-degenerate multi-band materials such as FeSe and FeTe, the momentum dependent self-energy effects yield substantial modifications of the band structures and relative shifts of orbital-energy levels of the effective models. The FeSe model indicates a substantial downward shift of the x2-y2 orbital level, which may lead to an increase in the filling of the x2-y2 orbital above half filling. It suggests a destruction of the orbital selective Mott phase of the x2-y2 orbital in agreement with the experimental absence of the antiferromagnetic phase.

preprint2009arXiv

Systematic Control of Carrier Doping without Disorder at Interface of Oxide Heterostructures

We propose a method to systematically control carrier densities at the interface of transition-metal oxide heterostructures without introducing disorders. By inserting non-polar layers sandwiched by polar layers, continuous carrier doping into the interface can be realized. This method enables us to control the total carrier densities per unit cell systematically up to high values of the order unity.