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Morteza Kayyalha

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cond-mat.mes-hall cond-mat.mtrl-sci cond-mat.supr-con

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preprint2019arXiv

Highly skewed current-phase relation in superconductor-topological insulator-superconductor Josephson junctions

Three-dimensional topological insulators (TI's) in proximity with superconductors are expected to exhibit exotic phenomena such as topological superconductivity (TSC) and Majorana bound states (MBS), which may have applications in topological quantum computation. In superconductor-TI-superconductor Josephson junctions, the supercurrent versus the phase difference between the superconductors, referred to as the current-phase relation (CPR), reveals important information including the nature of the superconducting transport. Here, we study the induced superconductivity in gate-tunable Josephson junctions (JJs) made from topological insulator BiSbTeSe2 with superconducting Nb electrodes. We observe highly skewed (non-sinusoidal) CPR in these junctions. The critical current, or the magnitude of the CPR, increases with decreasing temperature down to the lowest accessible temperature (T ~ 20 mK), revealing the existence of low-energy modes in our junctions. The gate dependence shows that close to the Dirac point the CPR becomes less skewed, indicating the transport is more diffusive, most likely due to the presence of electron/hole puddles and charge inhomogeneity. Our experiments provide strong evidence that superconductivity is induced in the highly ballistic topological surface states (TSS) in our gate-tunable TI- based JJs. Furthermore, the measured CPR is in good agreement with the prediction of a model which calculates the phase dependent eigenstate energies in our system, considering the finite width of the electrodes as well as the TSS wave functions extending over the entire circumference of the TI.

preprint2019arXiv

Non-Majorana Origin of the Half-Quantized Conductance Plateau in Quantum Anomalous Hall Insulator and Superconductor Hybrid Structures

A quantum anomalous Hall (QAH) insulator coupled to an s-wave superconductor is predicted to harbor a topological superconducting phase, the elementary excitations of which (i.e. Majorana fermions) can form topological qubits upon non-Abelian braiding operations. A recent transport experiment interprets the half-quantized two-terminal conductance plateau as the presence of chiral Majorana fermions in a millimeter-size QAH-Nb hybrid structure. However, there are concerns about this interpretation because non-Majorana mechanisms can also generate similar signatures, especially in a disordered QAH system. Here, we fabricated QAH-Nb hybrid structures and studied the QAH-Nb contact transparency and its effect on the corresponding two-terminal conductance. When the QAH film is tuned to the metallic regime by electric gating, we observed a sharp zero-bias enhancement in the differential conductance, up to 80% at zero magnetic field. This large enhancement suggests high probability of Andreev reflection and transparent interface between the magnetic topological insulator (TI) and Nb layers. When the magnetic TI film is in the QAH state with well-aligned magnetization, we found that the two-terminal conductance is always half-quantized. Our experiment provides a comprehensive understanding of the superconducting proximity effect observed in QAH-superconductor hybrid structures and shows that the half-quantized conductance plateau is unlikely to be induced by chiral Majorana fermions.

preprint2016arXiv

Gate-Tunable and Thickness-dependent Electronic and Thermoelectric Transport in few-layer MoS2

Over the past few years, there has been a growing interest in layered transition metal dichalcogenides (TMD) such as molybdenum disulfide (MoS2). Most studies so far have focused on the electronic and optoelectronic properties of single-layer MoS2, whose band structure features a direct bandgap, in sharp contrast to the indirect bandgap of thicker MoS2. In this paper, we present a systematic study of the thickness-dependent electrical and thermoelectric properties of few-layer MoS2. We observe that the electrical conductivity () increases as we reduce the thickness of MoS2 and peaks at about two layers, with six-time larger conductivity than our thickest sample (23-layer MoS2). Using a back-gate voltage, we modulate the Fermi energy () of the sample where an increase in the Seebeck coefficient () is observed with decreasing gate voltage () towards the subthreshold (OFF state) of the device, reaching as large as in a four-layer MoS2. While previous reports have focused on a single-layer MoS2 and measured Seebeck coefficient in the OFF state, which has vanishing electrical conductivity and thermoelectric power factor (), we show that MoS2-based devices in their ON state can have as large as in the two-layer sample. The increases with decreasing thickness then drops abruptly from double-layer to single-layer MoS2, a feature we suggest as due to a change in the energy dependence of the electron mean-free-path according to our theoretical calculation. Moreover, we show that care must be taken in thermoelectric measurements in the OFF state to avoid obtaining erroneously large Seebeck coefficients when the channel resistance is very high. Our study paves the way towards a more comprehensive examination of the thermoelectric performance of two-dimensional (2D) semiconductors.

preprint2015arXiv

Observation of reduced 1/f noise in Graphene field effect transistors on Boron Nitride substrates

We have investigated the low frequency (f) flicker (also called 1/f) noise of single-layer graphene devices on h-BN (placed on SiO2/Si) along with those on SiO2/Si. We observe that the devices fabricated on h-BN have on average one order of magnitude lower noise amplitude compared with devices fabricated on SiO2/Si. We associate this noise reduction to the lower densities of impurities and trap sites in h-BN than in SiO2. Furthermore, the gate voltage dependent noise amplitude shows a broad maximum at Dirac point for devices on h-BN, in contrast to the M-shaped behavior showing a minimum at Dirac point for devices on SiO2, consistent with the reduced charge inhomogeneity (puddles) for graphene on h-BN. This study demonstrates that the use of h-BN as a substrate or dielectric can be a simple and efficient noise reduction technique valuable for electronic applications of graphene and other nanomaterials.