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Mona Zebarjadi

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cond-mat.mtrl-sci physics.class-ph

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preprint2022arXiv

Effect of Electron-Phonon Interaction and Ionized Impurity Scattering on the Room Temperature Thermoelectric Properties of Bulk $MoSe_2$

We study the thermoelectric properties of bulk $MoSe_2$ within relaxation time approximation including electron-phonon and ionized impurity interactions using first-principles calculations at room temperatures. The anisotropy of this two-dimensional layered metal dichalcogenide is studied by calculations of electron mobility in the cross-plane and the in-plane directions. We show that the cross-plane mobility is two orders of magnitude smaller than the in-plane one. The inclusion of van der Waals interactions further lowers the carrier mobility in the cross-plane direction but minimally affects the in-plane one. The results for in-plane electrical mobility and conductivity are in close agreement with experimentally reported values indicating the accuracy of the calculations. The Seebeck coefficient calculations show that this coefficient is primarily dictated by the band structure. The details of relaxation times and inclusion of van der Waals interactions only slightly change the Seebeck coefficient. The in-plane thermoelectric power factor reaches a maximum value of 20 $μWcm^{-1}K^{-2}$ at a carrier concentration of $1.5x10^{20}$ $cm^{-3}$ at 300K.

preprint2020arXiv

The physical and mechanical properties of hafnium orthosilicate: experiments and first-principles calculations

Hafnium orthosilicate (HfSiO4: hafnon) has been proposed as an environmental barrier coating (EBC) material to protect silicon coated, silicon-based ceramic materials at high temperatures and as a candidate dielectric material in microelectronic devices. It can naturally form at the interface between silicon dioxide (SiO2) and hafnia (HfO2). When used in these applications, its coefficient of thermal expansion (CTE) should match that of silicon and SiC composites to reduce the stored elastic strain energy, and thus risk of failure of these systems. The physical, mechanical, thermodynamic and thermal transport properties of hafnon have been investigated using a combination of both density functional theory (DFT) calculations and experimental assessments. The average linear coefficient of thermal expansion (CTE) calculated using the quasi-harmonic approximation increase from 3.06 10-6 K-1 to 6.36 10-6 K-1, as the temperature increases from 300 to 1500 K, in agreement with both X-ray diffraction lattice parameter and dilatometry measurements. The predicted thermal conductivity from Boltzmann transport theory was approximately 18 W/m.K at 300K. Both hot disk and laser flash measurements gave a thermal conductivity of 13.3 W/m.K. This slightly lower value is indicative of residual disorder in the experimental samples that was absent in the theoretical analysis. First-principles calculations and nanoindentation techniques were used to assess the ambient temperature elastic constants and bulk modulus respectively. The elastic properties obtained by both approaches agreed to within 5% validating the computational approach and its future use for study of the thermomechanical properties of other oxides or silicates.

preprint2020arXiv

Ultra-high lattice thermal conductivity and the effect of pressure in superhard hexagonal BC2N

Hexagonal BC$_{2}$N is a superhard material recently identified to be comparable to or even harder than cubic boron nitride (c-BN) due the full $sp^3$ bonding character and the higher number of C-C and B-N bonds compared to C-N and B-C.Using a first-principles approach to calculate force constants and an exact numerical solution to the phonon Boltzmann equation, we show that BC$_{2}$N has a high lattice thermal conductivity exceeding that of c-BN owing to the strong C-C and B-N bonds, which produce high phonon frequencies as well as high acoustic velocities. The existence of large group velocities in the optical branches is responsible for its large thermal conductivity. Its coefficient of thermal expansion (CTE) is found to vary from 2.6$\times$10$^{-6}$/K at room temperature to almost 5$\times$ 10$^{-6}$/K at 1000K. The combination of large thermal conductivity and a good CTE match with that of Si, makes BC$_2$N a promising material for use in thermal management and high-power electronics applications. We show that the application of compressive strain increases the thermal conductivity significantly. This enhancement results from the overall increased frequency scale with pressure, which makes acoustic and optic velocities higher, and weaker phonon-phonon scattering rates.

preprint2015arXiv

Dimensionless Mapping: A Combinatorial Algorithm to Design Invisible Dopants

Electronic cloaking has been recently suggested to design invisible dopants with electronic scattering cross sections smaller than 1% of the physical cross section ( . Cloaking layers could be designed to coat nanoparticle dopants to minimally scatter conduction electrons and to enhance the electronic mobility. In some cases, such enhancements would result in larger thermoelectric power factors. The main difficulty is the fact that the created potential upon coating is not tunable and is determined by the band alignment of the chosen materials for the core, the shell and the host as well as the charge distribution in these layers. To find proper combinations of materials, one needs to probe a large class of materials combinations and layer sizes. This approach is time-consuming and impractical. Here we introduce a mapping method to identify possible combinations by comparing the dimensionless parameters of the chosen materials with the provided maps and without any transport calculations. Using this approach, we have identified several combinations of core, shell and host materials for which electronic cloaking is achievable. We have optimized the size and doping level of some of these materials combinations to maximize their thermoelectric power factor. Compared to traditional impurity-doped samples, up to 14.50 times improvement in the thermoelectric power factor was observed at T=77K.

preprint2015arXiv

Heat Management in Thermoelectric Power Generators

Thermoelectric power generators are used to convert heat into electricity. Like any other heat engine, the performance of a thermoelectric generator increases as the temperature difference on the sides increases. It is generally assumed that as more heat is forced through the thermoelectric legs, their performance increases. Therefore, insulations are typically used to minimize the heat losses and to confine the heat transport through the thermoelectric legs. In this paper we show that to some extend it is beneficial to purposely open heat loss channels in order to establish a larger temperature gradient and therefore to increase the overall efficiency and achieve larger electric power output. We define a modified Biot number (Bi) as an indicator of requirements for sidewall insulation. We show that if Bi<1, cooling from sidewalls increases the efficiency, while for Bi>1, it lowers the conversion efficiency.

preprint2006arXiv

Monte Carlo Simulation of Electron Transport in Degenerate Semiconductors

A modified algorithm is proposed to include Pauli exclusion principle in Monte-Carlo simulations. This algorithm has significant advantages to implement in terms of simplicity, speed and memory storage. We show that even in moderately high applied fields, one can estimate electronic distribution with a shifted Fermi sphere without introducing significant errors. Furthermore, the free-flights must be coupled to state availability constraints; this leads to substantial decrease in carrier heating at high fields. We give the correct definition for electronic temperature and show that in high applied fields, the quasi Fermi level is valley dependent. The effect of including Pauli exclusion principle on the band profile; electronic temperature and quasi Fermi level for inhomogeneous case of a single barrier heterostructure is illustrated.