Researcher profile

Mohammadjavad Mohebinia

Mohammadjavad Mohebinia contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2022arXiv

Generalized Dynamic Junction Theory to Resolve the Mechanism of Direct Current Generation in Liquid-Solid Interfaces

Despite the unsettled mechanism of electricity generation from the continuous flow of liquids on a surface, the charge-discharge theory has been widely accepted for alternating current (AC) generation from a moving droplet. It has been recently extended to rationalize direct current (DC) generation across a droplet moving between two different materials. By designing a reconfigurable contact between a metal wire and a water droplet moving on graphene, we show that the charge-discharge theory cannot explain the reversal of current when water-metal interfaces switch from dynamic to static. All experiments can be described after we distinguish a dynamic from a static interface and generalize the photovoltaic-like effect to all dynamic junctions: excited electrons and holes in a moving interface will be separated and swept under the built-in electrical field, leading to a DC response. This generalized theory will lead to an understanding and the design of efficient electricity generation based on interfacial charge transfer.

preprint2021arXiv

Marangoni Convection-Driven Laser Fountains and Waves on Free Surfaces of Liquids

It is well accepted that an outward Marangoni convection from a low surface tension region will make the surface depressed. Here, we report that this established perception is only valid for thin liquid films. Using surface laser heating, we show that in deep liquids a laser beam actually pulls up the fluid above the free surface generating fountains with different shapes. Whereas with decreasing liquid depth a transition from fountain to indentation with fountain in-indentation is observed. Further, high-speed imaging reveals a transient surface process before steady elevation is formed, and this dynamic deformation is subsequently utilized to resonantly excite giant surface waves by a modulated laser beam. Computational fluid dynamics models reveal the underlying flow patterns and quantify the depth-dependent and time-resolved surface deformations. Our discoveries and techniques have upended the century-old perception and opened up a new regime of interdisciplinary research and applications of Marangoni-induced interface phenomena and optocapillary fluidic surfaces-the control of fluids with light.

preprint2019arXiv

Photoluminescence mapping and time-domain thermo-photoluminescence for rapid imaging and measurement of thermal conductivity of boron arsenide

Cubic boron arsenide (BAs) is attracting greater attention due to the recent experimental demonstration of ultrahigh thermal conductivity \k{appa} above 1000 W/mK. However, its bandgap has not been settled and a simple yet effective method to probe its crystal quality is missing. Furthermore, traditional \k{appa} measurement methods are destructive and time consuming, thus they cannot meet the urgent demand for fast screening of high \k{appa} materials. After we experimentally established 1.82 eV as the indirect bandgap of BAs and observed room-temperature band-edge photoluminescence, we developed two new optical techniques that can provide rapid and non-destructive characterization of \k{appa} with little sample preparation: photoluminescence mapping (PL-mapping) and time-domain thermo-photoluminescence (TDTP). PL-mapping provides nearly real-time image of crystal quality and \k{appa} over mm-sized crystal surfaces; while TDTP allows us to pick up any spot on the sample surface and measure its \k{appa} using nanosecond laser pulses. These new techniques reveal that the apparent single crystals are not only non-uniform in \k{appa}, but also are made of domains of very distinct \k{appa}. Because PL-mapping and TDTP are based on the band-edge PL and its dependence on temperature, they can be applied to other semiconductors, thus paving the way for rapid identification and development of high-\k{appa} semiconducting materials.