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Researcher profile

Mohammad Saeed Bahramy

Mohammad Saeed Bahramy contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.str-el

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Published work

3 published item(s)

preprint2022arXiv

Hidden spin-orbital texture at the $\barΓ$-located valence band maximum of a transition metal dichalcogenide semiconductor

Finding stimuli capable of driving an imbalance of spin-polarised electrons within a solid is the central challenge in the development of spintronic devices. However, without the aid of magnetism, routes towards this goal are highly constrained with only a few suitable pairings of compounds and driving mechanisms found to date. Here, through spin- and angle-resolved photoemission along with density functional theory, we establish how the $p$-derived bulk valence bands of semiconducting 1T-HfSe$_2$ possess a local, ground-state spin texture spatially confined within each Se-sublayer due to strong sublayer-localised electric dipoles orientated along the $c$-axis. This hidden spin-polarisation manifests in a `coupled spin-orbital texture' with in-equivalent contributions from the constituent $p$-orbitals. While the overall spin-orbital texture for each Se sublayer is in strict adherence to time-reversal symmetry (TRS), spin-orbital mixing terms with net polarisations at time-reversal invariant momenta are locally maintained. These apparent TRS-breaking contributions dominate, and can be selectively tuned between with a choice of linear light polarisation, facilitating the observation of pronounced spin-polarisations at the Brillouin zone centre for all $k_z$. We discuss the implications for the generation of spin-polarised populations from 1T-structured transition metal dichalcogenides using a fixed energy, linearly polarised light source.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Magnetic generation and switching of topological quantum phases in a trivial semimetal $α{\mathrm{-EuP}}_3$

Topological materials have drawn increasing attention owing to their rich quantum properties, as highlighted by a large intrinsic anomalous Hall effect (AHE) in Weyl and nodal-line semimetals. However, the practical applications for topological electronics have been hampered by the difficulty in the external control of the band topology. Here we demonstrate a magnetic-field-induced switching of band topology in $α{\mathrm{-EuP}}_3$, a magnetic semimetal with a layered crystal structure derived from black phosphorus. When the magnetic field is applied perpendicular to the single mirror plane of the monoclinic structure, a giant AHE signal abruptly emerges at a certain threshold magnetization value, giving rise to a prominently large anomalous Hall angle of $\left|Θ_{\mathrm{AHE}}\right| \sim 20^{\circ}$. When the magnetic field is applied along the inter-layer direction, which breaks the mirror symmetry, the system shows a pronounced negative longitudinal magnetoresistance. On the basis of electronic structure calculations and symmetry considerations, these anomalous magneto-transport properties can be considered as manifestations of two distinct topological phases: topological nodal-line and Weyl semimetals, respectively. Notably, the nodal-line structure is composed of bands with the same spin character and spans a wide energy range around the Fermi level. These topological phases are stabilized via the exchange coupling between localized Eu-4$f$ moments and mobile carriers conducting through the phosphorus layers. Our findings provide a realistic solution for external manipulation of band topology, enriching the functional aspects of topological materials.

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preprint2020arXiv

Patterns and driving forces of dimensionality-dependent charge density waves in 2H-type transition metal dichalcogenides

Two-dimensional (2D) materials have become a fertile playground for the exploration and manipulation of novel collective electronic states. Recent experiments have unveiled a variety of robust 2D orders in highly-crystalline materials ranging from magnetism to ferroelectricity and from superconductivity to charge density wave (CDW) instability. The latter, in particular, appears in diverse patterns even within the same family of materials with isoelectronic species. Furthermore, how they evolve with dimensionality has so far remained elusive. Here we propose a general framework that provides a unfied picture of CDW ordering in the 2H polytype of four isoelectronic transition metal dichalcogenides 2H-MX$_2$ (M=Nb, Ta and X=S, Se). We first show experimentally that whilst NbSe$_2$ exhibits a strongly enhanced CDW order in the 2D limit, the opposite trend exists for TaSe$_2$ and TaS$_2$, with CDW being entirely absent in NbS$_2$ from its bulk to the monolayer. Such distinct behaviours are then demonstrated to be the result of a subtle, yet profound, competition between three factors: ionic charge transfer, electron-phonon coupling, and the spreading extension of the electronic wave functions. Despite its simplicity, our approach can, in essence, be applied to other quasi-2D materials to account for their CDW response at different thicknesses, thereby shedding new light on this intriguing quantum phenomenon and its underlying mechanisms.

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