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Mohammad Saeed Bahramy

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cond-mat.mtrl-sci cond-mat.mes-hall cond-mat.str-el cond-mat.supr-con

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preprint2022arXiv

Hidden spin-orbital texture at the $\barΓ$-located valence band maximum of a transition metal dichalcogenide semiconductor

Finding stimuli capable of driving an imbalance of spin-polarised electrons within a solid is the central challenge in the development of spintronic devices. However, without the aid of magnetism, routes towards this goal are highly constrained with only a few suitable pairings of compounds and driving mechanisms found to date. Here, through spin- and angle-resolved photoemission along with density functional theory, we establish how the $p$-derived bulk valence bands of semiconducting 1T-HfSe$_2$ possess a local, ground-state spin texture spatially confined within each Se-sublayer due to strong sublayer-localised electric dipoles orientated along the $c$-axis. This hidden spin-polarisation manifests in a `coupled spin-orbital texture' with in-equivalent contributions from the constituent $p$-orbitals. While the overall spin-orbital texture for each Se sublayer is in strict adherence to time-reversal symmetry (TRS), spin-orbital mixing terms with net polarisations at time-reversal invariant momenta are locally maintained. These apparent TRS-breaking contributions dominate, and can be selectively tuned between with a choice of linear light polarisation, facilitating the observation of pronounced spin-polarisations at the Brillouin zone centre for all $k_z$. We discuss the implications for the generation of spin-polarised populations from 1T-structured transition metal dichalcogenides using a fixed energy, linearly polarised light source.

preprint2022arXiv

Magnetic generation and switching of topological quantum phases in a trivial semimetal $α{\mathrm{-EuP}}_3$

Topological materials have drawn increasing attention owing to their rich quantum properties, as highlighted by a large intrinsic anomalous Hall effect (AHE) in Weyl and nodal-line semimetals. However, the practical applications for topological electronics have been hampered by the difficulty in the external control of the band topology. Here we demonstrate a magnetic-field-induced switching of band topology in $α{\mathrm{-EuP}}_3$, a magnetic semimetal with a layered crystal structure derived from black phosphorus. When the magnetic field is applied perpendicular to the single mirror plane of the monoclinic structure, a giant AHE signal abruptly emerges at a certain threshold magnetization value, giving rise to a prominently large anomalous Hall angle of $\left|Θ_{\mathrm{AHE}}\right| \sim 20^{\circ}$. When the magnetic field is applied along the inter-layer direction, which breaks the mirror symmetry, the system shows a pronounced negative longitudinal magnetoresistance. On the basis of electronic structure calculations and symmetry considerations, these anomalous magneto-transport properties can be considered as manifestations of two distinct topological phases: topological nodal-line and Weyl semimetals, respectively. Notably, the nodal-line structure is composed of bands with the same spin character and spans a wide energy range around the Fermi level. These topological phases are stabilized via the exchange coupling between localized Eu-4$f$ moments and mobile carriers conducting through the phosphorus layers. Our findings provide a realistic solution for external manipulation of band topology, enriching the functional aspects of topological materials.

preprint2020arXiv

Patterns and driving forces of dimensionality-dependent charge density waves in 2H-type transition metal dichalcogenides

Two-dimensional (2D) materials have become a fertile playground for the exploration and manipulation of novel collective electronic states. Recent experiments have unveiled a variety of robust 2D orders in highly-crystalline materials ranging from magnetism to ferroelectricity and from superconductivity to charge density wave (CDW) instability. The latter, in particular, appears in diverse patterns even within the same family of materials with isoelectronic species. Furthermore, how they evolve with dimensionality has so far remained elusive. Here we propose a general framework that provides a unfied picture of CDW ordering in the 2H polytype of four isoelectronic transition metal dichalcogenides 2H-MX$_2$ (M=Nb, Ta and X=S, Se). We first show experimentally that whilst NbSe$_2$ exhibits a strongly enhanced CDW order in the 2D limit, the opposite trend exists for TaSe$_2$ and TaS$_2$, with CDW being entirely absent in NbS$_2$ from its bulk to the monolayer. Such distinct behaviours are then demonstrated to be the result of a subtle, yet profound, competition between three factors: ionic charge transfer, electron-phonon coupling, and the spreading extension of the electronic wave functions. Despite its simplicity, our approach can, in essence, be applied to other quasi-2D materials to account for their CDW response at different thicknesses, thereby shedding new light on this intriguing quantum phenomenon and its underlying mechanisms.

preprint2015arXiv

Rich structural phase diagram and thermoelectric properties of layered tellurides Mo1-xNbxTe2

MoTe2 is a rare transition-metal ditelluride having two kinds of layered polytypes, hexagonal structure with trigonal prismatic Mo coordination and monoclinic structure with octahedral Mo coordination. The monoclinic distortion in the latter is caused by anisotropic metal-metal bonding. In this work, we have examined the Nb doping effect on both polytypes of MoTe2 and clarified a structural phase diagram for Mo1-xNbxTe2 containing four kinds of polytypes. A rhombohedral polytype crystallizing in polar space group has been newly identified as a high-temperature metastable phase at slightly Nb-rich composition. Considering the results of thermoelectric measurements and the first principles calculations, the Nb ion seemingly acts as a hole dopant in the rigid band scheme. On the other hand, the significant interlayer contraction upon the Nb doping, associated with the Te p-p hybridization, is confirmed especially for the monoclinic phase, which implies a shift of the p-band energy level. The origin of the metal-metal bonding in the monoclinic structure is discussed in terms of the d electron counting and the Te p-p hybridization.

preprint2014arXiv

Giant thermoelectric effect in graphene-based topological insulators with nanopores

Designing thermoelectric materials with high figure of merit $ZT=S^2 G T/κ$ requires fulfilling three often irreconcilable conditions, i.e., the high electrical conductance $G$, small thermal conductance $κ$ and high Seebeck coefficient $S$. Nanostructuring is one of the promising ways to achieve this goal as it can substantially suppress lattice contribution to $κ$. However, it may also unfavorably influence the electronic transport in an uncontrollable way. Here we theoretically demonstrate that this issue can be ideally solved by fabricating graphene nanoribbons with heavy adatoms and nanopores. These systems, acting as a two-dimensional topological insulator with robust helical edge states carrying electrical current, yield a highly optimized power factor $S^2G$ per helical conducting channel. Concurrently, their array of nanopores impedes the lattice thermal conduction through the bulk. Using quantum transport simulations coupled with first-principles electronic and phononic band structure calculations, the thermoelectric figure of merit is found to reach its maximum $ZT \simeq 3$ at $T \simeq 40$ K. This paves a way to design high-$ZT$ materials by exploiting the nontrivial topology of electronic states through nanostructuring.

preprint2013arXiv

Theory of topological quantum phase transitions in 3D noncentrosymmetric systems

We have constructed a general theory describing the topological quantum phase transitions in 3D systems with broken inversion symmetry. While the consideration of the system's codimension generally predicts the appearance of a stable metallic phase between the normal and topological insulators, it is shown that a direct topological phase transition between two insulators is also possible when an accidental band crossing (ABC) occurs along directions with high crystalline symmetry. At the quantum critical point (QCP), the energy dispersion becomes quadratic along one direction while the dispersions along the other two orthogonal directions are linear, which manifests the zero chirality of the band touching point (BTP). Due to the anisotropic dispersion at QCP, various thermodynamic and transport properties show unusual temperature dependence and anisotropic behaviors.

preprint2012arXiv

Topological protection of bound states against the hybridization

Topological invariants are conventionally known to be responsible for protection of extended states against disorder. A prominent example is the presence of topologically protected extended-states in two-dimensional (2D) quantum Hall systems as well as on the surface of three-dimensional (3D) topological insulators. Distinct from such cases, here we introduce a new concept, that is, the topological protection of bound states against hybridization. This situation is shown to be realizable in a 2D quantum Hall insulator put on a 3D trivial insulator. In such a configuration, there exist topologically protected bound states, localized along the normal direction of 2D plane, in spite of hybridization with the continuum of extended states. The one-dimensional edge states are also localized along the same direction as long as their energies are within the band gap. This finding demonstrates the dual role of topological invariants, as they can also protect bound states against hybridization in a continuum.