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Mohammad Rashidi

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Published work

9 published item(s)

preprint2019arXiv

Deep Learning-Guided Surface Characterization for Autonomous Hydrogen Lithography

As the development of atom scale devices transitions from novel, proof-of-concept demonstrations to state-of-the-art commercial applications, automated assembly of such devices must be implemented. Here we present an automation method for the identification of defects prior to atomic fabrication via hydrogen lithography using deep learning. We trained a convolutional neural network to locate and differentiate between surface features of the technologically relevant hydrogen-terminated silicon surface imaged using a scanning tunneling microscope. Once the positions and types of surface features are determined, the predefined atomic structures are patterned in a defect-free area. By training the network to differentiate between common defects we are able to avoid charged defects as well as edges of the patterning terraces. Augmentation with previously developed autonomous tip shaping and patterning modules allows for atomic scale lithography with minimal user intervention.

preprint2019arXiv

Detecting and Directing Single Molecule Binding Events on H-Si(100) with Application to Ultra-dense Data Storage

Many new material systems are being explored to enable smaller, more capable and energy efficient devices. These bottom up approaches for atomic and molecular electronics, quantum computation, and data storage all rely on a well-developed understanding of materials at the atomic scale. Here, we report a versatile scanning tunneling microscope (STM) charge characterization technique, which reduces the influence of the typically perturbative STM tip field, to develop this understanding even further. Using this technique, we can now observe single molecule binding events to atomically defined reactive sites (fabricated on a hydrogen-terminated silicon surface) through electronic detection. We then developed a new error correction tool for automated hydrogen lithography, directing molecular hydrogen binding events using these sites to precisely repassivate surface dangling bonds (without the use of a scanned probe). We additionally incorporated this molecular repassivation technique as the primary rewriting mechanism in new ultra-dense atomic data storage designs (0.88 petabits per in$^{2}$).

preprint2019arXiv

Electrostatic Landscape of a H-Silicon Surface Probed by a Moveable Quantum Dot

With nanoelectronics reaching the limit of atom-sized devices, it has become critical to examine how irregularities in the local environment can affect device functionality. Here, we characterize the influence of charged atomic species on the electrostatic potential of a semiconductor surface at the sub-nanometer scale. Using non-contact atomic force microscopy, two-dimensional maps of the contact potential difference are used to show the spatially varying electrostatic potential on the (100) surface of hydrogen-terminated highly-doped silicon. Three types of charged species, one on the surface and two within the bulk, are examined. An electric field sensitive spectroscopic signature of a single probe atom reports on nearby charged species. The identity of one of the near-surface species has been uncertain. That species, suspected of being boron or perhaps a negatively charged donor species, we suggest is of a character more consistent with either a negatively charged interstitial hydrogen or a hydrogen vacancy complex.

preprint2018arXiv

SiQAD: A Design and Simulation Tool for Atomic Silicon Quantum Dot Circuits

This paper introduces SiQAD, a computer-aided design tool enabling the rapid design and simulation of atomic silicon dangling bond quantum dot patterns capable of computational logic. Several simulation tools are included, each able to inform the designer on various aspects of their designs: a ground-state electron configuration finder, a non-equilibrium electron dynamics simulator, and an electric potential landscape solver with clocking electrode support. Simulations have been compared against past experimental results to inform the electron population estimation and dynamic behavior. New logic gates suitable for this platform have been designed and simulated, and a clocked wire has been demonstrated. This work paves the way for the exploration of the vast and fertile design space of atomic silicon dangling bond quantum dot circuits.

preprint2016arXiv

Multiple Silicon Atom Artificial Molecules

We present linear ensembles of dangling bond chains on a hydrogen terminated Si(100) surface, patterned in the closest spaced arrangement allowed by the surface lattice. Local density of states maps over a range of voltages extending spatially over the close-coupled entities reveal a rich energetic and spatial variation of electronic states. These artificial molecules exhibit collective electronic states resulting from covalent interaction of the constituent atoms. A pronounced electrostatic perturbation of dangling bond chain structure is induced by close placement of a negatively dangling bond. The electronic changes so induced are entirely removed, paradoxically, by addition of a second dangling bond.

preprint2016arXiv

Time-Resolved Imaging of Negative Differential Resistance on the Atomic Scale

Negative differential resistance remains an attractive but elusive functionality, so far only finding niche applications. Atom scale entities have shown promising properties, but viability of device fabrication requires fuller understanding of electron dynamics than has been possible to date. Using an all-electronic time-resolved scanning tunneling microscopy technique and a Green's function transport model, we study an isolated dangling bond on a hydrogen terminated silicon surface. A robust negative differential resistance feature is identified as a many body phenomenon related to occupation dependent electron capture by a single atomic level. We measure all the time constants involved in this process and present atomically resolved, nanosecond timescale images to simultaneously capture the spatial and temporal variation of the observed feature.

preprint2016arXiv

Time-Resolved Single Dopant Charge Dynamics in Silicon

As the ultimate miniaturization of semiconductor devices approaches, it is imperative that the effects of single dopants be clarified. Beyond providing insight into functions and limitations of conventional devices, such information enables identification of new device concepts. Investigating single dopants requires sub-nanometre spatial resolution, making scanning tunnelling microscopy an ideal tool. However, dopant dynamics involve processes occurring at nanosecond timescales, posing a significant challenge to experiment. Here we use time-resolved scanning tunnelling microscopy and spectroscopy to probe and study transport through a dangling bond on silicon before the system relaxes or adjusts to accommodate an applied electric field. Atomically resolved, electronic pump-probe scanning tunnelling microscopy permits unprecedented, quantitative measurement of time-resolved single dopant ionization dynamics. Tunnelling through the surface dangling bond makes measurement of a signal that would otherwise be too weak to detect feasible. Distinct ionization and neutralization rates of a single dopant are measured and the physical process controlling those are identified.

preprint2015arXiv

Scanning tunneling spectroscopy reveals a silicon dangling bond charge state transition

We report the study of single dangling bonds (DB) on the hydrogen terminated silicon (100) surface using a low temperature scanning tunneling microscope (LT-STM). By investigating samples prepared with different annealing temperatures, we establish the critical role of subsurface arsenic dopants on the DB electronic properties. We show that when the near surface concentration of dopants is depleted as a result of $1250°C$ flash anneals, a single DB exhibits a sharp conduction step in its I(V) spectroscopy that is not due to a density of states effect but rather corresponds to a DB charge state transition. The voltage position of this transition is perfectly correlated with bias dependent changes in STM images of the DB at different charge states. Density functional theory (DFT) calculations further highlight the role of subsurface dopants on DB properties by showing the influence of the DB-dopant distance on the DB state. We discuss possible theoretical models of electronic transport through the DB that could account for our experimental observations.

preprint2012arXiv

'Kondo state' and Kondo resonance in a two-dimensional electron gas

The delicate balance of spin-screening and spin-aligning interactions determines many of the peculiar properties of dilute magnetic systems. We study a surface-supported all-organic multi-impurity Kondo spin system at the atomic scale by low-temperature scanning tunnelling microscopy and -spectroscopy. The model system consists of spin-1/2 radicals that are aligned in one-dimensional chains and interact via a ferromagnetic RKKY interaction mediated by the 2DEG of the supporting substrate. Due to the RKKY-induced enhanced depopulation of one spin-subband in the 2DEG, we finally succeeded to detect the so far unobserved 'Kondo state' as opposed to the well-established Kondo resonance. Its cloud of screening electrons, that are virtually bound to the radicals below the Kondo temperature, represents the extended exchange hole of the ferromagnetically polarized spin chain imaged here in real space.