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Source author record

Mohammad Nasim Imtiaz Khan

Mohammad Nasim Imtiaz Khan appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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Emerging TechnologiesArtificial IntelligenceCryptography and SecurityHardware ArchitectureNeural and Evolutionary Computing

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Published work

4 published item(s)

preprint2022arXiv

Analysis of Power-Oriented Fault Injection Attacks on Spiking Neural Networks

Spiking Neural Networks (SNN) are quickly gaining traction as a viable alternative to Deep Neural Networks (DNN). In comparison to DNNs, SNNs are more computationally powerful and provide superior energy efficiency. SNNs, while exciting at first appearance, contain security-sensitive assets (e.g., neuron threshold voltage) and vulnerabilities (e.g., sensitivity of classification accuracy to neuron threshold voltage change) that adversaries can exploit. We investigate global fault injection attacks by employing external power supplies and laser-induced local power glitches to corrupt crucial training parameters such as spike amplitude and neuron's membrane threshold potential on SNNs developed using common analog neurons. We also evaluate the impact of power-based attacks on individual SNN layers for 0% (i.e., no attack) to 100% (i.e., whole layer under attack). We investigate the impact of the attacks on digit classification tasks and find that in the worst-case scenario, classification accuracy is reduced by 85.65%. We also propose defenses e.g., a robust current driver design that is immune to power-oriented attacks, improved circuit sizing of neuron components to reduce/recover the adversarial accuracy degradation at the cost of negligible area and 25% power overhead. We also present a dummy neuron-based voltage fault injection detection system with 1% power and area overhead.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

TrappeD: DRAM Trojan Designs for Information Leakage and Fault Injection Attacks

In this paper, we investigate the advanced circuit features such as wordline- (WL) underdrive (prevents retention failure) and overdrive (assists write) employed in the peripherals of Dynamic RAM (DRAM) memories from a security perspective. In an ideal environment, these features ensure fast and reliable read and write operations. However, an adversary can re-purpose them by inserting Trojans to deliver malicious payloads such as fault injections, Denial-of-Service (DoS), and information leakage attacks when activated by the adversary. Simulation results indicate that wordline voltage can be increased to cause retention failure and thereby launch a DoS attack in DRAM memory. Furthermore, two wordlines or bitlines can be shorted to leak information or inject faults by exploiting the DRAM's refresh operation. We demonstrate an information leakage system exploit by implementing TrappeD on RocketChip SoC.

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preprint2016arXiv

Attack resilient architecture to replace embedded Flash with STTRAM in homogeneous IoTs

Spin-Transfer Torque RAM (STTRAM) is an emerging Non-Volatile Memory (NVM) technology that provides better endurance, write energy and performance than traditional NVM technologies such as Flash. In embedded application such as microcontroller SoC of Internet of Things (IoT), embedded Flash (eFlash) is widely employed. However, eFlash is also associated with cost. Therefore, replacing eFlash with STTRAM is desirable in IoTs for power-efficiency. Although promising, STTRAM brings several new security and privacy challenges that pose a significant threat to sensitive data in memory. This is inevitable due to the underlying dependency of this memory technology on environmental parameters such as temperature and magnetic fields that can be exploited by an adversary to tamper with the program and data. In this paper, we investigate these attacks and propose a novel memory architecture for attack resilient IoT network. The information redundancy present in a homogeneous peer-to-peer connected IoT network is exploited to restore the corrupted memory of any IoT node when under attack. We are able to build a failsafe IoT system with STTRAM based program memory which allows guaranteed execution of all the IoT nodes without complete shutdown of any node under attack. Experimental results using commercial IoT boards demonstrate the latency and energy overhead of the attack recovery process.

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preprint2016arXiv

Multi-Bit Read and Write Methodologies for Diode-STTRAM Crossbar Array

Crossbar arrays using emerging non-volatile memory technologies such as Resistive RAM (ReRAM) offer high density, fast access speed and low-power. However the bandwidth of the crossbar is limited to single-bit read/write per access to avoid selection of undesirable bits. We propose a technique to perform multi-bit read and write in a diode-STTRAM (Spin Transfer Torque RAM) crossbar array. Simulation shows that the biasing voltage of half-selected cells can be adjusted to improve the sense margin during read and thus reduce the sneak path through the half-selected cells. In write operation, the half-selected cells are biased with a pulse voltage source which increases the write latency of these cells and enables to write 2-bits while keeping the half-selected bits undisturbed. Simulation results indicate biasing the half-selected cells by 700mV can enable reading as much as 512-bits while sustaining 512x512 crossbar with 2.04 years retention. The 2-bit writing requires pulsing by 50mV to optimize energy.

0 citations0 reviewsNo code linkedOpen access