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Mohammad Ali Mohebpour

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cond-mat.mes-hall cond-mat.mtrl-sci

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preprint2022arXiv

Mechanical, optical, and thermoelectric properties of semiconducting ZnIn2X4 (X= S, Se, Te) monolayers

Mechanical stability of the ZnIn2X4 monolayers. The ZnIn2S4 and ZnIn2Se4 are semiconductors with direct band gaps of 3.94 and 2.77 eV, respectively whereas the ZnIn2Te4 shows an indirect band gap of 1.84 eV at the G0W0 level. The optical properties achieved from the solution of the Bethe-Salpeter equation predict the exciton binding energy of the ZnIn2S4, ZnIn2Se4, and ZnIn2Te4 monolayers to be 0.51, 0.41, and 0.34 eV, respectively, suggesting the high stability of the excitonic states against thermal dissociation. Using the iterative solutions of the Boltzmann transport equation accelerated by machine learning interatomic potentials, the room-temperature lattice thermal conductivity of the ZnIn2S4, ZnIn2Se4, and ZnIn2Te4 monolayers is predicted to be remarkably low as 5.8, 2.0, and 0.4 W/mK, respectively. Due to the low lattice thermal conductivity, high thermopower, and large figure of merit, we propose the ZnIn2Se4 and ZnIn2Te4 monolayers as promising candidates for thermoelectric energy conversion systems. This study provides an extensive vision concerning the intrinsic physical properties of the ZnIn2X4 nanosheets and highlights their characteristics for energy conversion and optoelectronics applications.

preprint2019arXiv

Tuning electronic and optical properties of free-standing Sn2Bi monolayer stabilized by hydrogenation

In this study, we systematically investigated the structural, mechanical, electronic and optical properties of Sn2Bi monolayer, a sheet experimentally synthesized recently [PRL, 121, 126801 (2018)] which has been hydrogenated (Sn2BiH2) to stabilize free-standing form using density functional theory (DFT). For tuning the band structure and electronic properties, the mechanical strain and electric field are used. Our investigations show that in this free-standing sample, there are electron flat bands and free hole bands like the recently synthesized sample on silicon wafer, which provide the possibility of having strongly localized electrons and free holes with high mobility. Also, the band gap of Sn2BiH2 monolayer has experienced a growth of 80% compared with the experimental sample. The relevant results to strain suggest that the band gap can be properly manipulated by biaxial strain (-13% to +21%) within a range from 0.2 to 1.6 eV. It should be mentioned that the stability and flexibility of the corresponding monolayer under tensile and compressive strain are due to the strong σ bonds between atoms. We also realized the strain can cause indirect-direct transition in the band gap. Furthermore, our optical findings indicate that the Sn2BiH2 monolayer has almost metallic properties in a specific range of UV spectrum and it is transparent in the IR and visible spectrum of electromagnetic radiation. All these tunable properties and nontrivial features portend that Sn2BiH2 monolayer has great potentials in applications as near-infrared detectors, thermoelectric devices, field-effect transistors, sensors, photocatalysis, energy harvesting, and optoelectronics.