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Meysam Bagheri Tagani

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cond-mat.mes-hall cond-mat.mtrl-sci

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preprint2026arXiv

Kagome goldene with flat bands and Dirac nodal line fermions via line-graph epitaxy

The kagome lattice has emerged as a promising platform for investigating exotic quantum phases. However, achieving a single-atomic-layer kagome lattice in elemental materials remains a significant challenge. Here, we introduce line-graph epitaxy, a novel approach that enables the atomic-scale synthesis of goldene, a monolayer of elemental gold atoms arranged in a kagome lattice. Through scanning tunneling microscopy/spectroscopy (STM/STS), and density functional theory (DFT) calculations, we demonstrate the formation of kagome goldene, featuring a flat band with a van Hove singularity approximately 1.1 eV below the Fermi level, signaling strong electron correlation effects. Notably, the flat band is disrupted at the zigzag edges of goldene nanoflakes, revealing substantial edge effects. Furthermore, our calculations show that weak interlayer interactions between goldene and the underlying Au2Ge substrate generate dual Dirac nodal lines through a proximity effect. These findings offer not only a novel strategy for constructing elemental kagome lattices, but also a generalizable framework for fabricating and controlling line-graph materials. This research advances the exploration of quantum phases driven by strong correlations and the design of materials for next-generation quantum technologies.

preprint2022arXiv

Bilayer borophene: The effects of substrate and stacking

Bilayer borophene has recently attracted much interest due to its outstanding mechanical and electronic properties. The interlayer interactions of these bilayers are reported differently in theoretical and experimental studies. Herein, we design and investigate bilayer beta12-borophene, by first-principles calculations. Our results show that the interlayer distance of the relaxed AA-stacked bilayer is about 2.5 A, suggesting a van der Waals (vdW) interlayer interaction. However, this is not supported by previous experiments, therefore by constraining the interlayer distance, we propose a preferred model which is close to experimental records. This preferred model has one covalent interlayer bond in every unit cell (single-pillar). Further, we argue that the preferred model is nothing but the relaxed model under a 2% compression. Additionally, we designed three substrate-supported bilayers on the Ag, Al, and Au substrates, which lead to double-pillar structures. Afterward, we investigate the AB stacking, which forms covalent bonds in the relaxed form, without the need for compression or substrate. Moreover, phonon dispersion shows that, unlike the AA stacking, the AB stacking is stable in freestanding form. Subsequently, we calculate the mechanical properties of the AA and AB stackings. The ultimate strengths of the AA and the AB stackings are 29.72 N/m at 12% strain and 23.18 N/m at 8% strain, respectively. Moreover, the calculated Young's moduli are 419 N/m and 356 N/m for the AA and the AB stackings, respectively. These results show the superiority of bilayer borophene over bilayer MoS2 in terms of stiffness and compliance. Our results can pave the way for future studies on bilayer borophene structures.

preprint2022arXiv

Mechanical, optical, and thermoelectric properties of semiconducting ZnIn2X4 (X= S, Se, Te) monolayers

Mechanical stability of the ZnIn2X4 monolayers. The ZnIn2S4 and ZnIn2Se4 are semiconductors with direct band gaps of 3.94 and 2.77 eV, respectively whereas the ZnIn2Te4 shows an indirect band gap of 1.84 eV at the G0W0 level. The optical properties achieved from the solution of the Bethe-Salpeter equation predict the exciton binding energy of the ZnIn2S4, ZnIn2Se4, and ZnIn2Te4 monolayers to be 0.51, 0.41, and 0.34 eV, respectively, suggesting the high stability of the excitonic states against thermal dissociation. Using the iterative solutions of the Boltzmann transport equation accelerated by machine learning interatomic potentials, the room-temperature lattice thermal conductivity of the ZnIn2S4, ZnIn2Se4, and ZnIn2Te4 monolayers is predicted to be remarkably low as 5.8, 2.0, and 0.4 W/mK, respectively. Due to the low lattice thermal conductivity, high thermopower, and large figure of merit, we propose the ZnIn2Se4 and ZnIn2Te4 monolayers as promising candidates for thermoelectric energy conversion systems. This study provides an extensive vision concerning the intrinsic physical properties of the ZnIn2X4 nanosheets and highlights their characteristics for energy conversion and optoelectronics applications.

preprint2020arXiv

Antimonene/Bismuthene Vertical Van-der Waals Heterostructure: A Computational Study

In this paper, the structural, electronic, mechanical and optical properties of antimonene-bismuthene Van-der Waals heterostructure (Sb-Bi HS) were calculated based on the first principle density functional theory. We explored different stacks of Sb-Bi HS to find the most and the least stable staking for this heterostructure. At the GGA level of theory, the most stable model is a semiconductor with an indirect band gap of 159 meV. However, when the spin-orbit (SO) interaction is considered, the VBM and CBM touch the Fermi level and the HS becomes a semimetal. Our results also show that the electronic properties of the HS are robust against the external electric field and biaxial strain. Young modulus was calculated as 64.3N/M which predicts this HS as a resistant material against being stretched or compressed. The calculated optical properties, similar to monolayer antimonene, are completely dependent on the polarization of incident light and differ when parallel or perpendicular polarization is considered. Moreover, the absorption coefficient for perpendicular polarization in the visible region is significantly increased in comparison with the monolayer antimonene. High structural stability, electronic and mechanical robustness against electric field and strain, along with polarization-dependent optical properties of this HS, promise for its applications in beam splitters and nano-scale mirrors.

preprint2019arXiv

Tuning electronic and optical properties of free-standing Sn2Bi monolayer stabilized by hydrogenation

In this study, we systematically investigated the structural, mechanical, electronic and optical properties of Sn2Bi monolayer, a sheet experimentally synthesized recently [PRL, 121, 126801 (2018)] which has been hydrogenated (Sn2BiH2) to stabilize free-standing form using density functional theory (DFT). For tuning the band structure and electronic properties, the mechanical strain and electric field are used. Our investigations show that in this free-standing sample, there are electron flat bands and free hole bands like the recently synthesized sample on silicon wafer, which provide the possibility of having strongly localized electrons and free holes with high mobility. Also, the band gap of Sn2BiH2 monolayer has experienced a growth of 80% compared with the experimental sample. The relevant results to strain suggest that the band gap can be properly manipulated by biaxial strain (-13% to +21%) within a range from 0.2 to 1.6 eV. It should be mentioned that the stability and flexibility of the corresponding monolayer under tensile and compressive strain are due to the strong σ bonds between atoms. We also realized the strain can cause indirect-direct transition in the band gap. Furthermore, our optical findings indicate that the Sn2BiH2 monolayer has almost metallic properties in a specific range of UV spectrum and it is transparent in the IR and visible spectrum of electromagnetic radiation. All these tunable properties and nontrivial features portend that Sn2BiH2 monolayer has great potentials in applications as near-infrared detectors, thermoelectric devices, field-effect transistors, sensors, photocatalysis, energy harvesting, and optoelectronics.