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Researcher profile

Mitsuru Itoh

Mitsuru Itoh contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.str-el

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Published work

4 published item(s)

preprint2021arXiv

Covalency driven modulation of paramagnetism and development of lone pair ferroelectricity in multiferroic Pb$_3$TeMn$_3$P$_2$O$_{14}$

We have investigated the structural, magnetic and dielectric properties of Pb-based langasite compound Pb$_3$TeMn$_3$P$_2$O$_{14}$ both experimentally and theoretically in the light of metal-oxygen covalency, and the consequent generation of multiferroicity. It is known that large covalency between Pb 6$p$ and O 2$p$ plays instrumental role behind stereochemical lone pair activity of Pb. The same happens here but a subtle structural phase transition above room temperature changes the degree of such lone pair activity and the system becomes ferroelectric below 310 K. Interestingly, this structural change also modulates the charge densities on different constituent atoms and consequently the overall magnetic response of the system while maintaining global paramagnetism behavior of the compound intact. This single origin of modulation in polarity and paramagnetism inherently connects both the functionalities and the system exhibits mutiferroicity at room temperature.

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preprint2021arXiv

The critical role of stereochemically active lone pair in introducing high temperature ferroelectricity

In this paper a comparative structural, dielectric and magnetic study of two langasite compounds Ba$_3$TeCo$_3$P$_2$O$_{14}$ (absence of lone pair) and Pb$_3$TeCo$_3$P$_2$O$_{14}$ (Pb$^{2+}$ 6$s^2$ lone pair) have been carried out to precisely explore the development of room temperature spontaneous polarization in presence of stereochemically active lone pair. In case of Pb$_3$TeCo$_3$P$_2$O$_{14}$, mixing of both Pb 6$s$ with Pb 6$p$ and O 2$p$ help the lone pair to be stereochemically active. This stereochemically active lone pair brings a large structural distortion within the unit cell and creates a polar geometry, while Ba$_3$TeCo$_3$P$_2$O$_{14}$ compound remains in a nonpolar structure due to the absence of any such effect. Consequently, polarization measurement under varying electric field confirms room temperature ferroelectricity for Pb$_3$TeCo$_3$P$_2$O$_{14}$, which was not the case of Ba$_3$TeCo$_3$P$_2$O$_{14}$. Detailed study was carried out to understand the microscopic mechanism of ferroelectricity which revealed the exciting underlying activity of poler TeO$_6$ octahedral unit as well as Pb-hexagon.

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preprint2020arXiv

Sizeable suppression of thermal Hall effect upon isotopic substitution in strontium titanate

We report measurements of the thermal Hall effect in single crystals of both pristine and isotopically substituted strontium titanate. We discovered a two orders of magnitude difference in the thermal Hall conductivity between $SrTi^{16}O_3$ and $^{18}O$-enriched $SrTi^{18}O_3$ samples. In most temperature ranges, the magnitude of thermal Hall conductivity ($κ_{xy}$) in $SrTi^{18}O_3$ is proportional to the magnitude of the longitudinal thermal conductivity ($κ_{xx}$), which suggests a phonon-mediated thermal Hall effect. However, they deviate in the temperature of their maxima, and the thermal Hall angle ratio ($|κ_{xy}/κ_{xx}|$) shows anomalously decreasing behavior below the ferroelectric Curie temperature $T_c$ ~$25 K$. This observation suggests a new underlying mechanism, as the conventional scenario cannot explain such differences within the slight change in phonon spectrum. Notably, the difference in magnitude of thermal Hall conductivity and rapidly decreasing thermal Hall angle ratio in $SrTi^{18}O_3$ is correlated with the strength of quantum critical fluctuations in this displacive ferroelectric. This relation points to a link between the quantum critical physics of strontium titanate and its thermal Hall effect, a possible clue to explain this example of an exotic phenomenon in non-magnetic insulating systems.

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preprint2019arXiv

Investigation of Room Temperature Ferroelectricity and Ferrimagnetism in Multiferroic AlxFe2-xO3 Epitaxial Thin Films

Multiferroic materials open up the possibility to design novel functionality in electronic devices, with low energy consumption. However, there are very few materials that show multiferroicity at room temperature, which is essential to be practically useful. AlxFe2-xO3 (x-AFO) thin films, belonging to the k-Al2O3 family are interesting because they show room temperature ferrimagnetism and have a polar crystal structure. However, it is difficult to realise its ferroelectric properties at room temperature, due to low resistivity of the films. In this work, we have deposited x-AFO (0.5 <= x <= 1) epitaxial thin films with low leakage, on SrTiO3<111> substrates by Pulsed Laser Deposition. Magnetic measurements confirmed room temperature ferrimagnetism of the films, however the Curie temperature was found to be influenced by deposition conditions. First principle calculations suggested that ferroelectric domain switching occurs through shearing of in-plane oxygen layers, and predicted a high polarization value of 24 uC/cm2. However, actual ferroelectric measurements showed the polarization to be two order less. Presence of multiple in-plane domains which oppose polarization switching of adjacent domains, was found to be the cause for the small observed polarization. Comparing dielectric relaxation studies and ferroelectric characterization showed that oxygen-vacancy defects assist domain wall motion, which in turn facilitates polarization switching.

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