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Miquel Royo

Miquel Royo appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

10 published item(s)

preprint2021arXiv

Lattice-mediated bulk flexoelectricity from first principles

We present the derivation and code implementation of a first-principles methodology to calculate the lattice-mediated contributions to the bulk flexoelectric tensor. The approach is based on our recent analytical long-wavelength extension of density-functional perturbation theory [Royo and Stengel, Phys. Rev. X 9, 021050 (2019)], and avoids the cumbersome numerical derivatives with respect to the wave vector that were adopted in previous implementations. To substantiate our results, we revisit and numerically validate the sum rules that relate flexoelectricity and uniform elasticity by generalizing them to regimes where finite forces and stresses are present. We also revisit the definition of the elastic tensor under stress, especially in regards to the existing linear-response implementation. We demonstrate the performance of our method by applying it to representative cubic crystals and to the tetragonal low-temperature polymorph of SrTiO$_3$, obtaining excellent agreement with the available literature data.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Tailoring the core electron density in modulation-doped Core-Multi-Shell nanowires

We show how a proper radial modulation of the composition of core-multi-shell nanowires critically enhances the control of the free-carrier density in the high-mobility core with respect to core-single-shell structures, thus overcoming the technological difficulty of fine tuning the remote doping density. We calculate the electron population of the different nanowire layers as a function of the doping density and of several geometrical parameters by means of a self-consistent Schrödinger-Poisson approach: Free carriers tend to localize in the outer shell and screen the core from the electric field of the dopants.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Aharonov-Bohm oscillations and electron gas transitions in hexagonal core-shell nanowires with an axial magnetic field

We use spin-density-functional theory within an envelope function approach to calculate electronic states in a GaAs/InAs core-shell nanowire pierced by an axial magnetic field. Our fully 3D quantum modeling includes explicitly the description of the realistic cross-section and composition of the sample, and the electrostatic field induced by external gates in two different device geometries, gate-all-around and back-gate. At low magnetic fields, we investigate Aharonov-Bohm oscillations and signatures therein of the discrete symmetry of the electronic system, and we critically analyze recent magnetoconductance observations. At high magnetic fields we find that several charge and spin transitions occur. We discuss the origin of these transitions in terms of different localization and Coulomb regimes and predict their signatures in magnetoconductance experiments.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Magneto-photoluminescence in GaAs/AlAs core-multishell nanowires: a theoretical investigation

The magneto-photoluminescence in modulation doped core-multishell nanowires is predicted as a function of photo-excitation intensity in non-perturbative transverse magnetic fields. We use a self-consistent field approach within the effective mass approximation to determine the photoexcited electron and hole populations, including the complex composition and anisotropic geometry of the nano-material. The evolution of the photoluminescence is analyzed as a function of i) photo-excitation power, ii) magnetic field intensity, iii) type of doping, and iv) anisotropy with respect to field orientation.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Prediction of inelastic light scattering spectra from electronic collective excitations in GaAs/AlGaAs core-multishell nanowires

We predict inelastic light scattering spectra from electron collective excitations in a coaxial quantum well embedded in a core-multishell GaAs/AlGaAs nanowire. The complex composition, the hexagonal cross section and the remote doping of typical samples are explicitly included, and the free electron gas is obtained by a DFT approach. Inelastic light scattering cross sections due to charge and spin collective excitations belonging to quasi-1D and quasi-2D states, which coexist in such radial heterostructures, are predicted in the non-resonant approximation from a fully three-dimensional multi-subband TDDFT formalism. We show that collective excitations can be classified in azimuthal, radial and longitudinal excitations, according to the associated density fluctuations, and we suggest that their character can be exposed by specific spectral dispersion of inelastic light scattering along different planes of the heterostructure.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Symmetries in the collective excitations of an electron gas in core-shell nanowires

We study the collective excitations and inelastic light scattering cross-section of an electron gas confined in a GaAs/AlGaAs coaxial quantum well. These system can be engineered in a core-multi-shell nanowire and inherit the hexagonal symmetry of the underlying nanowire substrate. As a result, the electron gas forms both quasi 1D channels and quasi 2D channels at the quantum well bents and facets, respectively. Calculations are performed within the RPA and TDDFT approaches. We derive symmetry arguments which allow to enumerate and classify charge and spin excitations and determine whether excitations may survive to Landau damping. We also derive inelastic light scattering selection rules for different scattering geometries. Computational issues stemming from the need to use a symmetry compliant grid are also investigated systematically.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Landau levels, edge states and magneto-conductance in GaAs/AlGaAs core-shell nanowires

Magnetic states of the electron gas confined in modulation-doped core-shell nanowires are calculated for a transverse field of arbitrary strength and orientation. Magneto-conductance is predicted within the Landauer approach. The modeling takes fully into account the radial material modulation, the prismatic symmetry and the doping profile of realistic GaAs/AlGaAs devices within an envelope-function approach, and electron-electron interaction is included in a mean-field self-consistent approach. Calculations show that in the low free-carrier density regime, magnetic states can be described in terms of Landau levels and edge states, similar to planar two-dimensional electron gases in a Hall bar. However, at higher carrier density the dominating electron-electron interaction leads to a strongly inhomogeneous localization at the prismatic heterointerface. This gives rise to a complex band dispersion, with local minima at finite values of the longitudinal wave vector, and a region of negative magneto-resistance. The predicted marked anisotropy of the magneto-conductance with field direction is a direct probe of the inhomogeneous electron gas localization of the conductive channel induced by the prismatic geometry.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Electron and hole gas in modulation doped GaAs/AlGaAs radial heterojunctions

We perform self-consistent Schrödinger-Poisson calculations with exchange and correlation corrections to determine the electron/hole gas in a radial hetero-junction formed in a modulation doped GaAs/AlGaAs core-multi-shell nanowire (CSNW) which is n-/p-doped. Realistic composition and geometry are mapped on an symmetry compliant two-dimensional grid, and the inversion/accumulation layers are obtained assuming mid-gap Fermi energy pinning at the surface. We show that the electron and hole gases can be tuned to different localizations and symmetries inside the core as a function of the doping level. Contrary to planar hetero-junctions, conduction electrons do not form a uniform 2D electron gas (2DEG) localized at the GaAs/AlGaAs interface, but rather show a transition between i) an isotropic, cylindrical distribution deep in the GaAs core (low doping), and ii) a set of six tunnel-coupled quasi-1D channels at the edges of the interface (high doping). Holes, on the other hand, are much more localized at the GaAs/AlGaAs interface and form either i) six separated planar 2DEGs at the GaAs/AlGaAs interfaces (low doping), ii) a quasi uniform six-fold bent 2DEG (intermediate doping), or iii) six tunnel-coupled quasi-1D channels at the edges (high doping). We also simulate the electron/hole gas in a CSNW-based field effect transistor. The field generated by a back-gate may easily deform the electron or hole gas, breaking the six-fold symmetry. Single 2DEGs at one interface or multiple quasi-1D channels are shown to form as a function of voltage intensity, polarity, and carrier type.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Emission spectrum of quasi-resonant laterally coupled quantum dots

We calculate the emission spectrum of neutral and charged excitons in a pair of laterally coupled InGaAs quantum dots with nearly degenerate energy levels. As the interdot distance decreases, a number of changes take place in the emission spectrum which can be used as indications of molecular coupling. These signatures ensue from the stronger tunnel-coupling of trions as compared to that of neutral excitons.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Dielectric confinement of excitons in type-I and type-II semiconductor nanorods

We theoretically study the effect of the dielectric environment on the exciton ground state of CdSe and CdTe/CdSe/CdTe nanorods. We show that insulating environments enhance the exciton recombination rate and blueshift the emission peak by tens of meV. These effects are particularly pronounced for type-II nanorods. In these structures, the dielectric confinement may even modify the spatial distribution of electron and hole charges. A critical electric field is required to separate electrons from holes, whose value increases with the insulating strength of the surroundings.

0 citations0 reviewsNo code linkedOpen access