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Josep Planelles

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Published work

13 published item(s)

preprint2020arXiv

A simple variational quantum Monte Carlo-effective mass approach for excitons and trions in quantum dots

A computational model is presented to calculate the ground state energy of neutral and charged excitons confined in semiconductor quantum dots. The model is based on the variational Quantum Monte Carlo method and effective mass Hamiltonians. Through an iterative Newton-Rhapson process, minimizing the local energy, and (optional) parallelization of random walkers, fast and accurate estimates of both confinement and Coulomb binding energies can be obtained in standard desktop computers. To illustrate the reach of the model, we provide Fortran programs and illustrative calculations for colloidal CdSe nanoplatelets with large lateral dimensions and dielectric confinement, where electronic correlations are strong. The results compare well with exact variational calculations and largely outperform configuration interaction calculations in computational efficiency.

preprint2020arXiv

Dielectric Confinement Enables Molecular Coupling in Stacked Colloidal Nanoplatelets

We show theoretically that carriers confined in semiconductor colloidal nanoplatelets (NPLs) sense the presence of neighbor, cofacially stacked NPLs in their energy spectrum. When approaching identical NPLs, the otherwise degenerate energy levels redshift and split, forming (for large stacks) minibands of several meV width. Unlike in epitaxial structures, the molecular behavior does not result from quantum tunneling but from changes in the dielectric confinement. The associated excitonic absorption spectrum shows a rich structure of bright and dark states, whose optical activity and multiplicity can be understood from reflection symmetry and Coulomb tunneling. We predict spectroscopic signatures which should confirm the formation of molecular states, whose practical realization would pave the way to the development of nanocrystal chemistry based on NPLs.

preprint2016arXiv

Electronic Origin of Linearly Polarized Emission in CdSe/CdS Dot-in-Rod Heterostructures

Seeded CdSe/CdS nanorods exhibit intense polarized emission along the rod main axis. The degree of linear polarization cannot be explained by dielectric effects alone, an additional electronic contribution is present whose nature has not been settled up to date. Using multi-band k.p theory, we analyse the potential influence of several factors affecting excitonic emission and show that shear strain is the main electronic mechanism promoting linear polarization. It favors energetically light hole excitons over heavy hole ones, via deformation potential, and makes their radiative recombination faster via piezoelectricity. Implications of this mechanism are that linear emission can be enhanced by growing long but thin CdS shells around large, prolate CdSe cores, which indeed supports and rationalizes recent experimental findings. Together with the well-known dielectric effects, these results pave the way for controlled degree of linear polarization in dot-in-rods through dedicated structural design.

preprint2015arXiv

Aharonov-Bohm oscillations and electron gas transitions in hexagonal core-shell nanowires with an axial magnetic field

We use spin-density-functional theory within an envelope function approach to calculate electronic states in a GaAs/InAs core-shell nanowire pierced by an axial magnetic field. Our fully 3D quantum modeling includes explicitly the description of the realistic cross-section and composition of the sample, and the electrostatic field induced by external gates in two different device geometries, gate-all-around and back-gate. At low magnetic fields, we investigate Aharonov-Bohm oscillations and signatures therein of the discrete symmetry of the electronic system, and we critically analyze recent magnetoconductance observations. At high magnetic fields we find that several charge and spin transitions occur. We discuss the origin of these transitions in terms of different localization and Coulomb regimes and predict their signatures in magnetoconductance experiments.

preprint2015arXiv

Symmetry induced hole-spin mixing in quantum dot molecules

We investigate theoretically the spin purity of single holes confined in vertically coupled GaAs/AlGaAs quantum dots (QDs) under longitudinal magnetic fields. A unique behavior is observed for triangular QDs, by which the spin is largely pure when the hole is in one of the dots, but it becomes strongly mixed when an electric field is used to drive it into molecular resonance. The spin admixture is due to the valence band spin-orbit interaction, which is greatly enhanced in C3h symmetry environments. The strong yet reversible electrical control of hole spin suggests that molecules with C3-symmetry QDs, like those obtained with [111] growth, can outperform the usual C2-symmetry QDs obtained with [001] growth for the development of scalable qubit architectures.

preprint2015arXiv

Theory of electrons, holes and excitons in GaAs polytype quantum dots

Single and multi-band (Burt-Foreman) k.p Hamiltonians for GaAs crystal phase quantum dots are developed and used to assess ongoing experimental activity on the role of such factors as quantum confinement, spontaneous polarization, valence band mixing and exciton Coulomb interaction. Spontaneous polarization is found to be a dominating term. Together with the control of dot thickness [Vainorious Nano Lett. 15, 2652 (2015)] it enables wide exciton wavelength and lifetime tunability. Several new phenomena are predicted for small diameter dots [Loitsch et al. Adv. Mater. 27, 2195 (2015)], including non-heavy hole ground state, strong hole spin admixture and a type-II to type-I exciton transition, which can be used to improve the absorption strength and reduce the radiative lifetime of GaAs polytypes.

preprint2014arXiv

The Role of Alternance Symmetry in Magnetoconductance

We show that the direction of coherent electron transport across a cyclic system of quantum dots or a cyclic molecule can be modulated by an external magnetic field if the cycle has an odd number of hopping sites, but the transport becomes completely symmetric if the number is even. These contrasting behaviors, which remain in the case of interacting electrons, are a consequence of the absence or presence of alternance symmetry in the system. These findings are relevant for the design of nanocircuits based on coupled quantum dots or molecular junctions.

preprint2013arXiv

Magnetic field implementation in multiband k.p Hamiltonians of holes in semiconductor heterostructures

We propose an implementation of external homogeneous magnetic fields in k$\cdot$p Hamiltonians for holes in heterostructures, in which we made use of the minimal coupling prior to introduce the envelope function approximation. Illustrative calculations for holes in InGaAs quantum dot molecules show that the proposed Hamiltonian outperforms standard Luttinger model [Physical Review 102, 1030 (1956)] describing the experimentally observed magnetic response. The present implementation culminates our previous proposal [Phys. Rev. B 82, 155307 (2010)].

preprint2013arXiv

Spin-orbit induced hole spin relaxation in InAs and GaAs quantum dots

We study the effect of valence band spin-orbit interactions on the acoustic phonon assisted spin relaxation of holes confined in quantum dots. Heavy hole-light hole (hh-lh) mixing and all the spin-orbit terms arising from zinc-blende bulk inversion asymmetry (BIA) are considered on equal footing in a fully 3D Hamiltonian. We show that hh-lh mixing and BIA have comparable contributions to the hole spin relaxation in self-assembled QDs, but BIA becomes dominant in gated QDs. The dependence of the hole spin relaxation on the QD geometry and spin splitting energy is drastically different from that of electrons, with a non-monotonic behavior which results from the interplay between SOI terms. Our results reconcile contradictory predictions of previous theoretical works and are consistent with experiments.

preprint2011arXiv

Emission spectrum of quasi-resonant laterally coupled quantum dots

We calculate the emission spectrum of neutral and charged excitons in a pair of laterally coupled InGaAs quantum dots with nearly degenerate energy levels. As the interdot distance decreases, a number of changes take place in the emission spectrum which can be used as indications of molecular coupling. These signatures ensue from the stronger tunnel-coupling of trions as compared to that of neutral excitons.

preprint2011arXiv

The excitonic resonance in semiconductor-metal nano-hybrids

We use a configuration interaction approach within the envelope function approximation to study the nature of the excitonic resonance in nano-hybrids, composite nanoparticles (NPs) combining a semiconducting and a metallic segment in contact. With reference to recent experimental reports, we specifically study CdS-based nanorods with metallic NPs deposited at the tips (matchstick) or metallic coatings (core-shell). The excitonic states are computed taking into account both the renormalization of the electron-hole interaction and self-energy effects induced by the the metallic segment on the electron-hole pair, as well as by the dielectric environment, through an induced charge numerical approach. In neutral matchstick structures the metal NP has only a minor influence (~1 meV) on the excitonic states. When the metallic NP is charged the exciton becomes rapidly redshifted and spatially indirect. In contrast, in neutral core-shell structures the exciton energy redshifts by tens of meV

preprint2010arXiv

Dielectric confinement of excitons in type-I and type-II semiconductor nanorods

We theoretically study the effect of the dielectric environment on the exciton ground state of CdSe and CdTe/CdSe/CdTe nanorods. We show that insulating environments enhance the exciton recombination rate and blueshift the emission peak by tens of meV. These effects are particularly pronounced for type-II nanorods. In these structures, the dielectric confinement may even modify the spatial distribution of electron and hole charges. A critical electric field is required to separate electrons from holes, whose value increases with the insulating strength of the surroundings.

preprint2006arXiv

Vertically coupled double quantum rings at zero magnetic field

Within local-spin-density functional theory, we have investigated the `dissociation' of few-electron circular vertical semiconductor double quantum ring artificial molecules at zero magnetic field as a function of inter-ring distance. In a first step, the molecules are constituted by two identical quantum rings. When the rings are quantum mechanically strongly coupled, the electronic states are substantially delocalized, and the addition energy spectra of the artificial molecule resemble those of a single quantum ring in the few-electron limit. When the rings are quantum mechanically weakly coupled, the electronic states in the molecule are substantially localized in one ring or the other, although the rings can be electrostatically coupled. The effect of a slight mismatch introduced in the molecules from nominally identical quantum wells, or from changes in the inner radius of the constituent rings, induces localization by offsetting the energy levels in the quantum rings. This plays a crucial role in the appearance of the addition spectra as a function of coupling strength particularly in the weak coupling limit.