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Ming-Liang Zhang

Ming-Liang Zhang appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.stat-mech Computer Vision cond-mat.dis-nn cond-mat.mes-hall cond-mat.mtrl-sci

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preprint2022arXiv

Plane Geometry Diagram Parsing

Geometry diagram parsing plays a key role in geometry problem solving, wherein the primitive extraction and relation parsing remain challenging due to the complex layout and between-primitive relationship. In this paper, we propose a powerful diagram parser based on deep learning and graph reasoning. Specifically, a modified instance segmentation method is proposed to extract geometric primitives, and the graph neural network (GNN) is leveraged to realize relation parsing and primitive classification incorporating geometric features and prior knowledge. All the modules are integrated into an end-to-end model called PGDPNet to perform all the sub-tasks simultaneously. In addition, we build a new large-scale geometry diagram dataset named PGDP5K with primitive level annotations. Experiments on PGDP5K and an existing dataset IMP-Geometry3K show that our model outperforms state-of-the-art methods in four sub-tasks remarkably. Our code, dataset and appendix material are available at https://github.com/mingliangzhang2018/PGDP.

preprint2011arXiv

Approximate Theory of Temperature Coefficient of Resistivity of Amorphous Semiconductors

In this paper, we develop an approximate theory of the temperature coefficient of resistivity (TCR) and conductivity based upon the recently proposed Microscopic Response Method. By introducing suitable approximations for the lattice dynamics, localized and extended electronic states, we produce new explicit forms for the conductivity and TCR, which depend on easily accessible material parameters. The theory is in reasonable agreement with experiments on a-Si:H and a-Ge:H. A long-standing puzzle, a \textquotedblleft kink\textquotedblright\ in the experimental $% \log_{10}σ$ vs. 1/T curve, is predicted by the theory and attributed to localized to extended transitions, which have not been properly handled in earlier theories.

preprint2011arXiv

Temperature Coefficient of Resistivity in Amorphous Semiconductors

By invoking the microscopic response method in conjunction with a reasonable set of approximations, we obtain new explicit expressions for the electrical conductivity and temperature coefficient of resistivity (TCR) in amorphous semiconductors, especially a-Si:H and a-Ge:H. The predicted TCR for n-doped a-Si:H and a-Ge:H is in agreement with experiments. The conductivity from the transitions from a localized state to an extended state (LE) is comparable to that from the transitions between two localized states (LL). This resolves a long-standing anomaly, a "kink" in the experimental $\log_{10}σ$ vs. T$^{-1}$ curve.

preprint2010arXiv

Phonon driven transport in amorphous semiconductors: Transition probabilities

Starting from Holstein's work on small polaron hopping, the evolution equations for localized and extended states in the presence of atomic vibrations are systematically derived for an amorphous semiconductor. The transition probabilities are obtained for transitions between all combinations of localized and extended states. For any transition process involving a localized state, the activation energy is not simply the energy difference between the final and initial states; the reorganization energy of atomic configuration is also included as an important part of the activation energy (Marcus form). The activation energy for the transitions between localized states decreases with rising temperature and leads to the Meyer-Neldel rule. The predicted Meyer-Neldel temperatures are consistent with observations in several materials. The computed field-dependence of conductivity agrees with experimental data. The present work suggests that the upper temperature limit of variable range hopping is proportional to the frequency of first peak of phonon spectrum. We have also improved the description of the photocurrent decay at low temperatures. Analysis of the transition probability from an extended state to a localized state suggests that there exists a short-lifetime belt of extended states inside the conduction band or valence band.