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Mildred Dresselhaus

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cond-mat.mtrl-sci cond-mat.mes-hall math-ph math.MP

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preprint2016arXiv

Fermi energy dependence of first- and second-order Raman spectra in graphene: Kohn anomaly and quantum interference effect

Intensity of the first- and the second-order Raman spectra are calculated as a function of the Fermi energy. We show that the Kohn anomaly effect, i.e., phonon frequency renormalization, in the first-order Raman spectra originates from the phonon renormalization by the interband electron-hole excitation, whereas in the second-order Raman spectra, a competition between the interband and intraband electron-hole excitations takes place. By this calculation, we confirm the presence of different dispersive behaviors of the Raman peak frequency as a function of the Fermi energy for the first- and the second-order Raman spectra, as observed in experiments. Moreover, the calculated results of the Raman intensity sensitively depend on the Fermi energy for both the first- and the second-order Raman spectra. These results thus also show the importance of quantum interference effect phenomena.

preprint2015arXiv

The Renaissance of Black Phosphorus

One hundred years after its first successful synthesis in the bulk form in 1914, black phosphorus (black P) was recently rediscovered from the perspective of a two-dimensional (2D) layered material, attracting tremendous interest from condensed matter physicists, chemists, semiconductor device engineers and material scientists. Similar to graphite and transition metal dichalcogenides (TMDs), black P has a layered structure but with a unique puckered single layer geometry. Because the direct electronic band gap of thin film black P can be varied from 0.3 to around 2 eV, depending on its film thickness, and because of its high carrier mobility and anisotropic in-plane properties, black P is promising for novel applications in nanoelectronics and nanophotonics different from graphene and TMDs. Black P as a nanomaterial has already attracted much attention from researchers within the past year. Here, we offer our opinions on this emerging material with the goal of motivating and inspiring fellow researchers in the 2D materials community and the broad readership of PNAS to discuss and contribute to this exciting new field. We also give our perspectives on future 2D and thin film black P research directions, aiming to assist researchers coming from a variety of disciplines who are desirous of working in this exciting research field.

preprint2014arXiv

Anisotropic Transport for Parabolic, Non-Parabolic and Linear Bands of Different Dimensions

Anisotropic thermoelectrics is a very interesting topic among recent research. The transport distribution function plays the central role on modeling the anisotropic thermoelectrics. The methodology of numerical integrations is used in previous literature on anisotropic transport, which does not capture the sharp change of transport distribution function and density of states at band edges. However, the sharp change of transport distribution function and density of states at band edges plays the central role in enhancing the thermoelectric performance. Thus, an analytical methodology that is robust on modeling the sharp change of transport distribution function and density of states at a band edges is needed. To our best knowledge, there has not been a paper giving the systematic study on the analytical models of anisotropic transport distribution function for different kinds of band valleys in different dimensions under different assumptions. Therefore, the main focus of this present paper is to develop such a robust analytical methodology on modeling the anisotropic transport distribution function. So our contributions are 1) we have developed a systematic method on model the anisotropic transport distribution function, for 3D, 2D and 1D systems, in parabolic, non-parabolic and linear dispersion relations, under both the relaxation time approximation and the mean free path approximation; 2) we have found that the Onsage's relation of transport can be violated under certain conditions; 3) we have compared our newly developed methodology with the traditional used numerical methodology.

preprint2014arXiv

Building the Principle of Thermoelectric ZT Enhancement

Thermoelectrics involves both the generation of electrical power from heat flow, and the efficient refrigeration using electricity, which has been intensively focused on for two decades. The performance of thermoelectric power generation and refrigeration has been improved by many proposals since 1993, which is, however, the currently not yet in an industrially competitive level. The development of the entire filed has come to a puzzling point, where the physical reason of why this energy conversion efficiency enhancing problem is barely soluble, and the physical answer of how it should be re-formed to be soluble are the most urgent questions in this field. We here answer these questions and provide the guidance on how to design the of thermoelectric figure of merit enhancement in various systems using different approaches for future researches. We start from criticizing the current way of expression the thermoelectric figure of merit ZT and then introduce the new concept of pseudo-ZT, which can finally make it clear what variables really decides ZT, and clarify the historical misunderstanding of many thermoelectric performance enhancing proposals. Then we explore the most important question on what variables really enhance ZT, and give the contemporary researchers a new guidance on what is the correct direction of thermoelectric performance improving for various systems.

preprint2013arXiv

Mechanics and Tunable Bandgap by Straining in Single-Layer Hexagonal Boron-Nitride

Current interest in two-dimensional materials extends from graphene to others systems like single-layer hexagonal boron-nitride (h-BN), for the possibility of making heterogeneous structures to achieve exceptional properties that cannot be realized in graphene.The electrically insulating h-BN and semi-metal graphene may open good opportunities to realize a semiconductor by manipulating the morphology and composition of such heterogeneous structures.Here we report the mechanical properties of h-BN and its band structures tuned by mechanical straining by using the density functional theory calculations.The elastic properties, both the Young's modulus and bending rigidity for h-BN, are isotropic.We reveal that there is a bi-linear dependence of band gap on the applied tensile strains in h-BN. Mechanical strain can tune single-layer h-BN from an insulator to a semiconductor, with a band gap in the 4.7eV to 1.5eV range.