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Researcher profile

Eddwi H. Hasdeo

Eddwi H. Hasdeo contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.stat-mechphysics.app-ph

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Published work

6 published item(s)

preprint2022arXiv

Spin-tunable thermoelectric performance in monolayer chromium pnictides

Historically, finding two-dimensional (2D) magnets is well known to be a difficult task due to instability against thermal spin fluctuations. Metals are also normally considered poor thermoelectric (TE) materials. Combining intrinsic magnetism in two dimensions with conducting properties, one may expect to get the worst for thermoelectrics. However, we will show this is not always the case. Here, we investigate spin-dependent TE properties of monolayer chromium pnictides (CrX, where X = P, As, Sb, and Bi) using first-principles calculations of electrons and phonons, along with Boltzmann transport formalism under energy-dependent relaxation time approximation. All the CrX monolayers are dynamically stable and they also exhibit half metallicity with ferromagnetic ordering. Using the spin-valve setup with antiparallel spin configuration, the half metallicity and ferromagnetism in monolayer CrX enable manipulation of spin degrees of freedom to tune the TE figure of merit (ZT). At optimized chemical potential and operating temperature of 500 K, the maximum ZT values (= 0.22, 0.12, and 0.09) with the antiparallel spin-valve setup in CrAs, CrSb, and CrBi improve up to almost twice the original values (ZT = 0.12, 0.08, and 0.05) without the spin-valve configuration. Only in CrP, which is the lightest species and less spin-polarized among CrX, the maximum ZT (= 0.34) without the spin-valve configuration is larger than that (= 0.19) with the spin-valve one. We also find that, at 500 K, all the CrX monolayers possess exceptional TE power factors of about 0.02-0.08 W/m.K2, which could be one of the best values among 2D conductors.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Thermoelectric properties of semiconducting materials with parabolic and pudding-mold band structures

We theoretically investigate the thermoelectric properties of semiconducting (gapped) materials by varying the degrees of polynomials in their energy dispersion relations, in which either the valence or conduction energy dispersion depends on the wave vector raised to the power of two, four, and six. The thermoelectric transport coefficients such as the Seebeck coefficient, electrical conductivity, and thermal conductivity are calculated within the linearized Boltzmann transport theory combined with the relaxation time approximation. We consider various effects such as band gaps, dimensionalities, and dispersion powers to understand the conditions that can give the optimal thermoelectric efficiency or figure of merit ($ZT$). Our calculations show that the so-called pudding-mold band structure produces larger electrical and thermal conductivities than the parabolic band, but no significant difference is found in the Seebeck coefficients of the pudding-mold and parabolic bands. Furthermore, we find that a high $ZT$ can be obtained by tuning the band gap of the material to an optimum value simultaneously with breaking the band symmetry. The largest $ZT$ is found in a combination of two-contrasting polynomial powers in the dispersion relations of valence and conduction bands. This band asymmetry also shifts the charge neutrality away from the undoped level and allows optimal $ZT$ to be located at a smaller chemical potential. With some reasonable values of thermal conductivity parameters, the maximum $ZT$ for the bulk systems can be larger than 1, while for one-dimensional systems it can even reach almost 4. We expect this work to trigger high-throughput calculations for screening of potential thermoelectric materials combining various polynomial powers in the energy dispersion relations of semiconductors.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Kerr and Faraday rotations in topological flat and dispersive band structures

Integer quantum Hall (IQH) states and quantum anomalous Hall (QAH) states show the same static (dc) response but distinct dynamical (ac) response. In particular, the ac anomalous Hall conductivity profile $σ_{yx}(ω)$ is sensitive to the band shape of QAH states. For example, dispersive QAH bands shows resonance profile without a sign change at the band gap while the IQH states shows the sign change resonance at the cyclotron energy. We argue by flattening the dispersive QAH bands, $σ_{yx}(ω)$ should recover to that of flat Landau bands in IQH, thus it is necessary to know the origin of the sign change. Taking a topological lattice model with tunable bandwidth, we found that the origin of the sign change is not the band gap but the Van Hove singularity energy of the QAH bands. In the limit of small bandwidth, the flat QAH bands recovers $σ_{yx}(ω)$ of the IQH Landau bands. Because of the Hall response, these topological bands exhibit giant polarization rotation and ellipticity in the reflected waves (Kerr effect) and rotation in the order of fine structure constant in the transmitted waves (Faraday effect) with profile resembles $σ_{yx}(ω)$. Our results serve as a simple guide to optical characterization for topological flat bands.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Electron hydrodynamics of anomalous Hall materials

We study two-dimensional electron systems in the hydrodynamic regime. We show that a geometrical Berry curvature modifies the effective Navier-Stokes equation for viscous electron flow in topological materials. For small electric fields, the Hall current becomes negligible compared to the viscous longitudinal current. In this regime, we highlight an unconventional Poiseuille flow with an asymmetric profile and a deviation of the maximum of the current from the center of the system. In a two-dimensional infinite geometry, the Berry curvature leads to current whirlpools and an asymmetry of potential profile. This phenomenon can be probed by measuring the asymmetric non-local resistance profile.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Strain Effects on Band Structure and Dirac Nodal-line Morphology of ZrSiSe

The Dirac nodal-line semimetals (DNLS) are new promising materials for technological applications due to its exotic properties, which originate from band structures dispersion and nodal-line behavior. We report a study on effects of several possibilities of strains in ZrSiSe DNLS on band structure dispersion and nodal-line behavior through the means of the density functional theory (DFT) calculations. We found that the Dirac nodal-line of ZrSiSe is robust to all strain with reasonable magnitude. Although, there are significant changes in gap, amplitude, and energy relative to Fermi energy. We also found the effective strains to tune the nodal-line and band structures are equi-biaxial tensile, uniaxial (100) tensile, and uniaxial (110) tensile strain.

0 citations0 reviewsNo code linkedOpen access
preprint2018arXiv

Intra-cell dynamics and cyclotron motion without magnetic field

Intra-cell motion endows rich non-trivial phenomena to a wide variety of quantum materials. The most prominent example is a transverse current in the absence of a magnetic field (i.e. the anomalous Hall effect). Here we show that, in addition to a dc Hall effect, anomalous Hall materials possess circulating currents and cyclotron motion without magnetic field. These are generated from the intricate wavefunction dynamics within the unit cell, and correspond to interband transitions (coherences) in much the same way that cyclotron resonances arise from inter-Landau level transitions in magneto-optics. Curiously, anomalous cyclotron motion exhibits an intrinsic decay in time (even in pristine materials) displaying a characteristic power law decay. This reveals an intrinsic dephasing similar to that of inhomogeneous broadening of spinors. Circulating currents can manifest as the emission of circularly polarized light pulses in response to incident linearly polarized (pulsed) electric field, and provide a direct means of interrogating the intra-unit-cell dynamics of quantum materials.

0 citations0 reviewsNo code linkedOpen access