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Michel Cote

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Published work

3 published item(s)

preprint2010arXiv

High-energy excitonic effects in graphite and graphene

We present ab initio many-body calculations of the optical absorption in bulk graphite, graphene and bilayer of graphene. Electron-hole interaction is included solving the Bethe-Salpeter equation on top of a GW quasiparticle electronic structure. For all three systems, we observe strong excitonic effects at high energy, well beyond the continuum of π-> π* transitions. In graphite, these affect the onset of σ-> σ* transitions. In graphene, we predict an excitonic resonance at 8.3 eV arising from a background continuum of dipole forbidden transitions. In the graphene bilayer, the resonance is shifted to 9.6 eV. Our results for graphite are in good agreement with experiments.

preprint2009arXiv

Doping of C$_{60}$-induced electronic states in BN nanopeapods

We report the results of \textit{ab initio} simulations of the electronic properties of a chain of C$_{60}$ molecules encapsulated in a boron nitride nanotube - so called BN-nanopeapod. It is demonstrated that this structure can be effectively doped by depositing potassium atoms on the external wall of the BN-nanotube. The resulting material becomes a true metallic one-dimensional crystal, where the conduction states are formed solely by the fullerene chain. At the doping rate of one K atom per C$_{60}$ molecule, the system shows the density of states at the Fermi level considerably higher than in any of the fullerene crystals presently made. This makes the doped BN-peapod structure an interesting candidate to study a possible superconducting state.

preprint2009arXiv

Large electronic bandwidth in solution-processable pyrene crystals: The role of close-packed crystal structure

We examine the interdependence of structural and electronic properties of two substituted pyrene crystals by means of combined spectroscopic probes and density-functional theory calculations. One derivative features n-hexyl side groups, while the other one contains branched silanyl groups. Both derivatives form triclinic crystal structures when grown from solution, but the electronic dispersion behavior is significantly different due to differences in $π$-$π$ overlap along the $a$ crystal axis. Both systems display dispersion of 0.40-0.45 eV in the valence band, suggesting a high intrinsic hole mobility. However, the dispersion is primarily along the a-axis in the silanyl-substituted derivative, but less aligned with this crystal axis in the hexyl-substituted material. This is a direct consequence of the diferences in co-facial $π$ electron overlap revealed by the crystallographic studies. We find that photophysical defects, ascribed to excimer-like states, point to the importance of localized trap states. Substituted pyrenes are useful model systems to unravel the interplay of crystal structure and electronic properties in organic semiconductors.