Researcher profile

Gabrielle Simard

Gabrielle Simard contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2015arXiv

Prospects for Delensing the Cosmic Microwave Background for Studying Inflation

A detection of excess cosmic microwave background (CMB) B-mode polarization on large scales allows the possibility of measuring not only the amplitude of these fluctuations but also their scale dependence, which can be parametrized as the tensor tilt $n_T$. Measurements of this scale dependence will be hindered by the secondary B-mode polarization anisotropy induced by gravitational lensing. Fortunately, these contaminating B modes can be estimated and removed with a sufficiently good estimate of the intervening gravitational potential and a good map of CMB E-mode polarization. We present forecasts for how well these gravitational lensing B modes can be removed, assuming that the lensing potential can be estimated either internally from CMB data or using maps of the cosmic infrared background (CIB) as a tracer. We find that CIB maps are as effective as CMB maps for delensing at the noise levels of the current generation of CMB experiments, while the CMB maps themselves will ultimately be best for delensing at polarization noise below $Δ_P$=1 $μ$K-arcmin. At this sensitivity level, CMB delensing will be able to measure $n_T$ to an accuracy of 0.02 or better, which corresponds to the tensor tilt predicted by the consistency relation for single-field slow-roll models of inflation with $r=0.2$. However, CIB-based delensing will not be sufficient for constraining $n_T$ in simple inflationary models.

preprint2009arXiv

Large electronic bandwidth in solution-processable pyrene crystals: The role of close-packed crystal structure

We examine the interdependence of structural and electronic properties of two substituted pyrene crystals by means of combined spectroscopic probes and density-functional theory calculations. One derivative features n-hexyl side groups, while the other one contains branched silanyl groups. Both derivatives form triclinic crystal structures when grown from solution, but the electronic dispersion behavior is significantly different due to differences in $π$-$π$ overlap along the $a$ crystal axis. Both systems display dispersion of 0.40-0.45 eV in the valence band, suggesting a high intrinsic hole mobility. However, the dispersion is primarily along the a-axis in the silanyl-substituted derivative, but less aligned with this crystal axis in the hexyl-substituted material. This is a direct consequence of the diferences in co-facial $π$ electron overlap revealed by the crystallographic studies. We find that photophysical defects, ascribed to excimer-like states, point to the importance of localized trap states. Substituted pyrenes are useful model systems to unravel the interplay of crystal structure and electronic properties in organic semiconductors.