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Michael O. Ogunbunmi

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4works
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4 publications

preprint2022arXiv

Giant thermoelectric power factor anisotropy in PtSb1.4_{1.4}Sn0.6_{0.6}

We report giant anisotropy in thermoelectric power factor (S2σS^2σ) of marcasite structure-type PtSb1.4_{1.4}Sn0.6_{0.6}. PtSb1.4_{1.4}Sn0.6_{0.6}, synthesized using ambient pressure flux growth method upon mixing Sb and Sn on the same atomic site, is a new phase different from both PtSb2_2 and PtSn2_2 that crystallize in the cubic Pa3ˉPa\bar{3} pyrite and Fm3ˉmFm\bar{3}m fluorite unit cell symmetry, respectively. Giant difference in S2σS^2σ for heat flow applied along different principal directions of the orthorhombic unit cell mostly stems from anisotropic Seebeck coefficients.

preprint2022arXiv

Polaronic Conductivity in Cr2_2Ge2_2Te6_6 Single Crystals

Intrinsic, two-dimensional (2D) ferromagnetic semiconductors are an important class of materials for spin-charge conversion applications. Cr2_2Ge2_2Te6_6 retains long-range magnetic order in bilayer at cryogenic temperatures and shows complex magnetic interactions with considerable magnetic anisotropy. Here, we performed a series of structural, magnetic, X-ray scattering, electronic, thermal transport and first-principles calculation studies which reveal that localized electronic charge carriers in Cr2_2Ge2_2Te6_6 are dressed by surrounding lattice and are involved in polaronic transport via hopping that is sensitive on details of magnetocrystalline anisotropy. This opens possibility for manipulation of charge transport in Cr2_2Ge2_2Te6_6 - based devices by electron-phonon- and spin-orbit coupling-based tailoring of polaron properties.

preprint2022arXiv

The Highly Disordered Zintl Phase Ca10_{10}GdCdSb9_9 -- New Example of a p-type Semiconductor with Remarkable Thermoelectric Properties

Ca10_{10}GdCdSb9_9 is a new Zintl phase with a large unit cell volume (~2500 Å3) and a very complex, disordered structure, which can drive the realization of ultralow thermal conductivity in this material. The measured Seebeck coefficient, αα, for single-crystalline Ca10_{10}GdCdSb9_9 approaches 350 μμV/K at 600 K. The experimentally determined electrical resistivity of Ca10_{10}GdCdSb9_9 is very low, leading to a remarkably high-power factor PF of 23.2 μμW/cm.K2^2 at 460 K. The extraordinary PF value in this material, higher than those of the currently known state-of-the-art materials within the same temperature range, suggests that the Ca10_{10}RECdSb9_9 material system (RE = rare earth metal) could serve as a viable playground to harnessing new efficient thermoelectric generators.

preprint2020arXiv

Nonmagnetic ground state, Crystal field effects and Heavy-fermion behaviour in the Remeika Phase: Pr3_3Ir4_4Ge13_{13}

We report the magnetic, electronic and transport properties of the quasi-skutterudite compound Pr3_3Ir4_4Ge13_{13} by means of magnetic susceptibility χ(T)χ(T), electrical resistivity ρ(T)ρ(T), specific heat Cp(T)C_p(T), thermal conductivity κ(T)κ(T), thermoelectric power S(T)S(T) and Hall coefficient RH(T)R_\mathrm{H}(T) measurements. Pr3_3Ir4_4Ge13_{13} does not show any phase transition down to 1.9 K. Magnetic, and specific measurements show that the system possesses a crystal electric field singlet ground state that is separated from the first excited state by about 37 K. ρ(T)ρ(T) shows a negative temperature coefficient of resistance for the whole temperature range studied and which can be explained in terms of Mott's impurity band conduction mechanism. RH(T)R_\mathrm{H}(T) measurements show that Pr3_3Ir4_4Ge13_{13} is a low-carrier density semimetal and its transport properties indicate a metallic-non metallic cross over behaviour. Large Seebeck values were observed for the entire temperature range of investigation, and the analysis of temperature variation of SS and S/TS/T showed no sign of strong correlation between the Pr 4f2f^2 and conduction electron states near Fermi level. A large Sommerfeld coefficient, γ=150γ= 150~mJ/(mol K2^2) indicates the formation of a moderate heavy-fermion state emerging from the dynamical crystal field fluctuations.

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