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Source author record

Michael G. Moore

Michael G. Moore appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.quant-gasquant-phcond-mat.mtrl-sciphysics.optics

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Published work

4 published item(s)

preprint2011arXiv

Resonant Matter Wave Amplification in Mean Field Theory

We develop a Green's function based mean-field theory for coherent mixing of matter- and light-waves. To demonstrate the utility of this approach, we analyse a co-propagating Raman matter-wave amplifier. We find that for a given laser intensity, a significantly faster amplification process can be achieved employing resonant rather than off-resonance driving. The ratio of the matter-wave gain to atom loss-rate due to spontaneous emission is given by the optical depth of the sample, and is the same both on- and off-resonance. Furthermore, we show that for short-times, the single-mode approximation for the matter-waves gives exact agreement with the full spatial dynamics. For long times, the off-resonant case shows suppressed amplification due to a spatially inhomogenous AC Stark shift associated with laser depletion. This suppression is absent on-resonance, where the AC Stark shift is absent.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Nonlinear phase-dynamics in a driven Bosonic Josephson junction

We study the collective dynamics of a driven two mode Bose-Hubbard model in the Josephson interaction regime. The classical phase-space is mixed, with chaotic and regular components, that determine the dynamical nature of the fringe-visibility. For weak off-resonant drive, where the chaotic component is small, the many-body dynamics corresponds to that of a Kapitza pendulum, with the relative-phase $φ$ between the condensates playing the role of the pendulum angle. Using a master equation approach we show that the modulation of the inter-site potential barrier stabilizes the $φ=π$ 'inverted pendulum' coherent state, and protects the fringe visibility.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Optimal Gaussian squeezed states for atom-interferometry in the presence of phase diffusion

We optimize the signal-to-noise ratio of a Mach-Zehnder atom interferometer with Gaussian squeezed input states, in the presence interactions. For weak interactions, our results coincide with Phys. Rev. Lett. {\bf 100}, 250406 (2008), with optimal initial number-variance $σ_o\propto N^{1/3}$ and optimal signal-to-noise ratio $s_o\propto N^{2/3}$ for total atom number $N$. As the interaction strength $u$ increases past unity, phase-diffusion becomes dominant, leading to a transition in the optimal squeezing from initial number-squeezing to initial {\it phase}-squeezing with $σ_o\propto\sqrt{uN}$ and $s_o\propto\sqrt{N/u}$ shot-noise scaling. The initial phase-squeezing translates into hold-time number-squeezing, which is less sensitive to interactions than coherent states and improves $s_o$ by a factor of $\sqrt{u}$.

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preprint2010arXiv

Trionic Optical Potential for Electrons in Semiconductors

Laser-induced optical potentials for atoms have led to remarkable advances in precision measurement, quantum information, and towards addressing fundamental questions in condensed matter physics. Here, we describe analogous optical potentials for electrons in quantum wells and wires that can be generated by optically driving the transition between a single electron and a three-body electron-exciton bound state, known as a trion. The existence of a bound trion state adds a term to the ac Stark shift of the material proportional to the light intensity at the position of the electron. According to our theoretical calculations, this shift can be large relative to the thermal equilibrium temperature of the electron, resulting in a relatively strong optical potential that could be used to trap, guide, and manipulate individual electrons within a semiconductor quantum well or wire. These potentials can be thought of as artificial nano-structures on the scale of 100 nm that can be spin-dependent and reconfigurable in real-time. Our results suggest the possibility of integrating ultrafast optics and gate voltages in new resolved-carrier semiconductor opto-electronic devices, with potential applications in fields such as nano-electronics, spintronics, and quantum information processing

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