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Michael C. Downer

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Published work

2 published item(s)

preprint2022arXiv

Two-Photon Excitation Spectroscopy of Silicon Quantum Dots and Ramifications for Bio-Imaging

Two-photon excitation in the near-infrared (NIR) of colloidal nanocrystalline silicon quantum dots (nc-SiQDs) with photoluminescence also in the NIR has the potential to open up new opportunities in the field of deep biological imaging. Spectra of the degenerate two-photon absorption (2PA) cross section of colloidal nc-SiQDs are measured using two-photon excitation over a spectral range $1.46 < \hbar ω< 1.91$ eV (wavelength $850 > λ> 650$ nm) above the two-photon band gap $E_g^{(QD)}/2$, and at a representative photon energy $\hbar ω= 0.99$ eV ($λ= 1250$ nm) below this gap. Two-photon excited photoluminescence (2PE-PL) spectra of nc-SiQDs with diameters $d = 1.8 \pm 0.2$ and $d = 2.3 \pm 0.3$ nm, each passivated with 1-dodecene and dispersed in toluene, are calibrated in strength against 2PE-PL from a known concentration of Rhodamine B dye in methanol. The 2PA cross section is observed to be smaller for the smaller diameter nanocrystals and the onset of 2PA is observed to be blueshifted from the two-photon indirect band gap of bulk Si, as expected for quantum confinement of excitons. The efficiencies of nc-SiQDs for bio-imaging using 2PE-PL are simulated in various biological tissues and compared to other quantum dots and molecular fluorophores and found to be superior at greater depths.

preprint2020arXiv

Atomic-Scale Defect Detection by Nonlinear Light Scattering and Localization

Hetero-epitaxial crystalline films underlie many electronic and optical technologies but are prone to forming defects at their hetero-interfaces. Atomic-scale defects such as threading dislocations that propagate into a film impede the flow of charge carriers and light degrading electrical-optical performance of devices. Diagnosis of subsurface defects traditionally requires time consuming invasive techniques such as cross sectional transmission electron microscopy. Using III-V films grown on Si, we have demonstrated noninvasive, bench-top diagnosis of sub-surface defects by optical second-harmonic scanning probe microscope. We observed a high-contrast pattern of sub-wavelength hot spots caused by scattering and localization of fundamental light by defect scattering sites. Size of these observed hotspots are strongly correlated to the density of dislocation defects. Our results not only demonstrate a global and versatile method for diagnosing sub-surface scattering sites but uniquely elucidate optical properties of disordered media. An extension to third harmonics would enable irregularities detection in non-X(2) materials making the technique universally applicable.