Researcher profile

Michał Leszczyński

Michał Leszczyński contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-sci cond-mat.stat-mech

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preprint2016arXiv

Hybrid reciprocal lattice: application to layer stress appointment in GaAlN/GaN(0001) systems with patterned substrates

Epitaxy of semiconductors is a process of tremendous importance in applied science and optoelectronic industry. Controlling of defects introduced during epitaxial growth is a key point in manufacturing devices of high efficiency and durability. In this work, we demonstrate how useful hybrid reflections are on the study of epitaxial structures with anisotropic strain gradients due to patterned substrates. High accuracy to detect and distinguish elastic and plastic relaxations are one of the greatest advantages of measuring this type of reflection, as well as the fact that it can be exploited in symmetrical reflection geometry on a commercial high-resolution diffractometer.

preprint2011arXiv

Structures built by steps of evaporated crystal surface Monte Carlo simulations and experimental data for GaN epi layers

We present Monte Carlo simulation data obtained for the annealed surface GaN(0001) and compare them with the experimental data. High temperature particle evaporation is a part of substrate preparation processes before epitaxy. The ideal surface ordering expected after such heating is a pattern of parallel, equally distanced steps. It appears however, that different types of step structures emerge at high temperatures. We show how the creation of characteristic patterns depends on the temperature and the annealing time. The first pattern is created for a very short evaporation time and consists of rough steps. The second pattern built by curly steps is characteristic for longer evaporation times and lower temperatures. The third pattern, in which steps merge together creating bunches of steps happens for the long enough time. At higher temperatures, bunches of steps bend into the wavy-like structures.