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Md Shamim Hussain

Md Shamim Hussain appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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2 published item(s)

preprint2022arXiv

Global Self-Attention as a Replacement for Graph Convolution

We propose an extension to the transformer neural network architecture for general-purpose graph learning by adding a dedicated pathway for pairwise structural information, called edge channels. The resultant framework - which we call Edge-augmented Graph Transformer (EGT) - can directly accept, process and output structural information of arbitrary form, which is important for effective learning on graph-structured data. Our model exclusively uses global self-attention as an aggregation mechanism rather than static localized convolutional aggregation. This allows for unconstrained long-range dynamic interactions between nodes. Moreover, the edge channels allow the structural information to evolve from layer to layer, and prediction tasks on edges/links can be performed directly from the output embeddings of these channels. We verify the performance of EGT in a wide range of graph-learning experiments on benchmark datasets, in which it outperforms Convolutional/Message-Passing Graph Neural Networks. EGT sets a new state-of-the-art for the quantum-chemical regression task on the OGB-LSC PCQM4Mv2 dataset containing 3.8 million molecular graphs. Our findings indicate that global self-attention based aggregation can serve as a flexible, adaptive and effective replacement of graph convolution for general-purpose graph learning. Therefore, convolutional local neighborhood aggregation is not an essential inductive bias.

preprint2020arXiv

An Improved Physics Based Numerical Model of Tunnel FET Using 2D NEGF Formalism

In this work, we have investigated a 2D model of band-to-band tunneling based on 2-band model and implemented it using 2D NEGF formalism. Being 2D in nature, this model better addresses the variation in the directionality of the tunneling process occurring in most practical TFET device structures. It also works as a compromise between semi-classical and multiband quantum simulation of TFETs. In this work, we have presented a sound step by step mathematical development of the numerical model. We have also discussed how this model can be implemented in simulators and pointed out a few optimizations that can be made to reduce complexity and to save time. Finally, we have performed elaborate simulations for a practical TFET design and compared the results with commercially available TCAD simulations, to point out the limitations of the simplistic models that are frequently used, and how our model overcomes these limitations.