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Md. Shafayat Hossain

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Published work

7 published item(s)

preprint2022arXiv

Magnetization-direction-tunable kagome Weyl line

Kagome magnets provide a fascinating platform for a plethora of topological quantum phenomena. Here, utilizing angle-resolved photoemission spectroscopy, we demonstrate Weyl lines with strong out-of-plane dispersion in an A-A stacked kagome magnet TbxGd1-xMn6Sn6. On the Gd rich side, the Weyl line remains nearly spin-orbit-gapless due to a remarkable cooperative interplay between Kane-Mele spin-orbit-coupling, low site symmetry and in-plane magnetic order. Under Tb substitution, the kagome Weyl line gaps due to a magnetic reorientation to out-of-plane order. Our results illustrate the magnetic moment direction as an efficient tuning knob for realizing distinct three-dimensional topological phases.

preprint2022arXiv

Visualizing the out-of-plane electronic dispersions in an intercalated transition metal dichalcogenide

Layered transition metal dichalcogenides have rich phase diagram and they feature two dimensionality on numerous physical properties. Co1/3NbS2 is one of the newest members of this family where Co atoms are intercalated into the Van der Waals gaps between NbS2 layers. We study the three-dimensional electronic band structure of Co1/3NbS2 using both surface and bulk sensitive angle-resolved photoemission spectroscopy. We show that the electronic bands do not fit into the rigid-band-shift picture after the Co intercalation. Instead, Co1/3NbS2 displays a different orbital character near the Fermi level compared to the pristine NbS2 compound and has a clear band dispersion in kz direction despite its layered structure. Our photoemission study demonstrates the out-of-plane electronic correlations introduced by the Co intercalation, thus offering a new perspective on this compound. Finally, we propose how Fermi level tuning could lead to exotic phases such as spin density wave instability.

preprint2020arXiv

Bloch Ferromagnetism of Composite Fermions

In 1929 Felix Bloch suggested that the paramagnetic Fermi sea of electrons should make a spontaneous transition to a fully-magnetized state at very low densities, because the exchange energy gained by aligning the spins exceeds the enhancement in the kinetic energy. We report here the observation of an abrupt, interaction-driven transition to full magnetization, highly reminiscent of Bloch ferromagnetism that has eluded experiments for the last ninety years. Our platform is the exotic two-dimensional Fermi sea of composite fermions at half-filling of the lowest Landau level. Via quantitative measurements of the Fermi wavevector, which provides a direct measure of the spin polarization, we observe a sudden transition from a partially-spin-polarized to a fully-spin-polarized ground state as we lower the composite fermions' density. Our detailed theoretical calculations provide a semi-quantitative account of this phenomenon.

preprint2020arXiv

Competition between fractional quantum Hall liquid and Wigner solid at small fillings: Role of layer thickness and Landau level mixing

What is the fate of the ground state of a two-dimensional electron system (2DES) at very low Landau level filling factors ($ν$) where interaction reigns supreme? An ordered array of electrons, the so-called Wigner crystal, has long been believed to be the answer. It was in fact the search for the elusive Wigner crystal that led to the discovery of an unexpected, incompressible liquid state, namely the fractional quantum Hall state at $ν=1/3$. Understanding the competition between the liquid and solid ground states has since remained an active field of fundamental research. Here we report experimental data for a new two-dimensional system where the electrons are confined to an AlAs quantum well. The exceptionally high quality of the samples and the large electron effective mass allow us to determine the liquid-solid phase diagram for the two-dimensional electrons in a large range of filling factors near $\simeq 1/3$ and $\simeq 1/5$. The data and their comparison with an available theoretical phase diagram reveal the crucial role of Landau level mixing and finite electron layer thickness in determining the prevailing ground states.

preprint2016arXiv

Morphing of 2D Hole Systems at $ν=3/2$ in Parallel Magnetic Fields: Compressible, Stripe, and Fractional Quantum Hall Phases

A transport study of two-dimensional (2D) holes confined to wide GaAs quantum wells provides a glimpse of a subtle competition between different many-body phases at Landau level filling $ν=3/2$ in tilted magnetic fields. At large tilt angles ($θ$), an anisotropic, stripe (or nematic) phase replaces the isotropic compressible Fermi sea at $ν=3/2$ if the quantum well has a symmetric charge distribution. When the charge distribution is made asymmetric, instead of the stripe phase, an even-denominator fractional quantum state appears at $ν=3/2$ in a range of large $θ$, and reverts back to a compressible state at even higher $θ$. We attribute this remarkable evolution to the significant mixing of the excited and ground-state Landau levels of 2D hole systems in tilted fields.

preprint2016arXiv

Reorientation of the stripe Phase of 2D Electrons by a Minute Density Modulation

Interacting two-dimensional electrons confined in a GaAs quantum well exhibit isotropic transport when the Fermi level resides in the first excited ($N=1$) Landau level. Adding an in-plane magnetic field ($B_{||}$) typically leads to an anisotropic, stripe-like (nematic) phase of electrons with the stripes oriented perpendicular to the $B_{||}$ direction. Our experimental data reveal how a periodic density modulation, induced by a surface strain grating from strips of negative electron-beam resist, competes against the $B_{||}$-induced orientational order of the stripe phase. Even a minute ($<0.25\%$) density modulation is sufficient to reorient the stripes along the direction of the surface grating.

preprint2014arXiv

Self-consistent Capacitance-Voltage Characterization of Gate-all-around Graded Nanowire Transistor

This paper presents a self-consistent numerical model for calculating the charge profile and gate capacitance and therefore obtaining C-V characterization for a gate-all-around graded nanowire MOSFET with a high mobility axially graded In0.75Ga0.25As + In0.53Ga0.47As channel incorporating strain and atomic layer deposited Al2O3/20nm Ti gate. C-V characteristics with introduction and variation of In-composition grading and also grading in doping concentration are explored.Finite element method has been used to solve Poisson's equation and Schrödinger's equation self-consistently considering wave function penetration and other quantum effects to calculate gate capacitance and charge profile for different gate biases. The device parameters are taken from a recently introduced experimental device.