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Researcher profile

Maurizio Mattesini

Maurizio Mattesini contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sciphysics.comp-phcond-mat.mes-hallphysics.atom-phphysics.chem-ph

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Published work

6 published item(s)

preprint2020arXiv

Magnetic anisotropy in Cr$_2$GeC investigated by X-ray magnetic circular dichroism and \textit{ab initio} calculations

The magnetism in the inherently nanolaminated ternary MAX-phase Cr$_{2}$GeC is investigated by element-selective, polarization and temperature-dependent, soft X-ray absorption spectroscopy and X-ray magnetic circular dichroism. The measurements indicate an antiferro-magnetic Cr-Cr coupling along the $c$-axis of the hexagonal structure modulated by a ferromagnetic ordering in the nanolaminated $ab$-basal planes. The weak chromium magnetic moments are an order of magnitude stronger in the nanolaminated planes than along the vertical axis. Theoretically, a small but notable, non-spin-collinear component explains the existence of a non-perfect spin compensation along the $c$-axis. As shown in this work, this spin distortion generates an overall residual spin moment inside the unit cell resembling that of a ferri-magnet. Due to the different competing magnetic interactions, electron correlations and temperature effects both need to be considered to achieve a correct theoretical description of the Cr$_{2}$GeC magnetic properties.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Electronic correlation effects in the Cr2GeC Mn+1AXn phase

The magnetic properties, electronic band structure and Fermi surfaces of the hexagonal Cr2GeC system have been studied by means of both generalized gradient approximation (GGA) and the +U corrected method (GGA+U). The effective U value has been computed within the augmented plane-wave theoretical scheme by following the constrained density functional theory formalism of Anisimov et al. [1991 Phys. Rev. B 45, 7570]. On the basis of our GGA+U calculations, a compensated anti-ferromagnetic spin ordering of Cr atoms has been found to be the ground state solution for this material, where a Ge-mediated super-exchange coupling is responsible for an opposite spin distribution between the ABA stacked in-plane Cr-C networks. Structural properties have also been tested and found to be in good agreement with the available experimental data. Topological analysis of Fermi surfaces have been used to qualitatively address the electronic transport properties of Cr2GeC and found an important asymmetrical carrier-type distribution within the hexagonal crystal lattice. We conclude that an appropriate description of the strongly correlated Cr-d electrons is an essential issue for interpreting the material properties of this unusual Cr-based MAX-phase.

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preprint2012arXiv

The electronic-structure origin of the anisotropic thermopower of nanolaminated Ti3SiC2 determined by polarized x-ray spectroscopy and Seebeck measurements

Nanolaminated materials exhibit characteristic magnetic, mechanical, and thermoelectric properties, with large contemporary scientific and technological interest. Here, we report on the anisotropic Seebeck coefficient in nanolaminated Ti3SiC2 single-crystal thin films and trace the origin to anisotropies in element-specific electronic states. In bulk polycrystalline form, Ti3SiC2 has a virtually zero Seebeck coefficient over a wide temperature range. In contrast, we find that the in-plane (basal ab) Seebeck coefficient of Ti3SiC2, measured on single-crystal films has a substantial and positive value of 4-6 muV/K. Employing a combination of polarized angle-dependent x-ray spectroscopy and density functional theory we directly show electronic structure anisotropy in inherently nanolaminated Ti3SiC2 single-crystal thin films as a model system. The density of Ti 3d and C 2p states at the Fermi level in the basal ab-plane is about 40 % higher than along the c-axis. The Seebeck coefficient is related to electron and hole-like bands close to the Fermi level but in contrast to ground state density functional theory modeling, the electronic structure is also influenced by phonons that need to be taken into account. Positive contribution to the Seebeck coefficient of the element-specific electronic occupations in the basal plane is compensated by 73 % enhanced Si 3d electronic states across the laminate plane that give rise to a negative Seebeck coefficient in that direction. Strong phonon vibration modes with three to four times higher frequency along the c-axis than along the basal ab-plane also influence the electronic population and the measured spectra by the asymmetric average displacements of the Si atoms. These results constitute experimental evidence explaining why the average Seebeck coefficient of Ti3SiC2 in polycrystals is negligible over a wide temperature range.

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preprint2011arXiv

Anisotropy in the electronic structure of V2GeC investigated by soft x-ray emission spectroscopy and first-principles theory

The anisotropy of the electronic structure of ternary nanolaminate V2GeC is investigated by bulk-sensitive soft x-ray emission spectroscopy. The measured polarization-dependent emission spectra of V L2,3, C K, Ge M1 and Ge M2,3 in V2GeC are compared to those from monocarbide VC and pure Ge. The experimental emission spectra are interpreted with calculated spectra using ab initio density-functional theory including dipole transition matrix elements. Different types of covalent chemical bond regions are revealed; V 3d - C 2p bonding at -3.8 eV, Ge 4p - C 2p bonding at -6 eV and Ge 4p - C 2s interaction mediated via the V 3d orbitals at -11 eV below the Fermi level. We find that the anisotropic effects are high for the 4p valence states and the shallow 3d core levels of Ge, while relatively small anisotropy is detected for the V 3d states. The macroscopic properties of the V2GeC nanolaminate result from the chemical bonds with the anisotropic pattern as shown in this work.

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preprint2011arXiv

Electronic structure investigation of the cubic inverse perovskite Sc3AlN

The electronic structure and chemical bonding of the recently discovered inverse perovskite Sc3AlN, in comparison to ScN and Sc metal have been investigated by bulk-sensitive soft x-ray emission spectroscopy. The measured Sc L, N K, Al L1, and Al L2,3 emission spectra are compared with calculated spectra using first principle density-functional theory including dipole transition matrix elements. The main Sc 3d - N 2p and Sc 3d - Al 3p chemical bond regions are identified at -4 eV and -1.4 eV below the Fermi level, respectively. A strongly modified spectral shape of 3s states in the Al L2,3 emission from Sc3AlN in comparison to pure Al metal is found, which reflects the Sc 3d - Al 3p hybridization observed in the Al L1 emission. The differences between the electronic structure of Sc3AlN, ScN, and Sc metal are discussed in relation to the change of the conductivity and elastic properties.

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preprint2011arXiv

The electronic structure of GaN and Ga investigated by soft x-ray spectroscopy and first-principles methods

The electronic structure and chemical bonding of wurtzite-GaN investigated by N 1s soft x-ray absorption spectroscopy and N K, Ga M1, and Ga M2,3 emission spectroscopy is compared to that of pure Ga. The measurements are interpreted by calculated spectra using first-principles density-functional theory (DFT) including dipole transition matrix elements and additional on-site Coulomb interaction (WC-GGA+U). The Ga 4p - N 2p and Ga 4s - N 2p hybridization and chemical bond regions are identified at the top of the valence band between -1.0 and -2.0 and further down between -5.5 and -6.5 eV, respectively. In addition, N 2s - N 2p - Ga 4s and N 2s - N 2p - Ga 3d hybridization regions occur at the bottom of the valence band between -13 and -15 eV, and between -17.0 and -18.0 eV, respectively. A band-like satellite feature is also found around -10 eV in the Ga M1 and Ga M2,3 emission from GaN, but is absent in pure Ga and the calculated ground state spectra. The difference between the identified spectroscopic features of GaN and Ga are discussed in relation to the various hybridization regions calculated within band-structure methods.

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