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Mattias Klintenberg

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Published work

3 published item(s)

preprint2014arXiv

First-principles study of point defects at semicoherent interface

Modeling semicoherent metal-metal interfaces has so far been performed using atomistic simulations based on semiempirical interatomic potentials. We demonstrate through more precise ab-initio calculations that key conclusions drawn from previous studies do not conform with the new results which show that single point defects do not delocalize near the interfacial plane, but remain compact. We give a simple qualitative explanation for the difference in predicted results that can be traced back to shortcomings in potential fitting.

preprint2011arXiv

Carbon release by selective alloying of transition metal carbides

We have performed first principles density functional theory calculations on TiC alloyed on the Ti sublattice with 3d transition metals ranging from Sc to Zn. The theory is accompanied with experimental investigations, both as regards materials synthesis as well as characterization. Our results show that by dissolving a metal with a weak ability to form carbides, the stability of the alloy is lowered and a driving force for the release of carbon from the carbide is created. During thin film growth of a metal carbide this effect will favor the formation of a nanocomposite with carbide grains in a carbon matrix. The choice of alloying elements as well as their concentrations will affect the relative amount of carbon in the carbide and in the carbon matrix. This can be used to design the structure of nanocomposites and their physical and chemical properties. One example of applications is as low-friction coatings. Of the materials studied, we suggest the late 3d transition metals as the most promising elements for this phenomenon, at least when alloying with TiC.

preprint2009arXiv

Evolving properties of two dimensional materials, from graphene to graphite

We have studied theoretically, using density functional theory, several materials properties when going from one C layer in graphene to two and three g raphene layers and on to graphite. The properties we have focused on are the elastic constants, electronic structure (energy bands and density of state s), and the dielectric properties. For any of the properties we have investigated the modification due to an increase in the number of graphene layers is within a few percent. Our results are in agreement with the analysis presented recently by Kopelevich and Esquinazi (unpublished).